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    Vishay Intertechnologies SIR428DP-T1-GE3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SIR428DP-T1-GE3 3,000
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    Quest Components SIR428DP-T1-GE3 23,360
    • 1 $1.35
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    • 100 $1.35
    • 1000 $1.35
    • 10000 $0.405
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    SIR428DP-T1-GE3 2,400
    • 1 $1.62
    • 10 $1.62
    • 100 $1.62
    • 1000 $0.648
    • 10000 $0.567
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    SIR428DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIR428DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A PPAK 8SOIC Original PDF

    SIR428DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1093 SO-8

    Abstract: SIR428DP-T1-GE3 SO8 1093 SiR428DP
    Text: New Product SiR428DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0075 at VGS = 10 V 30g 0.0095 at VGS = 4.5 V 30g VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


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    PDF SiR428DP 2002/95/EC SIR428DP-T1-GE3 18-Jul-08 1093 SO-8 SIR428DP-T1-GE3 SO8 1093

    1117 spice model

    Abstract: SiR428DP sir428
    Text: SPICE Device Model SiR428DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


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    PDF SiR428DP 18-Jul-08 1117 spice model sir428

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR428DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0075 at VGS = 10 V 30g 0.0095 at VGS = 4.5 V 30g VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF SiR428DP 2002/95/EC SIR428DP-T1-GE3 18-Jul-08

    transistor 9529

    Abstract: AN609
    Text: SiR428DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    PDF SiR428DP AN609, 16-Jun-09 transistor 9529 AN609

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477