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    A5A 101 Price and Stock

    Alpine Electronics (Asia) Ltd SCTA5A0101

    Circuit Board Hardware - PCB 3A Spring contct SMT 1.4x1.4x1.8mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SCTA5A0101 13,747
    • 1 $0.47
    • 10 $0.336
    • 100 $0.269
    • 1000 $0.237
    • 10000 $0.197
    		Buy Now

    Carling Technologies VA5AA101-4RZ13-000

    Rocker Switches VA5AA101-4RZ13-000
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics VA5AA101-4RZ13-000
    • 1 $19.5
    • 10 $17.09
    • 100 $16.02
    • 1000 $14.65
    • 10000 $14.65
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    Carling Technologies VA5AB101-1KZ13-000

    Rocker Switches VA5AB1011KZ13000
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics VA5AB101-1KZ13-000
    • 1 $20.5
    • 10 $18.61
    • 100 $17.99
    • 1000 $17.9
    • 10000 $17.9
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    Carling Technologies VA5AB101-1RZ00-000

    Switch Actuators VA5AB1011RZ00000
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics VA5AB101-1RZ00-000
    • 1 $17.34
    • 10 $15.23
    • 100 $13.91
    • 1000 $12.83
    • 10000 $12.83
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    Murrelektronik GmbH 7700-A5A01-1610100

    Murrelektronik Mini (7/8) 5 pole, Male (Ext.) 0/Female 0, TPE 5x18AWG ye UL/CSA, ITC/PLTC 1m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 7700-A5A01-1610100
    • 1 $82.86
    • 10 $82.86
    • 100 $82.86
    • 1000 $82.86
    • 10000 $82.86
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    A5A 101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a1f45

    Abstract: 8C414
    Text: 1 Datasheet 9EF 2  2!F7"EFF#  9$%A5A$2 1 1 &F'"  1 1 1


    Original     		PDF C91C918 A196FF B1CE743 8A91D47 348A78C4E1 8C713A98 3817C376C8 68413A98 6D9A19C a1f45 8C414

    A13B

    Abstract: DQ17A-DQ0A A14B DQ4a DQ11A
    Text: July 2004 Preliminary Information AS9C25512M2018L 2.5V 512K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288 x 18 bits


    Original     		PDF AS9C25512M2018L 19-bit A13B DQ17A-DQ0A A14B DQ4a DQ11A

    beaglebone black

    Abstract: KE4CN2H5A-A58 D2516EC4BXGGB NC107 MTFC4GLDEA
    Text: A B C D C B A6A A6 1. Changed R46, R47,R48 to 0 ohms. 2. Changed R45 to 22 Ohms. Change was made due to production failures on some boards due to differences in impedances. A5C 5 4 THERE IS NO WARRANTY FOR THIS DESIGN , TO THE EXTENT PERMITTED BY APPLICABLE LAW. EXCEPT WHEN OTHERWISE STATED


    Original     		PDF

    DQ20A

    Abstract: A17a DQ18A be2a A13B
    Text: July 2004 Preliminary Information AS9C25256M2036L 2.5V 256K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144 x 36 bits


    Original     		PDF AS9C25256M2036L 18Gbps 18-bit DQ20A A17a DQ18A be2a A13B

    A17A

    Abstract: A15A a17b diode A14A A11A A13A A14A AS9C25128M2036L AS9C25256M2036L be0b
    Text: September 2004 Preliminary Information AS9C25256M2036L AS9C25128M2036L 2.5V 256/128K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144/131,072 x 36[1]


    Original     		PDF AS9C25256M2036L AS9C25128M2036L 256/128K 18Gbps A17A A15A a17b diode A14A A11A A13A A14A AS9C25128M2036L AS9C25256M2036L be0b

    A17a

    Abstract: a17b A18B-A0B diode A14A A14A A15A A16A AS9C25256M2018L AS9C25512M2018L DQ17A
    Text: September 2004 Preliminary Information AS9C25512M2018L AS9C25256M2018L 2.5V 512/256K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288/262,144 x 18[1]


    Original     		PDF AS9C25512M2018L AS9C25256M2018L 512/256K A17a a17b A18B-A0B diode A14A A14A A15A A16A AS9C25256M2018L AS9C25512M2018L DQ17A

    55AX1000

    Abstract: FP-1-35-G-10 FP-1-27-G-10 10A3500 10A35 A3600 1-GUSVT-610 A1B ABB 2-GSVT-48-A 2-GUSVT-410
    Text: Variable Area Flowmeter, Glass Tube Models A3500 & A3600 Specification DataFile •■ Removable metering tube – for range changing or cleaning without removing meter from line ■■ External retaining spring and equal area ends on tube – prevents the tube moving under pressure,


    Original     		PDF A3500 A3600 SS/A35/36 55AX1000 FP-1-35-G-10 FP-1-27-G-10 10A3500 10A35 A3600 1-GUSVT-610 A1B ABB 2-GSVT-48-A 2-GUSVT-410

    MCM67B518

    Abstract: MCM72BB32 MCM72BB64 Nippon capacitors
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium The MCM72BB32SG and MCM72BB64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor. The modules are configured as 32K x 72 and 64K x 72 bits in a 160 pin card edge


    Original     		PDF 256KB 512KB MCM72BB32SG MCM72BB64SG 256K/512K MCM67B518 MCM67B618 MCM72BB32 MCM72BB64 MCM72BB64 Nippon capacitors

    MCM67C518

    Abstract: MCM67C618 MCM72CB32 MCM72CB64 Nippon capacitors
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium The MCM72CB32SG and MCM72CB64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor. The modules are configured as 32K x 72 and 64K x 72 bits in a 160 pin card edge


    Original     		PDF 256KB 512KB MCM72CB32SG MCM72CB64SG 256K/512K MCM67C518 MCM67C618 MCM72CB32 MCM72CB64 MCM72CB64 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: Filter connectors Solder pin straight Socket connector Plug connector 00.6 Kat 1 i A5A Kat 1 i A6A A -0 .7 6 B + 0,25 C D - 0,30 9 31,19 16,79 25,00 +00f 3 6,12 33,30 ‘. qjo 15 39,52 25,12 6,12 38,50 47,04 ’ C13 25 53,42 38,84 33,30 *°0f 0 47,04 i 0 ,3


    OCR Scan     		PDF 15-pol. 26-pol. 44-pol.

    cea 141

    Abstract: A5A 103 A5A 101 D4047
    Text: 6 4 -b it C a c h e M o d u le A S 7 M 6 4 P Series Features Logic Block Diagram ♦ Pentium -ready 64-bit data path A 3A -A 6A • ♦ High speed: tAA= 10-20 ns ♦ Low Power - AO-3 A 07 -1 9 • A3B-A6B — » 4 0 -3 A 07-19 — * A4-16 A 4-16 CËÂ •


    OCR Scan     		PDF 64-bit 32/64/128K A4-16 D32-39 256/512/1024KB D08-15 D16-23 cea 141 A5A 103 A5A 101 D4047

    btb 137

    Abstract: No abstract text available
    Text: HI High- Performan ce 256/512/1024 KB vie 3.3V SRAM Module AS7M64f*3256 AS7M64P3512 AS7M64P31024 Low Voltage 256/512/1024 KByte Asynchronous Sit AM Module . PIN ARRANGEMENT FEATURES 80 pin dual-readout DIMM - Same pinout for 256/512/1024KB - Same pinout for burst mode 64B3256


    OCR Scan     		PDF 64-bit AS7M64P3256: AS7M64P3512: AS7M64P31024 AS7M64P31024-15) AS7M64f AS7M64P3512 AS7M64P31024 256/512/1024KB 64B3256 btb 137

    Untitled

    Abstract: No abstract text available
    Text: High-Performance 256/512/1024 KByte SRAM Module : AS7M64Ï*256 AS7M64P5Ï2 AS7M64PI024 WÊ 256/512/1024 KByte Asynchronous SRAM Module I PIN ARRANGEMENT FEATURES 80-pin dual-readout DIMM - Same pinout for 256/512/1024KB - Burst-mode control signals - No motherboard jumpers required


    OCR Scan     		PDF AS7M64Ã AS7M64P5Ã AS7M64PI024 80-pin 256/512/1024KB 64-bit AS7M64P256: AS7M64P512: AS7M64P1024 AS7M64P1024-15)

    nec 2761

    Abstract: l021 IP276
    Text: PRELIMINARY PRODUCT INFORMATION NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE _ , u P D 1 6 4 2 1 SOURCE DRIVER FOR 120-OUTPUT TFT-LCD CAPABLE OF ACCOMMODATING UP TO 8 TONES The /JPD16421 is a source driver for TFT-LCD and can accommodate up to 8 tones.


    OCR Scan     		PDF 120-OUTPUT uPD16421 12-bit PD16421 M27S25 PD16421 b45752S /IPD16421 nec 2761 l021 IP276

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.671A INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHF7110 IRHF811Q MEGA RAD HARD 100 Volt, 0.60ft, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown


    OCR Scan     		PDF IRHF7110 IRHF811Q 1x10s 1x106 H-125 IRHF7110, IRHF8110

    NASA

    Abstract: pdm 5001 til 31a 2N7262 IRHF7230 IRHF8230 H139 circuit at mega 32 H142 H149
    Text: Data Sheet No. PD-9.672A INTERNATIONAL RECTIFIER Z O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHF7S3Q IRHFS230 SN7S68 N-CHANNEL JAN SR 8N7S62 JANSHSN7S6S MEGA RAD HARD 200 Volt, 0.400, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs


    OCR Scan     		PDF JANSR8N7S62 IRHF7230 IRHF8230 H-149 IRHF7230, IRHF8230, 2N7262 H-150 NASA pdm 5001 til 31a H139 circuit at mega 32 H142 H149

    6116 SRAM

    Abstract: IZ48
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The M C M 72B F32S G and M C M 72B F64S G are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache fo r the Pentium m icroprocessor.


    OCR Scan     		PDF 256KB 512KB MCM72BF32 MCM72BF64 72BF32 MCM72BF32SG66 MCM72BF64SG66 MCM72BF32SG60 MCM72BF64SG60 6116 SRAM IZ48

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The MCM72CF32SG and MCM72CF64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor.


    OCR Scan     		PDF 256KB 512KB MCM72CF32SG MCM72CF64SG 256K/512K MCM67C518 MCM67C618 MCM72CF64SG66 72CF32 72CF64

    512Kx1 DRAM

    Abstract: No abstract text available
    Text: HY51V4100B Series «HYUNDAI 4M X 1bit CMOS DRAM DESCRIPTION The HY51V4100B is the new generation and fast dynamic RAM organized 4,194,304x1-bit. The HY51V4100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V4100B 304x1-bit. HY51V4100B Schottk014 27J8S 50flfl 1AC10-10-MAY95 512Kx1 DRAM

    gx 6101 d

    Abstract: CHE 6100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The M C M 72BB32SG and M C M 72BB64SG are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache fo r th e Pentium m icroprocessor. The


    OCR Scan     		PDF 256KB 512KB 72BB32SG 72BB64SG 67B618 MCM72BB32 MCM72BB64 MCM72BB64SG66 72BB32 72BB64 gx 6101 d CHE 6100

    C1B4

    Abstract: cq51 c17f C01A MC68HC11E2 motorola mc 8602 258 c014 motorola cmos C100 microcontroller application 9704 258 c017
    Text: Simple Interface for 68HC11 to MICROWIRE “Chip Security” EEPROMs Application Note 909 •■■■■■■■■■ SEMICONDUCTOR TM BRIEF OVERVIEW OF THE NM93CSxx FEATURES ABSTRACT Fairchild’s NM93 CSxx Family of serial EEPROMs offers sophis­ ticatedprotection against accidentaloverwrites from power surges,


    OCR Scan     		PDF 68HC11 tocontroltheNM93CSxx NM93CSxx C1B4 cq51 c17f C01A MC68HC11E2 motorola mc 8602 258 c014 motorola cmos C100 microcontroller application 9704 258 c017

    Untitled

    Abstract: No abstract text available
    Text: HY514100B Series “H Y U N D A I 4M X 1- b it CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514100B 4L750Ã 000413b 1AC09-10-MA HY514100BJ HY514100BLJ

    Untitled

    Abstract: No abstract text available
    Text: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514100B HY514100B 4b750Ã 000413b 1AC09-10-MAY95 HY514100BJ HY514100BLJ

    ICCA100

    Abstract: 2CB32
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MCM72CB32 MCM72CB64 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ T h e M C M 72C B 32S G and M C M 72C B 64S G are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache for the Pentium m icroprocessor.


    OCR Scan     		PDF MCM72CB32 MCM72CB64 256KB 512KB 618FN 72CB64SG66 MCM72CB32SG66 MCM72CB64SG66 MCM72CB32SG80 MCM72CB64SG80 ICCA100 2CB32