A17a
Abstract: A21A A18A MCP market MB84VY6A4A1 MB84VZ128A 92PIN CE-2Ra internal block diagram of mobile phone A22A
Text: New Products MB84VY6A4A1 2-Bus Type PS-MCP Mounted with 6 Memory Chips MB84VY6A4A1 The world first PS-MCP ＿ Package ＿ Stacked M CP with a 2-bus configuration, ＿ mounted with 4 memory chips for a cellular phone application block and 2 memory chips for a baseband block. MB84VY6A4A1 is configured with 328M bits
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MB84VY6A4A1
MB84VY6A4A1
40REF
80REF
A17a
A21A
A18A
MCP market
MB84VZ128A
92PIN
CE-2Ra
internal block diagram of mobile phone
A22A
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NS064N
Abstract: S29NS128N S29NS256N VDC048 S29NS256
Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Single 1.8 volt read, program and erase (1.70
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S29NSxxxN
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
32-Word
S29NS256/128/64N
NS064N
S29NS128N
S29NS256N
VDC048
S29NS256
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Untitled
Abstract: No abstract text available
Text: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory Data Sheet (Advance Information) Distinctive Characteristics Single 1.8V read, program and erase (1.70V to 1.95V)
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S29NS-N
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
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LDM-1A
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D382G32BG2 L9D3162G32BG2 8-16 Gb, DDR3, 128M - 256M x 32 Dual Channel Integrated Module 8-16 Gb, DDR3, 128M - 256M x 64 Single Channel Integrated Module Benefits %RDUGDUHDVDYLQJVZLWKVXUIDFH Z ZL PRXQWIULHQGO\SLWFK PP
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L9D382G32BG2
L9D3162G32BG2
DDR3-133
DDR3-1333
LDS-L9D3xxxG32BG2
LDS-L9D3xxG32BG2
LDM-1A
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L9D3256M32DBG2
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D3256M32DBG2 L9D3512M32DBG2 16-32 Gb, DDR3, 256-512M x 32 Dual Channel Memory Module Benefits FEATURES DDR3 Integrated Module [iMOD]: x9DD 9DD4 999 x9FHQWHUWHUPLQDWHGSXVKSXOO ,2 x3DFNDJH PP[PP[PP
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L9D3256M32DBG2
L9D3512M32DBG2
256-512M
DDR3-1866
L9D3256M32DBG2x125
DDR3-1600
L9D3256M32DBG2x15
DDR3-1333
L9D3512M32DBG2x125
L9D3256M32DBG2
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transistor c124 esn
Abstract: transistor SA235 S71NS064NA0
Text: S71NS128NA0/S71NS064NA0 Based MCPs Stacked Multi-Chip Product MCP MirrorBit Flash Memory and PSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit), 110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/ Write, Burst Mode Flash Memory with 16 Mb (1M x 16-Bit) PSRAM
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S71NS128NA0/S71NS064NA0
16-bit)
S71NS128
064NA0
transistor c124 esn
transistor SA235
S71NS064NA0
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DQ25A
Abstract: DQ20A DQ18A
Text: SG578288FG8SZUU April 27, 2006 Ordering Information Part Numbers Description Module Speed SG578288FG8SZDG 128Mx78 80 * (1GB), DDR2, 244-pin Mini-DIMM,Unbuffered, ECC, 2-Channel (128Mx39 (40), 512MB per Channel), 64Mx8 Based, DDR2-533-444, 36.83mm, 3Ω DQ termination, Green
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SG578288FG8SZUU
SG578288FG8SZDG
128Mx78
244-pin
128Mx39
512MB
64Mx8
DDR2-533-444,
PC2-4200
SG578288FG8SZIL
DQ25A
DQ20A
DQ18A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D3256M32DBG2 L9D3512M32DBG2 16-32 Gb, DDR3, 256-512M x 32 Dual Channel Memory Module Benefits FEATURES DDR3 Integrated Module [iMOD]: "‚"XDD?XDDS?3057X"/202897X1-203X ‚"3057X"egpvgt/vgtokpcvgf."rwuj1rwnn" K1Q " ‚"Rcemcig<"38oo"z"44oo"z"304oo."
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L9D3256M32DBG2
L9D3512M32DBG2
256-512M
3057X
/202897X1-203X
304oo.
493dcnnu
3022oo
LDS-L9D3xxxM32DBG2
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bjw marking code
Abstract: S29NS128N S29NS256N S29NS-N VDC048 VDE044 spansion am29f part marking
Text: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory S29NS-N MirrorBit™ Flash Family Cover Sheet Data Sheet (Advance Information)
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S29NS-N
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
bjw marking code
S29NS128N
S29NS256N
VDC048
VDE044
spansion am29f part marking
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S29NS128N
Abstract: S29NS256N S29NS-N VDC048 VDE044 bjw marking code
Text: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory S29NS-N MirrorBit™ Flash Family Cover Sheet Data Sheet (Advance Information)
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S29NS-N
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
S29NS128N
S29NS256N
VDC048
VDE044
bjw marking code
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Untitled
Abstract: No abstract text available
Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory ADVANCE Distinctive Characteristics Single 1.8 volt read, program and erase (1.70
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S29NSxxxN
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
32-Word
150ided
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Untitled
Abstract: No abstract text available
Text: S71NS128NA0/S71NS064NA0 Based MCPs Stacked Multi-Chip Product MCP MirrorBit Flash Memory and pSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit), 110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/ Write, Burst Mode Flash Memory with 16 Mb (1M x 16-Bit) pSRAM
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S71NS128NA0/S71NS064NA0
16-bit)
S71NS128
064NA0
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A17A
Abstract: A15A a17b diode A14A A11A A13A A14A AS9C25128M2036L AS9C25256M2036L be0b
Text: September 2004 Preliminary Information AS9C25256M2036L AS9C25128M2036L 2.5V 256/128K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144/131,072 x 36[1]
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AS9C25256M2036L
AS9C25128M2036L
256/128K
18Gbps
A17A
A15A
a17b
diode A14A
A11A
A13A
A14A
AS9C25128M2036L
AS9C25256M2036L
be0b
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A17a
Abstract: a17b A18B-A0B diode A14A A14A A15A A16A AS9C25256M2018L AS9C25512M2018L DQ17A
Text: September 2004 Preliminary Information AS9C25512M2018L AS9C25256M2018L 2.5V 512/256K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288/262,144 x 18[1]
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AS9C25512M2018L
AS9C25256M2018L
512/256K
A17a
a17b
A18B-A0B
diode A14A
A14A
A15A
A16A
AS9C25256M2018L
AS9C25512M2018L
DQ17A
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A13B
Abstract: DQ17A-DQ0A A14B DQ4a DQ11A
Text: July 2004 Preliminary Information AS9C25512M2018L 2.5V 512K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288 x 18 bits
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AS9C25512M2018L
19-bit
A13B
DQ17A-DQ0A
A14B
DQ4a
DQ11A
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DQ20A
Abstract: A17a DQ18A be2a A13B
Text: July 2004 Preliminary Information AS9C25256M2036L 2.5V 256K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144 x 36 bits
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AS9C25256M2036L
18Gbps
18-bit
DQ20A
A17a
DQ18A
be2a
A13B
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jk 13001 TRANSISTOR
Abstract: jk 13001 13001 S 6D TRANSISTOR jk 13001 h signo 723 operation manual jk 13001 E bd4 lsi logic 0 281 020 099 SIS transistors 13001 s bd 13001 S 6D TRANSISTOR circuit
Text: LSI LOGIC LCA500K Prelim inary D esig n M anual June 1995 S304 A0 4 O O n s t M h3? This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.
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LCA500K
043/G
LCA500K
jk 13001 TRANSISTOR
jk 13001
13001 S 6D TRANSISTOR
jk 13001 h
signo 723 operation manual
jk 13001 E
bd4 lsi logic
0 281 020 099 SIS
transistors 13001 s bd
13001 S 6D TRANSISTOR circuit
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