HANBit
Abstract: IN3064 KR Electronics 50-PIN HMF8M16F8V
Text: HANBit HMF8M16F8V-90 FLASH-ROM MODULE 16MByte 8M x 16-Bit – Memory Stack Type Part No. HMF8M16F8V- 90 GENERAL DESCRIPTION The HMF8M16F8V is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in an x16bit configuration. The module consists of eight 2M x 8 FROM mounted on a 100-pin, MMC connector FR4-printed circuit
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HMF8M16F8V-90
16MByte
16-Bit)
HMF8M16F8V-
HMF8M16F8V
x16bit
100-pin,
50-pin
HANBit
IN3064
KR Electronics
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MR27V3266D
Abstract: No abstract text available
Text: 1 Semiconductor Preliminary MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by
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MR27V3266D
MR27V3266D
32Mbit
x16bit
x32bit
66MHz
50MHz
D-41460
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DQ100
Abstract: transistor d514
Text: Rev. 1.0, Apr. 2010 K1C5616BKB 256Mb B-die UtRAM2 Multiplexed Synchronous Burst Uni-Transistor Random Access Memory. 16M x16bit datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K1C5616BKB
256Mb
x16bit)
DQ100
transistor d514
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68PIN
Abstract: max4860
Text: HANBit HMF4M16J4V Flash-ROM Module 8MByte x16bit , 68-pin JLCC type, 3.3V Design Part No. HMF4M16J4V GENERAL DESCRIPTION The HMF4M16J4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in an x16bit configuration. The module consists of four 2M x 8bit FROM mounted on a 68-pin, JLCC connector FR4-printed circuit
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HMF4M16J4V
4Mx16bit)
68-pin
HMF4M16J4V
x16bit
68-pin,
HMF4M16J4V-70
68PIN
max4860
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PDF
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72-PIN
Abstract: HMFN16M16M8G RB3 marking SIMM FLASH MEMORY MODULE 72pin 16bit
Text: HANBit HMFN16M16M8G FLASH-ROM MODULE 32MByte 16M x 16-Bit Part No. HMFN16M16M8G GENERAL DESCRIPTION The HMFN16M16M8G is a high-speed NAND flash read only memory (FROM) module containing 16,777,216 words organized in a x16bit configuration. The module consists of eight 4M x 8 FROM mounted on a 72 -pin, double-sided, FR4printed circuit board.
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HMFN16M16M8G
32MByte
16-Bit)
HMFN16M16M8G
x16bit
50ns-cycle
HMF16M16M8G
72-PIN
RB3 marking
SIMM FLASH MEMORY MODULE 72pin 16bit
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PDF
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MR27V3266D
Abstract: No abstract text available
Text: 1 Semiconductor Preliminary MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by
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MR27V3266D
MR27V3266D
32Mbit
x16bit
x32bit
66MHz
50MHz
D-41460
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PDF
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IT8728F
Abstract: 1155 socket LGA+1155+Socket+PIN+diagram
Text: WADE-8012 Intel CoreTM i5/ i7 Processor based Mini-ITX with dual displays, DDR3 SDRAM, Two COM Ports and Eight USB Ports ITE IT8728F GPIO x16bit Four USB PCIE x16 slot LGA1155 socket Intel® Q67 PCH Four SATA 300 ports Equipped with second generation Intel® CoreTM
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WADE-8012
IT8728F
x16bit
LGA1155
LGA-1155
WADE-8012
BD82Q67
240-pin
1920x1200
IT8728F
1155 socket
LGA+1155+Socket+PIN+diagram
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PDF
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MR27V3266D
Abstract: No abstract text available
Text: 1 Semiconductor MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by
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MR27V3266D
MR27V3266D
32Mbit
x16bit
x32bit
66MHz
50MHz.
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marking RY
Abstract: IN3064
Text: HANBit HMF8M16F8VS FLASH-ROM MODULE 16MByte 8M x 16-Bit , SMM 80Pin Part No. HMF8M16F8VS GENERAL DESCRIPTION The HMF8M16F8VS is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in an x16bit configuration. The module consists of eight 2M x 8 FROM mounted on a 80-pin, MMC connector FR4-printed circuit board.
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HMF8M16F8VS
16MByte
16-Bit)
80Pin
HMF8M16F8VS
x16bit
80-pin,
marking RY
IN3064
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PDF
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MR27V3266D
Abstract: LA5A6
Text: OKI Semiconductor Preliminary MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by
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MR27V3266D
MR27V3266D
32Mbit
x16bit
x32bit
66MHz
50MHz
LA5A6
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PDF
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Untitled
Abstract: No abstract text available
Text: HYM41V331OODTYG 1Mx32, 1Mx16 based, PC133 DESCRIPTION T he H ynix H Y M 4V33100D TY G Series are 1M x16bits Synchronous DRAM M odules. T he m odules are com posed o f tw o 1M x16bits CM O S S ynchronous DR AM s in 400m il 50pin TSOP-H package, on a 132pin glass-epoxy printed circuit board. T w o 0.22uF and one
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HYM41V331OODTYG
1Mx32,
1Mx16
PC133
4V33100D
x16bits
50pin
132pin
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Untitled
Abstract: No abstract text available
Text: KM416V1004BJ CMOS DRAM ELECTR ONICS 1M x16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416V1004BJ
x16Bit
1Mx16
30bSS
40SOJ
7Rb4142
Q030b5t>
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Untitled
Abstract: No abstract text available
Text: HY62UF16404C Series 256K x16bit full CMOS SRAM DESCRIPTION FEATURES T h e H Y 6 2 U F 1 6 4 0 4 C is a high speed, super low pow er and 4M bit full C M O S S R A M organized as 2 5 6 K words by 16bits. T h e H Y 6 2 U F 1 6 4 0 4 C uses high perform ance full C M O S process technology
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HY62UF16404C
x16bit
16bits.
48-ball
16bit
HYUF6404C
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Untitled
Abstract: No abstract text available
Text: HYM72V32M636T6 32Mx64, 16Mx16 based, PC133 DESCRIPTION The H Y M 72V32M 636T6 Series are 32M x64bits Synchronous DRAM M odules. The m odules are com posed o f eight 16M x16bits CM O S S ynchronous DR AM s in 400m il 54pin TS O P-II package, one 2K bit EEPR O M in Bpin TS SO P package on a 168pm glass-epoxy
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HYM72V32M636T6
32Mx64,
16Mx16
PC133
72V32M
636T6
x64bits
x16bits
54pin
168pm
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Untitled
Abstract: No abstract text available
Text: HYM71V16635AT6 16Mx64, 8Mx16 based, PC133 DESCRIPTION The Hynix HYM 71V16635AT6 Series are 16M x64bits Synchronous DRAM M odules. The m odules are com posed o f eight 8M x16bits CM OS Synchronous DRAMs in 400m il 54pin TSOP-II package, one 2K bit EEPROM in 8pin TSSO P package on a 168pin glass-epoxy
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HYM71V16635AT6
16Mx64,
8Mx16
PC133
71V16635AT6
x64bits
x16bits
54pin
168pin
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Untitled
Abstract: No abstract text available
Text: KM M 372F804B S DRAM MODULE KM M 372F 80 4B S EDO M o d e 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists ot eight 4M x16bits & four 4Mx4bits CMOS DRAMs in
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372F804B
4Mx16
KMM372F804B
8Mx72bits
x16bits
400mil
168-pin
372F804BS
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Untitled
Abstract: No abstract text available
Text: GM71C4170A/AL GM71CS4170A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 262,144 WORDS X16BIT CMOS DYNAMIC RAM D escrip tio n F ea tu res The GM71C4170A/AL is the new generation dynamic RAM organized 262,144x16 Bit. GM71C4170A/AL has realized higher density, higher performance and various functions by
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GM71C4170A/AL
GM71CS4170A/AL
X16BIT
GM71C4170A/AL
144x16
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auo 014
Abstract: No abstract text available
Text: GM71C4260A/AL GM71CS4260A/AL GoldStar 262,144 WORDS X16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4260A/AL is th e new generation d y n am ic RAM organized 2 6 2 ,1 4 4 x 1 6 Bit. GM71C4260A/AL has realized higher density,
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GM71C4260A/AL
GM71CS4260A/AL
X16BIT
GM71C4260A/AL
71C4260A/AL
71CS4260A/AL
auo 014
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Untitled
Abstract: No abstract text available
Text: HYM76V4635HGT6 4Mx64, 4Mx16 based, PC133 DESCRIPTION The H ynix H Y M 76V 4635A T6 Series are 4M x64bits Synchronous D R AM M odules. T he m odules are com posed o f fo u r 4M x16bits C M O S S ynchronous DR AM s in 400m il 54pin TS O P-II package, one 2K bit EE PR O M in 8pin TS S O P package on a 168pin glass-epoxy
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HYM76V4635HGT6
4Mx64,
4Mx16
PC133
x64bits
x16bits
54pin
168pin
0022uF
76V4635AT6
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PDF
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Untitled
Abstract: No abstract text available
Text: NN5216165 series CMOS 16Mbit 524,288 words x 16 bits x 2 banks Synchronous Dynam ic RAM Preliminary Specification DESCRIPTION This product is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) organized as 524,288 words x16bits x 2banks. This product features a fully synchronous operation referenced to a positive edge of dock input. The read/write
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NN5216165
16Mbit
x16bits
256words)
50-pin
NN5216165XX
50pin
16Mbits
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cc1c
Abstract: 6655h
Text: HYM71V16655HCT6 16Mx64, 8Mx16 based, PC100 DESCRIPTION The Hynix H Y M 71V16655HC T6 Series are 16M x64bits Synchronous DRAM Modules. T he m odules are com posed o f eight 8M x16bits CM OS Synchronous DRAM s in 400m il 54pin TSOP-II package, one 2K bit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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HYM71V16655HCT6
16Mx64,
8Mx16
PC100
71V16655HC
x64bits
x16bits
54pin
168pin
cc1c
6655h
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X16-BIT
Abstract: 64K SRAM
Text: H Y 6 2U F 1 610 1C S eries 64K x16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101C uses high performance full CMOS process technology and designed for high speed low power circuit
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HY62UF16101C
x16bit
16bit.
HYUF611CC
100ns
X16-BIT
64K SRAM
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ci5 5t
Abstract: No abstract text available
Text: HYM71V16635HCT6 16Mx64, 8Mx16 based, PC133 DESCRIPTION The Hynix H YM 71V16635HC T6 Series are 16M x64bits Synchronous DRAM M odules. The m odules are com posed o f eight 8M x16bits CMOS Synchronous DRAM s in 400m il 54pin TSOP-II package, one 2K bit EEPROM in 8pin TS SO P package on a 168pm glass-epoxy
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HYM71V16635HCT6
16Mx64,
8Mx16
PC133
71V16635HC
x64bits
x16bits
54pin
168pm
ci5 5t
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PDF
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cq60
Abstract: No abstract text available
Text: HYM71V8655AT6 8Mx64, 8Mx16 based, PC100 DESCRIPTION The H ynix HYM 71V8655AT6 Series are 8M x64bits Synchronous DRAM M odules. The m odules are com posed o f four 8M x16bits CM OS Synchronous DRAM s in 400m il 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TS SO P package on a 168pln glass-epoxy
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HYM71V8655AT6
8Mx64,
8Mx16
PC100
71V8655AT6
x64bits
x16bits
54pin
168pln
0022uF
cq60
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PDF
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