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    SIHG25N40D Price and Stock

    Vishay Siliconix SIHG25N40D-E3

    MOSFET N-CH 400V 25A TO247AC
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    DigiKey SIHG25N40D-E3 Tube 255 1
    • 1 $4.65
    • 10 $3.079
    • 100 $4.65
    • 1000 $1.68
    • 10000 $1.6625
    		Buy Now

    Vishay Siliconix SIHG25N40D-GE3

    MOSFET N-CH 400V 25A TO247AC
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    DigiKey SIHG25N40D-GE3 Tube 42 1
    • 1 $4.65
    • 10 $3.079
    • 100 $3.079
    • 1000 $3.079
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    Vishay Intertechnologies SIHG25N40D-GE3

    Mosfet Transistor, N Channel, 25 A, 400 V, 0.14 Ohm, 10 V, 3 V Rohs Compliant: Yes |Vishay SIHG25N40D-GE3
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    Newark SIHG25N40D-GE3 Bulk 1
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    TME SIHG25N40D-GE3 1
    • 1 $3.19
    • 10 $2.78
    • 100 $2.31
    • 1000 $2.21
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    EBV Elektronik SIHG25N40D-GE3 143 Weeks 25
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    Vishay Intertechnologies SIHG25N40DGE3

    Power MOSFET Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
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    ComSIT USA SIHG25N40DGE3 500
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    SIHG25N40D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHG25N40D-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 25A TO-247AC Original PDF
    SIHG25N40D-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 25A TO-247AC Original PDF

    SIHG25N40D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC)


    Original     		SiHG25N40D 2002/95/EC O-247AC 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC)


    Original     		SiHG25N40D 2011/65/EU O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC)


    Original     		SiHG25N40D 2011/65/EU O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    sihg25n40d

    Abstract: No abstract text available
    Text: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC)


    Original     		SiHG25N40D 2002/95/EC O-247AC 11-Mar-11 PDF

    S120625

    Abstract: No abstract text available
    Text: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC)


    Original     		SiHG25N40D 2011/65/EU O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S120625 PDF

    S120625

    Abstract: No abstract text available
    Text: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC)


    Original     		SiHG25N40D 2011/65/EU O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S120625 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC)


    Original     		SiHG25N40D 2011/65/EU O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    IRF740BPBF

    Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology


    Original     		O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF