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    Vishay Siliconix SIS430DN-T1-GE3

    MOSFET N-CH 25V 35A PPAK 1212-8
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    DigiKey SIS430DN-T1-GE3 Reel
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    SIS430DN-T1-GE3 Digi-Reel 1
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    SIS430DN-T1-GE3 Cut Tape
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    RS SIS430DN-T1-GE3 Bulk 10
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    Vishay Intertechnologies SIS430DN-T1-GE3

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    Bristol Electronics SIS430DN-T1-GE3 1,899
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    Quest Components SIS430DN-T1-GE3 1,519
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    SIS430DN-T1-GE3 404
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    SIS430DN-T1-GE3 142
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    Vishay BLH SIS430DN-T1-GE3

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    Bristol Electronics SIS430DN-T1-GE3 505 3
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    Vishay Intertechnologies SIS430DNT1GE3

    N-CHANNEL 75-V (D-S) MOSFET Power Field-Effect Transistor, 21.5A I(D), 25V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SIS430DNT1GE3 3,000
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    SIS430DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS430DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 35A PPAK 1212-8 Original PDF

    SIS430DN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiS430DN SiS430DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    sis430dn

    Abstract: No abstract text available
    Text: SPICE Device Model SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SiS430DN 18-Jul-08 PDF

    69053

    Abstract: AN609 43526
    Text: SiS430DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		SiS430DN AN609, 04-Nov-08 69053 AN609 43526 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiS430DN SiS430DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    S-8265

    Abstract: No abstract text available
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiS430DN SiS430DN-T1-GE3 11-Mar-11 S-8265 PDF

    sis430dn

    Abstract: SiS430DN-T1-GE3
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiS430DN SiS430DN-T1-GE3 18-Jul-08 PDF

    SIS430DN

    Abstract: SiS430DN-T1-GE3
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiS430DN SiS430DN-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiS430DN SiS430DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS430DN www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS430DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating


    Original     		VMN-PT0105-1007 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF