AB-162 TRANSISTOR Search Results

AB-162 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

AB-162 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DICLAD522T Abstract: NEL2001 NEL2004 NEL2012 NEL2035 NEL2035F03-24 V06C ZO 189 transistor Text: DATA SHEET SILICON POWER TRANSISTOR NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier OUTLINE DIMENSIONS Unit: mm 2.8 ±0.2 NEL2035F03-24 of NPN epitaxial microwave power transistors 2 It incorporates emitter ballast resistors, gold metallizations and	Original	NEL2035F03-24 NEL2035F03-24 DICLAD522T NEL2001 NEL2004 NEL2012 NEL2035 V06C ZO 189 transistor	PDF
j608 Abstract: 10R1 MRF6522-10R1 Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the	Original	MRF6522 MRF6522-10R1 j608 10R1 MRF6522-10R1	PDF
MRF6522-10 Abstract: MRF6522-10R1 10R1 Ni200 mosfet 4496 Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the	Original	MRF6522 MRF6522-10R1 MRF6522-10 MRF6522-10R1 10R1 Ni200 mosfet 4496	PDF
j608 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the	Original	MRF6522 j608	PDF
Untitled Abstract: No abstract text available Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the	Original	MRF6522â MRF6522-10R1	PDF
class d amp ic Abstract: MRF1000MA MRF1000MB 2N3906 20 A class b power transistors current gain S22 Package equivalent 1090 Z1-Z10 Text: Order this document by MRF1000MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1000MB Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.	Original	MRF1000MB/D MRF1000MB MRF1000MA/D class d amp ic MRF1000MA MRF1000MB 2N3906 20 A class b power transistors current gain S22 Package equivalent 1090 Z1-Z10	PDF
905-170 Abstract: MRF3010 VK200 VK20019-4B Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,	Original	MRF3010/D MRF3010 905-170 MRF3010 VK200 VK20019-4B	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,	Original	MRF3010/D MRF3010 MRF3010 MRF3010/D	PDF
Ericsson 20082 Abstract: 20082 PTB 20082 Text: e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion	Original	1-877-GOLDMOS 1301-PTB Ericsson 20082 20082 PTB 20082	PDF
Ericsson 20082 Abstract: No abstract text available Text: e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion	Original	1-877-GOLDMOS 1301-PTB Ericsson 20082	PDF
class d amp ic Abstract: 2N3906 MOTOROLA MRF1000 MRF1000MB 2N3906 J500 Text: MOTOROLA Order this document by MRF1000MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1000MB Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.	Original	MRF1000MB/D MRF1000MB class d amp ic 2N3906 MOTOROLA MRF1000 MRF1000MB 2N3906 J500	PDF
Q11K1 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1000MB/D SEMICONDUCTOR TECHNICAL DATA Microwave Pulse Power Transistors MRF1000MB Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.	Original	MRF1000MB/D MRF1000MB MRF1000MB MRF1000MB/D Q11K1	PDF
sy 164 Abstract: sy 166 sy 160 OC870 sy-162 sy162 sy 103 OC824 SY164 OC872 Text: UMSCHLÜSSELLUNGSLISTE DDR-TRANSISTOREN und -DIODEN gültig ab 01.01.1964 nach TGL 19 442 NEUER TYP ALTER TYP NEUER BASTELTYP ALTER BASTELTYP GC 100 GC 101 OC 870 F≤ 25 dB OC 870 F≤ 10 dB LC 810 LC 810 LA 25 LA 25 GC 115 GC 116 GC 117 GC 118 GC 121 GC 122	Original		PDF
j718 Abstract: VK200/10-3B Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,	OCR Scan	MRF3010 DL110/D) MRF3010 VK200 j718 VK200/10-3B	PDF

Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Pulse Pow er Transistors Designed for Class A and AB common emitter amplifier applications in the low-power stages of IFF, DME, TACAN, radar transmitters, and CW systems. • Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A	OCR Scan	IS21I MRF1000MB	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Pulse Pow er Transistors M RF1000M B Designed for Class A and AB common emitter amplifier applications in the low-power stages of IFF, DME, TACAN, radar transmitters, and CW systems. • Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A	OCR Scan	RF1000M IS11I IS12I MRF1000MB	PDF
RF power transistors with s-parameters Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF1000MA MRF1000MB The RF Line M icrowave Pulse Power Transistors . . . designed for Class A and AB common emitter amplifier applications in the low-power stages of IFF, DME, TACAN, radar transmitters, and CW systems.	OCR Scan	MRF1000MA MRF1000MB RF1000M RF power transistors with s-parameters	PDF
2N2708 Abstract: Ferranti ZT84 ferranti 2N2907a 2N3571 2N3571 NPN BFY90 T018 ZT189 ZT211 ZT86 Text: NPN LOW NOISE TABLE 5 NPN SILICON PLANAR LOW NOISETRANSISTORS The transistors shown in this table are characterised for lo w noise, low level am plification and are particularly suitable for audio pre-am plifiers as well as universal applications. The devices are listed in order of decreasing Breakdown Voltage V c e o / decreasing Collector	OCR Scan	2N3571 2N3572 2N2102 2N4036 2N2708 Ferranti ZT84 ferranti 2N2907a 2N3571 NPN BFY90 T018 ZT189 ZT211 ZT86	PDF
Ericsson 20082 Abstract: No abstract text available Text: ERICSSON ^ PTB 20082 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion	OCR Scan	Collector-91 Ericsson 20082	PDF
2N1893 Abstract: 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92 Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,	OCR Scan	2N3571 2N3572 2N2102 2N4036 2N1893 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92	PDF
Untitled Abstract: No abstract text available Text: 12E D I b3b?2S4 OOfiflETM b \| T MOTOROLA MOTOROLA SC SEMICONDUCTOR XSTRS/R - 3 3 '2 .7 F TECHNICAL DATA T P A 0102-130 The RF Line V H F P o w e r T ra n sis to r . . . designed prim arily fo r w ideband, large-signal output and driver am plifier stages in	OCR Scan		PDF
transistor cq 415 Abstract: No abstract text available Text: ERICSSON ^ PTB 20239 12 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description The PTB 20239 is a class AB, NPNI, com m on em itter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz Rated at 12 watts minimum output power, it m ay be used for both CW	OCR Scan		PDF
C735 Abstract: C749 NPN C460 C644 BS9300 c495 C-725 CV7580 c496 c727 Text: 7 BS9000 Converted CV Case Outlines Small Signal Transistors . B S Type Number Com m ercial Equivalent Case Outline Polarity Ab solute Maximum Rating VCB V VCE V h F E at Co llecto r Current VEB V hFE min. hFE max. 1C mA M in. fT MHz Com m ents 0-76 0 -4 8 0	OCR Scan	BS9000 8S9300 BS9300 2N2221A' 2N2222A* 2N1893 2N1613 C735 C749 NPN C460 C644 c495 C-725 CV7580 c496 c727	PDF
sy 160 Abstract: Scans-048 OC871 gf 122 DSAGER00037 GC101 OC870 OC883 LF 833 Text: UMSCHLÜSSELLUNGSLISTE DDR-TRANSISTOREN und -DIODEN gültig ab 01.01.1964 nach TGL 19 442 NEUER ALTER NEUER TYP_ TYP_ BASTELTYP ALTER BASTELTYP GC 100 GC 101 OC 870 F< 25 dB OC 870 F< 10 dB LC 810 LC 810 LA 25 LA 25 GC GC GC GC GC GC	OCR Scan		PDF

AB-162 TRANSISTOR Search Results

AB-162 TRANSISTOR Result Highlights (5)

AB-162 TRANSISTOR Datasheets Context Search

DICLAD522T

j608

MRF6522-10

j608

Untitled

class d amp ic

905-170

Untitled

Ericsson 20082

Ericsson 20082

class d amp ic

Q11K1

sy 164

j718

Untitled

Untitled

RF power transistors with s-parameters

2N2708

Ericsson 20082

2N1893

Untitled

transistor cq 415

C735

sy 160