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Vishay Siliconix SIHP25N40D-E3 MOSFET N-CH 400V 25A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP25N40D-E3	Tube	11		1	1 $4.04 10 $4.04 100 $4.04 1000 $4.04 10000 $4.04	Buy Now
Vishay Siliconix SIHP25N40D-GE3 MOSFET N-CH 400V 25A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP25N40D-GE3	Tube			1	1 $4.04 10 $4.04 100 $4.04 1000 $1.5329 10000 $1.5329	Buy Now
Vishay Siliconix SIHP25N40DGE3 POWER MOSFET Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIHP25N40DGE3		500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHP25N40D-GE3 NCHANNEL 400V (Alt: SIHP25N40D-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	SIHP25N40D-GE3			143 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIHP25N40D Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHP25N40D-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 25A TO-220AB		Original	PDF
SIHP25N40D-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 25A TO-220AB		Original	PDF

SIHP25N40D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHP25N40D O-220AB 2011/65/EU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHP25N40D 2011/65/EU O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHP25N40D O-220AB 2002/95/EC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHP25N40D O-220AB 2011/65/EU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHP25N40D O-220AB 2011/65/EU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHP25N40D O-220AB 2002/95/EC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHP25N40D 2011/65/EU O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHP25N40D 2011/65/EU O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
IRF740BPBF Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology	Original	O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF