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    Vishay Siliconix SIS698DN-T1-GE3

    MOSFET N-CH 100V 6.9A PPAK1212-8
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    DigiKey SIS698DN-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SIS698DN-T1-GE3

    N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIS698DN-T1-GE3)
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    Avnet Americas SIS698DN-T1-GE3 Reel 13 Weeks 3,000
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    Mouser Electronics SIS698DN-T1-GE3 2,990
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    TTI SIS698DN-T1-GE3 Reel 3,000
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    TME SIS698DN-T1-GE3 1
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    EBV Elektronik SIS698DN-T1-GE3 14 Weeks 3,000
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    SIS698DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS698DN-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 6.9A 1212-8 Original PDF

    SIS698DN Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS698DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS698DN 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiS698DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 100 0.195 at VGS = 10 V 6.9 0.230 at VGS = 6 V 6.4 Qg (Typ.) 5.2 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS698DN 2002/95/EC SiS698DN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiS698DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 100 0.195 at VGS = 10 V 6.9 0.230 at VGS = 6 V 6.4 Qg (Typ.) 5.2 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS698DN 2002/95/EC SiS698DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiS698DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 100 0.195 at VGS = 10 V 6.9 0.230 at VGS = 6 V 6.4 Qg (Typ.) 5.2 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS698DN 2002/95/EC SiS698DN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS698DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS698DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS698DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 100 0.195 at VGS = 10 V 6.9 0.230 at VGS = 6 V 6.4 Qg (Typ.) 5.2 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS698DN 2002/95/EC SiS698DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    a 19946

    Abstract: No abstract text available
    Text: SiS698DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiS698DN AN609, 3357m 2777m 0657m 2267m 0874u 1057m 2436m 4315u a 19946

    Untitled

    Abstract: No abstract text available
    Text: SiS698DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 100 0.195 at VGS = 10 V 6.9 0.230 at VGS = 6 V 6.4 Qg (Typ.) 5.2 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS698DN 2002/95/EC SiS698DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836