Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD 96937 IRIS-A6359 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
|
Original
|
IRIS-A6359
A6359
|
PDF
|
a6351
Abstract: smps circuit of ic a6351 IRIS-A6351 "a6351" hybrid ic pwm circuit diagram smps with mosfet smps control ic with 7 pin TOP smps control ic with 4 pin TOP A6351 pin voltage 6 PIN smps control ic
Text: Data Sheet No. PD 96936A IRIS-A6351 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control IC with adopting On-ChipTrimming technology. Package Outline • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
|
Original
|
6936A
IRIS-A6351
A6351
a6351
smps circuit of ic a6351
IRIS-A6351
"a6351"
hybrid ic pwm
circuit diagram smps with mosfet
smps control ic with 7 pin TOP
smps control ic with 4 pin TOP
A6351 pin voltage
6 PIN smps control ic
|
PDF
|
A6359
Abstract: IRIS-A6359 smps control ic 16 pin smps control ic with 7 pin TOP 6 pin smps power control top mosfet
Text: Data Sheet No. PD 96937A IRIS-A6359 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control IC with adopting On-ChipTrimming technology. Package Outline • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
|
Original
|
6937A
IRIS-A6359
A6359
A6359
IRIS-A6359
smps control ic 16 pin
smps control ic with 7 pin TOP
6 pin smps power control top mosfet
|
PDF
|
a6351
Abstract: smps circuit of ic a6351 A6351 pin voltage IRIS-A6351
Text: Data Sheet No. PD 96936 IRIS-A6351 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
|
Original
|
IRIS-A6351
A6351
a6351
smps circuit of ic a6351
A6351 pin voltage
IRIS-A6351
|
PDF
|
GCOY6101
Abstract: topled 2ma
Text: InGaAlP-High Brightness-Lumineszenzdiode 570 nm, Low Current InGaAlP High Brightness Light Emitting Diode (570 nm, Low Current) F 0283C Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Chipgröße 170 x 170 µm • Wellenlänge: 570 nm • Technologie:InGaAIP
|
Original
|
0283C
GCOY6101
topled 2ma
|
PDF
|
SSD1353
Abstract: SSD1353U4 ROW130 Solomon Systech ssd1353 SA 9259 SB148 SB145 SSD1353U4R1 SB143 SC141
Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1353 Advance Information 160RGB x 132 Dot Matrix OLED/PLED Segment/Common Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change
|
Original
|
SSD1353
160RGB
SSD1353
SSD1353U4
ROW130
Solomon Systech ssd1353
SA 9259
SB148
SB145
SSD1353U4R1
SB143
SC141
|
PDF
|
mb90488b
Abstract: D412 transistor equivalent BB609
Text: FUJITSU MICROELECTRONICS CONTROLLER MANUAL CM44-10121-7E F2MC-16LX 16-BIT MICROCONTROLLER MB90480/485 Series HARDWARE MANUAL F2MC-16LX 16-BIT MICROCONTROLLER MB90480/485 Series HARDWARE MANUAL The information for microcontroller supports is shown in the following homepage.
|
Original
|
CM44-10121-7E
F2MC-16LX
16-BIT
MB90480/485
F2MC-16LX
mb90488b
D412 transistor equivalent
BB609
|
PDF
|
virtual surround dsp mcu
Abstract: thyristor BT 138 Fujitsu MB91F463N thyristor BT 605 MB91F463NB GP143
Text: FUJITSU MICROELECTRONICS CONTROLLER MANUAL CM71-10149-2E FR60 32-BIT MICROCONTROLLER MB91460N Series HARDWARE MANUAL FR60 32-BIT MICROCONTROLLER MB91460N Series HARDWARE MANUAL For the information for microcontroller supports, see the following web site. This web site includes the "Customer Design Review Supplement" which provides the latest cautions on
|
Original
|
CM71-10149-2E
32-BIT
MB91460N
CM44-10149-1E
bit31-24]
bit31-0]
virtual surround dsp mcu
thyristor BT 138
Fujitsu MB91F463N
thyristor BT 605
MB91F463NB
GP143
|
PDF
|
A4506
Abstract: C1406 C1905 C1156 B6106 B323 B32321 B32323 A6306
Text: AC Film Capacitors Motor Run B 32 321 / .23 UL Series – Construction Only UL 810 Construction Dielectric: polypropylene film Plastic case Polyurethane resin Features Self-healing properties Low dissipation factor High insulation resistance Typical applications
|
Original
|
B32321:
B32323:
UL810
A4506
C1406
C1905
C1156
B6106
B323
B32321
B32323
A6306
|
PDF
|
SSD1353
Abstract: GS33 25KHZ GS63 SA159 SC159 STMPE1208S oled ic a636 BL160128
Text: SPECIFICATIONS FOR LCD MODULE MODEL NO. BL160128BCRNHp$ VER01 OR MESSRS: _ ON DATE OF: _ APPROVED BY: _ BOLYMIN, INC.
|
Original
|
BL160128BCRNHp$
VER01
13F-1,
240hrs
120hrs
/30min;
SSD1353
GS33
25KHZ
GS63
SA159
SC159
STMPE1208S
oled ic
a636
BL160128
|
PDF
|
Q-67220-C1447
Abstract: No abstract text available
Text: InGaAlP-High Brightness-Lumineszenzdiode 617nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (617 nm, High Optical Power) F 2000A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch Oberflächenstrukturierung und Stromverteilung
|
Original
|
617nm,
Q-67220-C1447
|
PDF
|
F1048A
Abstract: F1048B
Text: GaAlAs-Infrarot-Lumineszenzdiode 880 nm GaAlAs Infrared Emitting Diode (880 nm) F 1048A F 1048B Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 25 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 400 x 400 µm2
|
Original
|
1048B
F1048A
F1048B
|
PDF
|
GCOY6101
Abstract: osram topled
Text: InGaAlP-High Brightness-Lumineszenzdiode 590 nm, Low Current InGaAlP High Brightness Light Emitting Diode (590 nm, Low Current) F 0347C Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Chipgröße 170 x 170 µm • Wellenlänge: 590 nm • Technologie:InGaAIP
|
Original
|
0347C
GCOY6101
osram topled
|
PDF
|
Q-67220-C1447
Abstract: c1447
Text: InGaAlP-High Brightness-Lumineszenzdiode 617nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (617 nm, High Optical Power) F 2000A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch Oberflächenstrukturierung und Stromverteilung
|
Original
|
617nm,
Q-67220-C1447
c1447
|
PDF
|
|
|
C1446
Abstract: osram topled DIODE 630
Text: InGaAlP-High Brightness-Lumineszenzdiode 630 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (630 nm, High Optical Power) F 1998A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch
|
Original
|
|
PDF
|
GMOY6078
Abstract: Q65110A0136
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, Enhanced Power GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 24 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2
|
Original
|
0118G
GMOY6078
Q65110A0136
|
PDF
|
osram power topled
Abstract: GMOY6088
Text: InGaAlP-High Brightness-Lumineszenzdiode 605 nm, Enhanced Power InGaAlP High Brightness Light Emitting Diode (605 nm, Enhanced Power) F 0281E Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 605 nm
|
Original
|
0281E
osram power topled
GMOY6088
|
PDF
|
opto 101
Abstract: No abstract text available
Text: InGaAlP-High Brightness-Lumineszenzdiode 590 nm, Enhanced Power InGaAlP High Brightness Light Emitting Diode (590 nm, Enhanced Power) F 0282E Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 590 nm
|
Original
|
0282E
opto 101
|
PDF
|
0292E
Abstract: No abstract text available
Text: InGaAlP-High Brightness-Lumineszenzdiode 560 nm, Enhanced Power InGaAlP High Brightness Light Emitting Diode (560 nm, Enhanced Power) F 0292E Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 560 nm
|
Original
|
0292E
0292E
|
PDF
|
GMOY6178
Abstract: No abstract text available
Text: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 12 mil) F 0594A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2
|
Original
|
|
PDF
|
DIODE 630
Abstract: GCOY6101
Text: InGaAlP-High Brightness-Lumineszenzdiode 630 nm, Low Current InGaAlP High Brightness Light Emitting Diode (630 nm, Low Current) F 0349C Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Chipgröße 170 x 170 µm • Wellenlänge: 630 nm • Technologie:InGaAIP
|
Original
|
0349C
DIODE 630
GCOY6101
|
PDF
|
FBRI 10-5 N
Abstract: No abstract text available
Text: Extract from the online catalog ZVIOK 1,5 Order No.: 3006506 Feed-through modular terminal block, Cross section: 0.14 mm² - 2.5 mm², AWG: 26 - 12, Connection type: Spring-cage connection,
|
Original
|
CL-2005)
FBRI 10-5 N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Board to Board Connectors FH Free Height 0.6mm Pitch Board to Board GIGA Connectors SMT Typed 4H Type Plug Assembly GIGA Type With Grounding Plate Acceptable Board Stacking Height=4mm/12mm Material and Finish : Housing — UL94V-0 rated heat resistant resin, natural
|
OCR Scan
|
4mm/12mm
UL94V-0
A5-353190-5
s16077-1
A1-316560-1
|
PDF
|
A635
Abstract: No abstract text available
Text: unm TECHNOLOGY LM 185- 1.2/LM385-1.2 Micropower Voltage Reference F€ATUR€S DCSCRIPTIOH • ■ ■ ■ The LM 18 5-1.2 is a two terminal band gap reference diode that has been designed for applications which require precision performance with micropower oper
|
OCR Scan
|
2/LM385-1
10/tA-
A635
|
PDF
|
