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    mmic-amplifier

    Abstract: VPS05178 337 BGA
    Text: BGA 312 Silicon Bipolar MMIC-Amplifier 3  Cascadable 50 -gain block 11 dB typical gain at 1.0 GHz 4  9 dBm typical P -1dB at 1.0 GHz  3 dB-bandwidth: DC to 2.0 GHz 2 1 RF IN RF OUT/Bias 1 VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking BGA 312


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    PDF VPS05178 EHA07312 OT-143 Oct-26-1999 mmic-amplifier VPS05178 337 BGA

    SOT143 DUAL DIODE

    Abstract: S11 SCHOTTKY diode BAT15-099 VPS05178
    Text: BAT15-099 Silicon Dual Schottky Diode  DBS mixer applications up to 12 GHz 3  Low noise figure  Low barrier type 4 2 1 4 VPS05178 1 3 2 EHA07011 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099 S5s Pin Configuration


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    PDF BAT15-099 VPS05178 EHA07011 OT143 EHD07083 Jul-31-2001 SOT143 DUAL DIODE S11 SCHOTTKY diode BAT15-099 VPS05178

    VPS05178

    Abstract: Q62702-F1487 marking code g1s
    Text: BF 1012 Silicon N-Channel MOSFET Tetrode 3 • For low noise, high gain controlled input stages up to 1GHz 4 • Operating voltage 12V • Integrated stabilized bias network 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF VPS05178 Q62702-F1487 OT-143 Sep-09-1998 200MHz VPS05178 marking code g1s

    Q62702-G0043

    Abstract: VPS05178
    Text: BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data 3 • Cascadable 50 Ω-gain block • 16 dB typical gain at 1.0 GHz 4 • 12 dBm typical P-1dB at 1.0 GHz • 3 dB-bandwidth: DC to 1.2 GHz 2 1 RF OUT/Bias 1 RF IN VPS05178 3 Circuit Diagram 2, 4 GND


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    PDF VPS05178 EHA07312 Q62702-G0043 OT-143 Sep-04-1998 Q62702-G0043 VPS05178

    marking 93A

    Abstract: TRANSISTOR BI 187
    Text: BFP 93A NPN Silicon RF Transistor 3  For low distortion broadband amplifier and oscillators up to 2GHz at collector currents from 4 5 mA to 30 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 93A


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    PDF VPS05178 OT-143 900MHz Oct-12-1999 marking 93A TRANSISTOR BI 187

    transistor marking 47s

    Abstract: VPS05178 BAS40-07 A1 SOT143
    Text: BAS40-07 Silicon Schottky Diode 3  General-purpose diode for high-speed switching  Circuit protection 4  Voltage clamping  High-level detecting and mixing 2 1 VPS05178 BAS40-07 4 1 3 2 EHA07008 Type Marking BAS40-07 47s Pin Configuration 1=C1 2=C2 3=A2


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    PDF BAS40-07 VPS05178 EHA07008 OT143 EHB00039 EHB00040 EHB00041 Aug-23-2001 transistor marking 47s VPS05178 BAS40-07 A1 SOT143

    A1 SOT143

    Abstract: VPS05178 BAW101 EHA07008
    Text: BAW101 Silicon Switching Diode Array 3  Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage


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    PDF BAW101 VPS05178 EHA07008 OT143 EHN00019 Aug-20-2001 EHB00104 EHB00103 A1 SOT143 VPS05178 BAW101 EHA07008

    MMIC SOT 89 marking CODE

    Abstract: Q62702-G0042 VPS05178 BMS 13-58 Type 1
    Text: BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data 3 • Cascadable 50 Ω-gain block • 11 dB typical gain at 1.0 GHz 4 • 9 dBm typical P -1dB at 1.0 GHz • 3 dB-bandwidth: DC to 2.0 GHz 2 1 RF OUT/Bias 1 RF IN VPS05178 3 Circuit Diagram 2, 4 GND


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    PDF VPS05178 EHA07312 Q62702-G0042 OT-143 Sep-04-1998 MMIC SOT 89 marking CODE Q62702-G0042 VPS05178 BMS 13-58 Type 1

    a3 sot143

    Abstract: BAR60 BAR61 VPS05178 MARKING 61s
    Text: BAR60, BAR61 Silicon PIN Diodes 3  RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3


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    PDF BAR60, BAR61 BAR60 VPS05178 EHA07013 EHA07014 OT143 a3 sot143 BAR60 BAR61 VPS05178 MARKING 61s

    VPS05178

    Abstract: marking BAr EHA07008
    Text: BAR 64-07 Silicon PIN Diode Array 3 • High voltage current controlled RF resistor for RF attenuator and switches 4 • Frequency range above 1 MHz • Low resistance and short carrier lifetime 2 • For frequencies up to 3 GHz 1 4 1 3 2 VPS05178 EHA07008


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    PDF VPS05178 EHA07008 OT-143 Oct-05-1999 100MHz EHD07137 EHD07135 EHD07136 VPS05178 marking BAr EHA07008

    BFP196

    Abstract: VPS05178
    Text: BFP196 NPN Silicon RF Transistor 3  For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2  Power amplifier for DECT and PCN systems  fT = 7.5 GHz 1 VPS05178


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    PDF BFP196 VPS05178 OT143 900MHz Jun-22-2001 BFP196 VPS05178

    BFP181

    Abstract: VPS05178
    Text: BFP181 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


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    PDF BFP181 VPS05178 OT143 Jun-21-2001 BFP181 VPS05178

    BF1005

    Abstract: VPS05178
    Text: BF1005 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF BF1005 VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005 VPS05178

    VPS05178

    Abstract: SCHOTTKY DIODE SOT-143 EHA07008 W3551
    Text: BAT 64-07 Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, 3 bias isolation and clamping applications • Integrated diffused guard ring 4 • Low forward voltage 2 1 4 VPS05178 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF VPS05178 EHA07008 OT-143 50/60Hz, tempe-07 EHB00153 EHB00058 EHB00057 EHB00059 Oct-07-1999 VPS05178 SCHOTTKY DIODE SOT-143 EHA07008 W3551

    Untitled

    Abstract: No abstract text available
    Text: BFP181 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


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    PDF BFP181 VPS05178 OT143

    BCV61

    Abstract: No abstract text available
    Text: BCV61 NPN Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration


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    PDF BCV61 VPS05178 EHA00012 BCV61A BCV61B BCV61C OT143 OT143 BCV61

    Untitled

    Abstract: No abstract text available
    Text: BCV62 PNP Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration


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    PDF BCV62 VPS05178 EHA00013 BCV62A BCV62B BCV62C OT143 OT143

    Untitled

    Abstract: No abstract text available
    Text: BFP182 NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 4  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF BFP182 VPS05178 OT143

    sot143 Marking code 53

    Abstract: No abstract text available
    Text: BF772 NPN Silicon RF Transistor 3  For application in TV-sat tuners 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF772 RAs Pin Configuration 1=C 2=E 3=B Package 4=E SOT143 Maximum Ratings Parameter


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    PDF BF772 VPS05178 OT143 sot143 Marking code 53

    VPS05178

    Abstract: No abstract text available
    Text: BF 1009S Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 9V  Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF 1009S VPS05178 EHA07215 OT-143 May-05-1999 200MHz VPS05178

    VPS05178

    Abstract: ma1022
    Text: BF 2030 Silicon N-Channel MOSFET Tetrode Preliminary data 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF VPS05178 EHA07461 OT-143 Dec-10-1999 VPS05178 ma1022

    Untitled

    Abstract: No abstract text available
    Text: BF 2040 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF VPS05178 EHA07461 OT-143 Feb-14-2001

    Untitled

    Abstract: No abstract text available
    Text: BF 2030 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF VPS05178 EHA07461 OT-143 Feb-09-2001

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F= 1.2dB at 900MHz VPS05178 ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration


    OCR Scan
    PDF BFP182 900MHz 2-F1396 OT-143 2565b fiE35bD5