ACPR400 Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
LPC2148 i2c Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.	Original	PDF	OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
transistor 1892 Abstract: ACPR400 ACPR600 BLC6G20-75 BLC6G20LS-75 Text: BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance	Original	PDF	BLC6G20-75; BLC6G20LS-75 ACPR400 ACPR600 BLC6G20-75 6G20LS-75 transistor 1892 BLC6G20LS-75
TRANSISTOR CW 7808 Abstract: cw 7808 7808 cw SOT502A 7808 voltage regulator ACPR400 BLF1049 transistor 7808 Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D379 BLF1049 Base station LDMOS transistor Product specification Supersedes data of 2001 Dec 05 2003 May 14 Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 FEATURES DESCRIPTION	Original	PDF	M3D379 BLF1049 OT502A ACPR400 SCA75 613524/03/pp12 TRANSISTOR CW 7808 cw 7808 7808 cw SOT502A 7808 voltage regulator ACPR400 BLF1049 transistor 7808
BLF7G20L-90P Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70 Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF7G20L-90P; BLF7G20LS-90P ACPR400k ACPR600k BLF7G20L-90P 7G20LS-90P 1800 ldmos BLF7G20LS-90P RF35 PLW70
BLF7G20LS-140P Abstract: 850 SMD Rework Station RF35 Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF7G20LS-140P ACPR400k ACPR600k BLF7G20LS-140P 850 SMD Rework Station RF35
philips Electrolytic Capacitor Abstract: blf4g20-110b ACPR400 ACPR600 BLF4G20S-110B RF35 Philips Electrolytic Text: BLF4G20-110B; BLF4G20S-110B UHF power LDMOS transistor Rev. 01 — 23 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance	Original	PDF	BLF4G20-110B; BLF4G20S-110B ACPR400 ACPR600 ACPR400 ACPR600 philips Electrolytic Capacitor blf4g20-110b BLF4G20S-110B RF35 Philips Electrolytic
SmD TRANSISTOR a75 Abstract: No abstract text available Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF7G20LS-140P ACPR400k ACPR600k SmD TRANSISTOR a75
h2lb Abstract: ACPR400 DCS1800 EGSM900 GSM1800 GSM1900 PCS1900 STW3100 Text: STW3100 TRANSCEIVER MODULE REV. 1.0 - PRODUCT PREVIEW 1 • ■ ■ ■ FEATURES Triple-band EGSM900 / DCS1800 / PCS1900 . Supports data transfer applications in multislots GPRS class-12 EDGE Receive capability Integrates: – BiCMOS6G RF transceiver – 3 Receive Band Pass filters	Original	PDF	STW3100 EGSM900 DCS1800 PCS1900) class-12 LFBGA104 STW3102 h2lb ACPR400 GSM1800 GSM1900 PCS1900 STW3100
m 110b1 Abstract: ACPR400 ACPR600 BLF4G20LS-110B RF35 PHILIPS GSM I Q Text: BLF4G20LS-110B UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance	Original	PDF	BLF4G20LS-110B ACPR400 ACPR600 ACPR400 ACPR600 m 110b1 BLF4G20LS-110B RF35 PHILIPS GSM I Q
transistor 2N2222 SMD Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980 Text: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
ACPR750 Abstract: BGF802-20 CDMA800 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Jun 13 2005 Jun 03 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of	Original	PDF	M3D737 BGF802-20 CDMA800 OT365C SCA76 R02/06/pp12 ACPR750 BGF802-20
Untitled Abstract: No abstract text available Text: BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 — 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF7G20L-160P; BLF7G20LS-160P ACPR400k ACPR600k BLF7G20L-160P 7G20LS-160P
W13B Abstract: No abstract text available Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 2 — 20 October 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to	Original	PDF	BLF7G20L-90P; BLF7G20LS-90P to1525 ACPR400k ACPR600k BLF7G20L-90P 7G20LS-90P W13B
capacitor 2200 uF Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750 Text: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.	Original	PDF	BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08

ACPR600 Abstract: BLF4G10LS-120 ACPR400 BLF4G10-120 philips electrolytic capacitor Text: BLF4G10LS-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance	Original	PDF	BLF4G10LS-120 ACPR400 ACPR600 ACPR400 ACPR600 BLF4G10LS-120 BLF4G10-120 philips electrolytic capacitor
ACPR400 Abstract: ACPR600 BLC6G20-110 BLC6G20LS-110 Text: BLC6G20-110; BLC6G20LS-110 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1:	Original	PDF	BLC6G20-110; BLC6G20LS-110 ACPR400 ACPR600 BLC6G20-110 6G20LS-110 ACPR400 ACPR600 BLC6G20LS-110
thermal compound wps II Abstract: austerlitz ACPR750 BGF802-20 CDMA800 RO5880 MBL257 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Feb 24 2003 Jun 13 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of	Original	PDF	M3D737 BGF802-20 CDMA800 OT365C SCA75 613524/05/pp12 thermal compound wps II austerlitz ACPR750 BGF802-20 RO5880 MBL257
h2lb Abstract: STW3101 ACPR400 DCS1800 EGSM900 GSM1800 GSM1900 PCS1900 STW3102 c i 8242 Text: STW3101 TRANSCEIVER MODULE REV. 1.0 - PRODUCT PREVIEW 1 • ■ ■ ■ FEATURES Triple-band GSM850 / DCS1800 / PCS1900 . Supports data transfer applications in multislots GPRS class-12 EDGE Receive capability Integrates: – BiCMOS6G RF transceiver – 3 Receive Band Pass filters	Original	PDF	STW3101 GSM850 DCS1800 PCS1900) class-12 LFBGA104 STW3102 h2lb STW3101 ACPR400 EGSM900 GSM1800 GSM1900 PCS1900 c i 8242
BGF1801-10 Abstract: BLF1049 BGF944 ACPR400 BGF1901-10 BGF844 BLF0810-90 BLF1820-90 gsm power amplifiers 10 w BLF1 Text: EDGE GSM amplifiers Modular solutions for for base-stations 800/900/1800/1900 MHz Covering the 800, 900, 1800 and 1900 MHz ranges for power amplifiers in EDGE GSM cellular base-stations, these high-performance solutions combine a 50-Ω driver module with a final-stage transistor. Identical component outlines for	Original	PDF
Untitled Abstract: No abstract text available Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 2 — 20 October 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to	Original	PDF	BLF7G20L-90P; BLF7G20LS-90P to1525 ACPR400k ACPR600k BLF7G20L-90P 7G20LS-90P
C5750X7R1H106M Abstract: C3225X7R1H155M RF35 SM270 TRANSISTOR 751 Text: BLF6G20LS-75 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF6G20LS-75 ACPR400k ACPR600k BLF6G20LS-75 C5750X7R1H106M C3225X7R1H155M RF35 SM270 TRANSISTOR 751
850 SMD Rework Station Abstract: BLF7G20LS-140P RF35 quick 850 SMD Rework Station BLF7G20L-140P Text: BLF7G20L-140P; BLF7G20LS-140P Power LDMOS transistor Rev. 01 — 21 April 2010 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF7G20L-140P; BLF7G20LS-140P ACPR400k ACPR600k BLF7G20L-140P 7G20LS-140P 850 SMD Rework Station BLF7G20LS-140P RF35 quick 850 SMD Rework Station
ACPR600 Abstract: UF 1301 ACPR400 BLF4G20LS-130 RF35 Text: BLF4G20LS-130 UHF power LDMOS transistor Rev. 01 — 1 June 2007 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF4G20LS-130 ACPR400 ACPR600 14itions BLF4G20LS-130 UF 1301 ACPR400 RF35
BLF3G21-30 Abstract: blf2043f SOT89-5A ACPR600 BLF6G22LS-140 blf2043 BLF6G20LS-140 BLF6G21-10 SOT539A ACPR400 Text: Basestation product portfolio 1-GHz ﬁnals and drivers Product Package Matching Mode of operation I/O Frequency band (min - max) Output power Power gain Efﬁciency Intermodulation distortion (IM3) Adjacent channel leakage ratio (ACLR) Adjacent channel	Original	PDF	400kHz ACPR400) ACPR600) BLF6G10LS-200R OT502B BLF6G10LS-160 OT365C OT539A OT822-1 BLF3G21-30 blf2043f SOT89-5A ACPR600 BLF6G22LS-140 blf2043 BLF6G20LS-140 BLF6G21-10 SOT539A ACPR400

ACPR400 Search Results

ACPR400 Datasheets Context Search

LPC2148 i2c

transistor 1892

TRANSISTOR CW 7808

BLF7G20L-90P

BLF7G20LS-140P

philips Electrolytic Capacitor

SmD TRANSISTOR a75

h2lb

m 110b1

transistor 2N2222 SMD

ACPR750

Untitled

W13B

capacitor 2200 uF

ACPR600

ACPR400

thermal compound wps II

h2lb

BGF1801-10

Untitled

C5750X7R1H106M

850 SMD Rework Station

ACPR600

BLF3G21-30