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    A06 TO92 Search Results

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    NEC 2SC959

    Abstract: BFR39 2SC309 100n AST44 LOW-POWER SILICON NPN 2SC1008A 2SC2274K 2SC3329-BL 2SC959
    Text: LOW-POWER SILICON NPN Item Number Part Number S 10 15 20 25 30 MPS-A06 PMBTAS6 PMBTAS6 FMMT-A06 FMMTA06 MMBTA06 MMBTA06 MMBTA06 MPSA06 PMBTA06 PMBTA06 5MBTA06 BCS3B BFT29 TP58S8 2N585B BFR39 BFR39 BFR39 2S0666 2N4410 BSX21 AST4410 BC447A BC447A BC4BS BC48S-18


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    PDF MPS-A06 FMMT-A06 FMMTA06 MMBTA06 MPSA06 PMBTA06 5MBTA06 NEC 2SC959 BFR39 2SC309 100n AST44 LOW-POWER SILICON NPN 2SC1008A 2SC2274K 2SC3329-BL 2SC959

    a06 transistor

    Abstract: MPS-A06 MPSA06 transistor MPSA06 MPSa06 equivalent A06 diode marking A06 a06 to92 MPS A06 MPSA06 transistor
    Text: SEMICONDUCTOR MARKING SPECIFICATION MPSA06 TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K MPS A06 801 No. Item Marking 1 KEC K 2 Description KEC CORP. MPS Series Name A06 Device Name Device Name 3 4 98.06.23 Lot No. Revision No : 8 Year 0 ~ 9 : 1900~1999


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    PDF MPSA06 a06 transistor MPS-A06 MPSA06 transistor MPSA06 MPSa06 equivalent A06 diode marking A06 a06 to92 MPS A06 MPSA06 transistor

    A05 SOT

    Abstract: A06 NPN a06 transistor marking A06 A05 sot-23 a06 to92 k 036 A06 diode D 92 M 03 DIODE MMBTA05
    Text: MPSA05/06 / MMBTA05/06 NPN SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Features • • • MMBTA05 / MMBTA06 Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages A C TOP VIEW B C B E G E D H K Mechanical Data


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    PDF MPSA05/06 MMBTA05/06 MMBTA05 MMBTA06 O-92/SOT-23, MIL-STD-202, OT-23 MMBTA06 OT-23 A05 SOT A06 NPN a06 transistor marking A06 A05 sot-23 a06 to92 k 036 A06 diode D 92 M 03 DIODE

    MPS A06 transistor

    Abstract: MPS A06 MPSA06 "cross reference" mps 0724 marking A06 amplifier FAIRCHILD SOT-223 MARK Marking code mps
    Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF MPSA06 MMBTA06 PZTA06 MPSA06 MMBTA06 OT-23 OT-223 MPSA06RA O-92-3 MPS A06 transistor MPS A06 MPSA06 "cross reference" mps 0724 marking A06 amplifier FAIRCHILD SOT-223 MARK Marking code mps

    pn2222a fairchild

    Abstract: MARKING W2 SOT23 TRANSISTOR marking A06 amplifier MARKING CODE A06 a06 transistor
    Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF MPSA06 MMBTA06 PZTA06 MPSA06 MMBTA06 OT-23 OT-223 PZTA06 pn2222a fairchild MARKING W2 SOT23 TRANSISTOR marking A06 amplifier MARKING CODE A06 a06 transistor

    Triac bt 808 600C

    Abstract: w2a smd transistor omron 8567 21EN15T044 awm 2919 pinout cable specification HT 25-19 transistor movement sensor pir cd 208 Ultrasonic Atomizing Transducer Balluff ROTARY ENCODER jhd 16a
    Text: 2361 Technical portal and online community for Design Engineers - www.element-14.com Sensors & Transducers Accelerometers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contrast Scanners . . . . . . . . . . . . . . . . . . . . . . . . . Current Transducers . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 Triac bt 808 600C w2a smd transistor omron 8567 21EN15T044 awm 2919 pinout cable specification HT 25-19 transistor movement sensor pir cd 208 Ultrasonic Atomizing Transducer Balluff ROTARY ENCODER jhd 16a

    MPSA55

    Abstract: A06 NPN mpsa56 mpsa06 MFS-A05 MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPS A06
    Text: MPS-A06 MPS-A56 MPS-A05 MPS-A55 W'ß\ COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE TO-92A THE MPS-A05, MPS-A06, MPS-A55» MPS-A56 ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE MPS-A05,


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    PDF MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPS-A05, MPS-A06, MPS-A55Â MPSA55 A06 NPN mpsa56 mpsa06 MFS-A05 MPS-A05 MPS-A55 MPS A06

    Untitled

    Abstract: No abstract text available
    Text: MPS-A05 MPS-A06 MPS-A55 MPS-A56 COMPLEMENTARY SILICON AP MEDIUM POWER TRANSISTORS * <l t e ± s . i = M = L ? « 1~ " x ” s ~ • CASE TO-92A THE MPS-A05, MPS-A06, MPS-A55» MPS-A56 'ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS


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    PDF MPS-A05 MPS-A06 MPS-A55 MPS-A56 O-92A MPS-A05, MPS-A06, MPS-A55Â

    Untitled

    Abstract: No abstract text available
    Text: Transistors NPN General Purpose Transistor I SSTA06/M MSTA06/M PS A06 # External dimensions Units : mm •F eatures 1 ) B V ceo < 4 0 V (lc = *1 m A ) SSTA06 2 ) Complements the SSTA56/MMSTA56/MPSA56. 0 .9 5 ± g ; f 1 9 ± 0 .2 •P ackage, mark and packaging specifications


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    PDF SSTA06/M MSTA06/M SSTA06 SSTA56/MMSTA56/MPSA56. MMSTA06 MPSA06 O-220FN O-220FN O220FP

    sta06

    Abstract: mark T116
    Text: Transistors I NPN General Purpose Transistor SST A06/MMSTA06/MPSA06 •Features •Externa dimensions Units : mm) Í ) B V c e o < 4 0 V ( I c ^ lm A ) 2 ) Com plem ents the SS T A 56 /M M S T A 5 6/M PS A 56 . SSTA06 •Package, mark and packaging specifications


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    PDF A06/MMSTA06/MPSA06 STA06 PSA06 SSTA06 STA06, SSTA06 MMSTA06 MPSA06 mark T116

    a06 transistor

    Abstract: transistor 468 TRANSISTOR A06 mpsa065 a06 amplifier transistor A55 MPSA55 GE 001755 a56 transistor Transistor B C 468
    Text: G E SOLID STATE Öl ÏVEÏ3Û750Û1 DOIVES Signal Transistors MPS-A05, A06, A55, A56 Silicon Transistors TO-92 The GE/RCA MPS-A 05,06 NPN types and M PS-A 55,56 PNP types are planar epitaxial passivated silicon transistors de­ signed for medium current general purpose amplifier appli­


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    PDF MPS-A05, MPS-A05 MPS-A55 MPS-A06 MPS-A56 IZCS41H1 andMPS-A56. a06 transistor transistor 468 TRANSISTOR A06 mpsa065 a06 amplifier transistor A55 MPSA55 GE 001755 a56 transistor Transistor B C 468

    a06 transistor

    Abstract: TRANSISTOR A06 a06 amplifier mpsa065
    Text: G E SOLI» STATE DI DEÏ3Û75D01 DOIVES Signal Transistors MPS-A05, A06, A55, A56 Silicon Transistors TO-92 T h e G E/R C A M P S -A 0 5 ,0 6 N PN types and M P S -A 5 5 ,56 PNP types are planar epitaxial passivated silicon transistors de­ signed for medium current general purpose amplifier appli­


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    PDF 75D01 MPS-A05, MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPS-A06. andMPS-A56. IICS-43Ht a06 transistor TRANSISTOR A06 a06 amplifier mpsa065

    MPS6530

    Abstract: MPS3702 MPS3703 MPS3704 MPS3705 MPS3706 MPS6512 MPS6514 MPS6516 MPS6517
    Text: SILICON SIGNAL TRANSISTORS COMPLEMENTARY PAIRS TO-92 PACKAGE D E V IC E NPN V CE SAT hFE b v CEO PN P (V) M l N .-M A X . M PSA55 M P S A 56 M PS3702 M PS3703 60 80 60 80 25 30 5050505060-300 30-150 1 0 0m A , 10 0m A , 10 0m A , 1 0 0m A , 50 m A , 50 m A ,


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    PDF 100mA, MPSA55 MPS3702 MPS3704 MPS6530 MPS3703 MPS3704 MPS3705 MPS3706 MPS6512 MPS6514 MPS6516 MPS6517

    mps 06

    Abstract: GES6220 MPS3702 MPS3703 MPS3704 MPS3705 MPS3706 MPS6512 MPS6514 MPS6516
    Text: SILICON SIGNAL TRANSISTORS COMPLEMENTARY PAIRS TO-92 PACKAGE DEVICE NPN V Ml N.-MAX. MPSA55 MPS A 56 MPS3702 MPS3703 60 80 60 80 25 30 30 30 20 30 30 25 25 40 40 40 25 40 40 30 40 40 30 25 25 60 60 80 80 40 40 25 25 MPS A05 MPSA06 MPS3704 MPS3705 MPS3706


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    PDF 100mA, MPSA55 MPS3702 MPS3704 mps 06 GES6220 MPS3703 MPS3704 MPS3705 MPS3706 MPS6512 MPS6514 MPS6516

    D38L1-3

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50


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    PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 D38L1-3 MPSA20

    GES5819

    Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30


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    PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20S6535 100mA) MPSA20 MPSA55

    MPS6566

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50


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    PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20VES MPS6566 MPSA20

    MPS6531

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000


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    PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA206531, MPS6532 MPS6531 MPSA20

    Untitled

    Abstract: No abstract text available
    Text: TELEDYNE COMPONENTS 5ñE D • aW bOH . QOat.4aM O T-29 -25 SD1202 SEMICONDUCTOR_ N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS FETs ORDERING INFORMATION Sorted Chips In Waffle Pack TO-226AA TO-92 Package


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    PDF SD1202 O-226AA SD1202CHP SD1202BD OT-143) tO921

    mps65

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000


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    PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20MPS6516 MPS6517 mps65 MPSA20

    M41J

    Abstract: CDG4469 diagram of ic 7941 digital controlled attenuator 206af
    Text: TELEDYNE COMPONENTS 5f lE D Ô W b D S □□O bBai 1 SEMICONDUCTOR 8-BIT HIGH FREQUENCY DIGITAL CONTROLLED ATTENUATOR FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Input Voltage up to 6.0V„US Attenuation Range of 0 to 127.5dB Precise Attenuation Selectable in 0.5dB steps


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    PDF OT-143) M41J CDG4469 diagram of ic 7941 digital controlled attenuator 206af

    mps 444

    Abstract: ib74 2N4125 2N4126 FTS03392 FTS03393 MPS3392 MPS3393 t144 curve set t144
    Text: &H FAIRCHILD SEM ICO NDUCTOR DE ÍB Mb Tb 74 005737b MPS3392/FTS03392 MPS3393/FTS03393 FAIRCHILD A Schlumberger Company NPN Small Signal General Purpose Amplifiers - — « « • . . . 25 V M in hFE . • • 150-300 (M P S /FT S 03392), 90-180 (M P S /FT S 03393)


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    PDF MPS/FTS03392) MPS/FTS03393) 2N4125, 2N4126 MPS3392 MPS3393 FTS03392 FTS03393 O-236AA/AB O-236AA/AB mps 444 ib74 2N4125 2N4126 FTS03392 FTS03393 MPS3392 MPS3393 t144 curve set t144

    TFK 680 CNY 70

    Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
    Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.


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    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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