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    A11A10 Price and Stock

    Taoglas Antenna Solutions AQHA.11.A.101111

    TORPEDO AQHA.11.A ACTIVE GNSS EX
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    DigiKey AQHA.11.A.101111 Bag 5 1
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    Avnet Americas AQHA.11.A.101111 Bag 13 Weeks, 5 Days 50
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    Newark AQHA.11.A.101111 Bulk 1
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    Richardson RFPD AQHA.11.A.101111 50
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    EBV Elektronik AQHA.11.A.101111 9 Weeks 50
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    Sager AQHA.11.A.101111 50
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    Symmetry Electronics AQHA.11.A.101111 1
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    Amphenol Corporation NTHCAA11A10001F

    NTC Thermistors NTHCAA11A10001F
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    Amphenol Corporation NTHCAA11A10002F

    NTC Thermistors NTHCAA11A10002F
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    Amphenol Corporation NTHCAA11A1001F0

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    YAGEO Corporation RNLBA11A103J

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    Bristol Electronics RNLBA11A103J 3,350
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    Find more A11A10 price and stock on Findchips.com

    A11A10 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    A11A-10-B-G-1 DB Lectro DIP PLUG PITCH 2.0mm Scan PDF
    A11A-10-B-S-1 DB Lectro DIP PLUG PITCH 2.0mm Scan PDF
    A11A10BT1 DB Lectro DIP PLUG PICH 2.0mm Scan PDF

    A11A10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    row decoder

    Abstract: A17a A8 diode diode a3 diode a7 transistor A10 transistor a13 A18 transistor HM62W8512B
    Text: HM62W8512B Series Block Diagram A18 V CC A16 V SS A1 A0 A2 A12 Row Decoder • • • • • Memory Matrix 1,024 x 4,096 • • Column I/O A14 A3 A7 A6 I/O0 Input Data Control Column Decoder I/O7 A13 A17A15 A8 A9 A11A10 A4 A5 •• CS WE OE 4 Timing Pulse Generator


    Original     		PDF HM62W8512B A17A15 A11A10 row decoder A17a A8 diode diode a3 diode a7 transistor A10 transistor a13 A18 transistor

    diode a3

    Abstract: transistor A7 diode a7 diode A9 A2 diode A7 transistor diode a1 diode A4 HM628512BI A16V
    Text: HM628512BI Series Block Diagram A18 V CC A16 V SS A1 A0 A2 A12 Row Decoder • • • • • Memory Matrix 1,024 x 4,096 A14 A3 A7 A6 I/O0 Column I/O • • Input Data Control Column Decoder I/O7 A13 A17A15A8 A9 A11A10 A4 A5 • • CS WE OE 4 Timing Pulse Generator


    Original     		PDF HM628512BI A17A15A8 diode a3 transistor A7 diode a7 diode A9 A2 diode A7 transistor diode a1 diode A4 A16V

    diode a3

    Abstract: HM62W8512BI
    Text: HM62W8512BI Series Block Diagram A18 V CC A16 V SS A1 A0 A2 A12 Row Decoder • • • • • Memory Matrix 1,024 x 4,096 A14 A3 A7 A6 I/O0 Column I/O • • Input Data Control • • Column Decoder I/O7 A13 A17A15A8 A9 A11A10 A4 A5 • • CS WE Timing Pulse Generator


    Original     		PDF HM62W8512BI A17A15A8 diode a3

    transistor a13

    Abstract: A17a diode a3 A18 transistor A8 diode decoder diode a2 diode a7 A7 diode HM62V8512B
    Text: HM62V8512B Series Block Diagram A18 V CC A16 V SS A1 A0 A2 A12 Row Decoder • • • • • Memory Matrix 1,024 x 4,096 • • Column I/O A14 A3 A7 A6 I/O0 Input Data Control Column Decoder I/O7 A13 A17A15 A8 A9 A11A10 A4 A5 •• CS WE OE 4 Timing Pulse Generator


    Original     		PDF HM62V8512B A17A15 A11A10 transistor a13 A17a diode a3 A18 transistor A8 diode decoder diode a2 diode a7 A7 diode

    diode a3

    Abstract: Pulse generator circuit diode a7 transistor A6 A7 transistor pulse generator transistor A10 transistor A16 A2 diode A4 diode
    Text: HM628512A Series Block Diagram A12 V CC A7 V SS A1 A0 A2 A5 Row Decoder • • • • • Memory Matrix 1,024 x 4,096 A6 A3 A4 A18 I/O0 Column I/O • • Input Data Control Column Decoder I/O7 A13 A17A15A8 A9 A11A10A14A16 • • CS WE OE 4 Timing Pulse Generator


    Original     		PDF HM628512A A17A15A8 A14A16 diode a3 Pulse generator circuit diode a7 transistor A6 A7 transistor pulse generator transistor A10 transistor A16 A2 diode A4 diode

    diode a3

    Abstract: A2 diode A4 diode diode a7 a1 diode A12 diode A18 Transistor A7 transistor in a3 transistor A11
    Text: HM628512BFP Series Block Diagram A18 V CC A16 V SS A1 A0 A2 A12 Row Decoder • • • • • Memory Matrix 1,024 x 4,096 A14 A3 A7 A6 I/O0 Column I/O • • Input Data Control • • Column Decoder I/O7 A13 A17A15A8 A9 A11A10 A4 A5 • • CS WE Timing Pulse Generator


    Original     		PDF HM628512BFP A17A15A8 diode a3 A2 diode A4 diode diode a7 a1 diode A12 diode A18 Transistor A7 transistor in a3 transistor A11

    Sony IMX 183

    Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
    Text: i.MX 6Solo/6DualLite Applications Processor Reference Manual Document Number: IMX6SDLRM Rev. 1, 04/2013 i.MX 6Solo/6DualLite Applications Processor Reference Manual, Rev. 1, 04/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1


    Original     		PDF

    A17a

    Abstract: HM62W8512B HM62W8512BLFP-5 HM62W8512BLFP-5SL HM62W8512BLFP-5UL HM62W8512BLFP-7 HM62W8512BLFP-7SL HM62W8512BLFP-7UL HM62W8512BLTT-5
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    sandisk eMMC 4.41

    Abstract: toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc
    Text: An addendum for this document is available. See Document ID#: IMX25RMAD. i.MX25 Multimedia Applications Processor Reference Manual Supports i.MX251 MCIMX251 i.MX253 (MCIMX253) i.MX255 (MCIMX255) i.MX257 (MCIMX257) i.MX258 (MCIMX258) IMX25RM Rev. 1 06/2009


    Original     		PDF IMX25RMAD. MX251 MCIMX251) MX253 MCIMX253) MX255 MCIMX255) MX257 MCIMX257) MX258 sandisk eMMC 4.41 toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc

    100PF

    Abstract: BS616UV1610 BS616UV1610BC BS616UV1610BI BS616UV1610FC BS616UV1610FI
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 „ FEATURES „ DESCRIPTION • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 25mA Max. operating current I-grade : 30mA (Max.) operating current


    Original     		PDF BS616UV1610 100ns x8/x16 BS616UV1610 R0201-BS616UV1610 100PF BS616UV1610BC BS616UV1610BI BS616UV1610FC BS616UV1610FI

    Hitachi DSA002746

    Abstract: No abstract text available
    Text: HM628512B Series 4 M SRAM 512-kword x 8-bit ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology.


    Original     		PDF HM628512B 512-kword ADE-203-903B 525-mil 400-mil 600-mil Hitachi DSA002746

    Hitachi DSA002746

    Abstract: No abstract text available
    Text: HM628512A Series 4 M SRAM 512-kword x 8-bit ADE-203-640B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 µm Hi-CMOS process technology. The


    Original     		PDF HM628512A 512-kword ADE-203-640B 525-mil 400-mil 600-mil Hitachi DSA002746

    Untitled

    Abstract: No abstract text available
    Text: M65KA128AL 128Mbit 4 Banks x 2M x 16 1.8V Supply, Low Power SDRAMs PRELIMINARY DATA Features summary • 128Mbit SYNCHRONOUS DYNAMIC RAM – Organized as 4 Banks of 2 MWords, each 16 bits wide ■ SUPPLY VOLTAGE – VDD = 1.65V to 1.95V – VDDQ = 1.65 to 1.95V for Input/Output


    Original     		PDF M65KA128AL 128Mbit 128Mbit 104MHz

    E1210

    Abstract: JT-G704 JT-G703 JT-G706 MT9072 MT9072AB MT9072AV PUB43801 PCM24 Y230
    Text: MT9072 Octal T1/E1/J1 Framer Data Sheet Features • • • • • • • October 2004 Eight fully independent, T1/E1/J1 framers 3.3 V supply with 5 V tolerant inputs Selectable 2.048 Mbit/s or 8.192 Mbit/s serial buses for both data and signaling Framing Modes:


    Original     		PDF MT9072 IEEE-1149 MT9072AB MT9072AV MT9072 E1210 JT-G704 JT-G703 JT-G706 MT9072AB MT9072AV PUB43801 PCM24 Y230

    1086a

    Abstract: HM62W8512BI HM62W8512BLTTI HM62W8512BLTTI-7 HM62W8512BLTTI-8
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MT9072 Octal T1/E1/J1 Framer Advance Information DS5063 Features • • Eight fully independent, T1/E1/J1 framers 3.3V supply with 5V tolerant inputs • Selectable 2.048 Mbit/s or 8.192 Mbit/s serial buses for both data and signaling • • Framing Modes:


    Original     		PDF MT9072 DS5063 IEEE-1149

    Untitled

    Abstract: No abstract text available
    Text: MT9072 Octal T1/E1/J1 Framer Advance Information Features • • • • • • • DS5063 Eight fully independent, T1/E1/J1 framers 3.3V supply with 5V tolerant inputs Selectable 2.048 Mbit/s or 8.192 Mbit/s serial buses for both data and signaling Framing Modes:


    Original     		PDF MT9072 DS5063 IEEE-1149

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W24010C 128K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24010C is a normal-speed, very low-power CMOS static RAM organized as 131072 × 8 bits that operates on a wide voltage range from 2.7V to 5.5V power supply. This device is manufactured


    Original     		PDF W24010C 32-pin

    Untitled

    Abstract: No abstract text available
    Text: ESMT SDRAM M52S128324A 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y JEDEC standard 2.5V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 1, 2 & 3 - Burst Length ( 1, 2, 4, 8 & full page )


    Original     		PDF M52S128324A M52S128324A-7TG 143MHz M52S128324A-7BG 143Min

    Hitachi DSAUTAZ005

    Abstract: No abstract text available
    Text: HM62W8512BI Series 4 M SRAM 512-kword x 8-bit ADE-203-1086A (Z) Rev. 1.0 Jul. 13, 1999 Description The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62W8512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process


    Original     		PDF HM62W8512BI 512-kword ADE-203-1086A 32-pin out628) Hitachi DSAUTAZ005

    M29DW256G

    Abstract: M29dw256 spansion TSOP56
    Text: M29DW256G 256-Mbit x16, multiple bank, page, dual boot 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) „ Asynchronous random/page read


    Original     		PDF M29DW256G 256-Mbit 32Mbit 96Mbit M29DW256G M29dw256 spansion TSOP56

    Untitled

    Abstract: No abstract text available
    Text: À U ujüP M 1 \ 1 < » H Ili h! î Hc Li V-s 11 ( ; is i h - l i t f S !I ; H i l! i vj Advance information Features •A utom atic an d direct precharge 1 Burst read, single w rite • O rganization: 1 ,0 4 8 ,5 7 6 w ords x 8 bits x 2 banks (2M x8) 3 2 4 ,2 8 8 w ords x 16 bits x 2 banks


    OCR Scan     		PDF 44-pin 50-pin AS4LC2M8S0-12TC AS4LC1M16S0-12TC AS4LC1M16SO-10TC

    Untitled

    Abstract: No abstract text available
    Text: Advance information •■ AS4 LC16M4SO AS4LC8M8S0 AS4LC4M16S0 II 3.3V 2 56 K X 3 2 CM O S synchronous DRAM Features • O rg a n iz a tio n • A u to re fre s h a n d se lf re fre s h - 4 ,1 9 4 ,3 0 4 w o r d s x 4 b its x 4 b a n k s 1 6 M x 4 • A u to m a tic a n d d ire c t p re c h a rg e


    OCR Scan     		PDF LC16M4SO AS4LC4M16S0 54-pin AS4LC16M4S0-8TC AS4LC16M 4S0-10TC AS4LC8M8S0-10TC AS4LC4M16S0-8TC

    Untitled

    Abstract: No abstract text available
    Text: Advance information •■ I l AS4LC2M8S0 AS4LC1M1ÓS0 A 3.3V 2 M x 8 /lM x 16 CMOS synchronous DRAM Features Automatic and direct precharge Burst read, single write Can assert random column address in every cycle LVl'l'L compatible V O 3.3Vpower supply JEDEC standard package, pinout and function


    OCR Scan     		PDF 44-pin 50-pin 44-pin 50-pin AS4LC1M16S0-8TC ASHX2M890-10TC AStLClM1690-10TC AS4LC2M8S0-12TC AS4IC1M16S0-12TC T90PII400