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    VTB5051J Price and Stock

    Excelitas Technologies Corporation VTB5051JH

    Diode, Photo, 920Nm, 50°, To-5-3; No. Of Pins:3Pins; Diode Case Style:To-5; Wavelength Of Peak Sensitivity:920Nm; Angle Of Half Sensitivity ±:50°; Dark Current:250Pa; Operating Temperature Min:-40°C; Operating Temperature Max:110°C Rohs Compliant: Yes |Excelitas Tech VTB5051JH
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    Newark VTB5051JH Bulk 694 1
    • 1 $14.52
    • 10 $14.52
    • 100 $13.4
    • 1000 $13.4
    • 10000 $13.4
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    VTB5051J Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTB5051J PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB5051J EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB5051J EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB5051J EG&G Vactec VTB Process Photodiodes Scan PDF

    VTB5051J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VTB5051JH

    Abstract: VTB5051
    Text: VTB Process Photodiodes VTB5051JH PACKAGE DIMENSIONS inch mm CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a “flat” window, three lead TO-5 package. Chip is isolated from the case. The third lead allows the case to be


    Original     		PDF VTB5051JH VTB5051JH VTB5051

    VTB5051J

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB5051J PACKAGE DIMENSIONS inch mm CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a “flat” window, three lead TO-5 package. Chip is isolated from the case. The third lead allows the case to be


    Original     		PDF VTB5051J 2850istance VTB5051J

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB5051JH PACKAGE DIMENSIONS inch mm CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a “flat” window, three lead TO-5 package. Chip is isolated from the case. The third lead allows the case to be


    Original     		PDF VTB5051JH

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB5051J PACKAGE DIMENSIONS inch mm CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a “flat” window, three lead TO-5 package. Chip is isolated from the case. The third lead allows the case to be


    Original     		PDF VTB5051J

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTB8440

    Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
    Text: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue


    Original     		PDF VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B

    Untitled

    Abstract: No abstract text available
    Text: VTB5051J VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14A Planar silicon photodiode in a “flat” window, three lead TO-5 package. Chip is isolated from the case. The third lead allows the case to be grounded. These diodes have very high shunt resistance


    OCR Scan     		PDF VTB5051J 3030bm

    VTB5050J

    Abstract: VTB5051J 5051j
    Text: 5bE D 3 D 3 D b O cl 0 0 0 1 0 M 2 VTB Process Photodiodes E G 8> 6 521 VCT VTB5050J, 5051J VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a “flat" win­ dow, three lead TO-5 package. Chip is isolated from the case. The third lead


    OCR Scan     		PDF 3D30b0^ 00010M2 VTB5050J, 5051J CASE14A VTB5050J VTB5051J VTB5050J VTB5051J 5051j

    VTB5051J

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VT B 5 0 5 1J PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14A Planar silicon photodiode in a “flat” window, three le a d T O -5 package. Chip is isolated from the case. Th e third lead allows the case to be grounded. These


    OCR Scan     		PDF VTB5051J in2114 VTB5051J

    VTB5050J

    Abstract: VTB5051J VTB505U 5051J PIR 320 Vactec 25 PIR 148
    Text: BQBQbO'î 0001042 521 « V C T 5bE » VTB Process Photodiodes V T B 5 0 5 0 J , 5 0 51 J E 6 & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a “fla f win­ dow, three lead TO-5 package. Chip is isolated from the case. The third lead


    OCR Scan     		PDF VTB5050J, 5051J CASE14A VTB505U VTB5051J 9x1012 8x1013 VTB5050J VTB5051J VTB505U 5051J PIR 320 Vactec 25 PIR 148