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    Vishay Siliconix SIR838DP-T1-GE3

    MOSFET N-CH 150V 35A PPAK SO-8
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    SIR838DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR838DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 35A 8-SOIC Original PDF

    SIR838DP Datasheets Context Search

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    AN609

    Abstract: SIR838DP
    Text: SiR838DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR838DP AN609, 11-Nov-09 AN609

    SIR838DP

    Abstract: SiR838DP-T1-GE3
    Text: New Product SiR838DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.033 at VGS = 10 V 35 33 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF SiR838DP 2002/95/EC SiR838DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR838DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.033 at VGS = 10 V 35 33 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF SiR838DP 2002/95/EC SiR838DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR838DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.033 at VGS = 10 V 35 33 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF SiR838DP 2002/95/EC SiR838DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR838DP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 150 0.033 at VGS = 10 V 35 33 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see


    Original     		PDF SiR838DP SiR838DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836