TM 1812
Abstract: No abstract text available
Text: PCB for Soldering Practice for SMD Standard, Fine Pitch and Discrete Components DS = doppelseitig / double-sided / double face / de dos cara s Roth Elektronik GmbH 55595 Roxheim Hauptstrasse 93 Germany phone +49 0 671 31872 fax +49 (0) 671 30496 1210 aaaaaaasaa
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S0M16
TS0P32
5OL20
OT143:
TM 1812
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S0T143
Abstract: QFP184 BQFP132 MELF SMD PLCC20 QFP52 SOL20 sol-20
Text: Roth Elektronik GmbH 55595 Roxheim Hauptstrasse 93 Germany phone +49 0 671 31872 fax +49 (0) 671 30496 PCB for Soldering Practice for SMD Standard, Fine Pitch and Discrete Components ROTH ELEKTRONIK Challenger % SMD Lab J ,!!!m!!L D-55595 ROXHEIM Germany
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D-55595
T5Qp32
50M16
PLCC20
SOL20
BQFP132
25MIL
QFP184
QFP52
S0T143
MELF SMD
SOL20
sol-20
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PDF
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8550 sot-23
Abstract: No abstract text available
Text: T em ic BA779-2 S e m i c o n d u c t o r s Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25 °C Symbol Value Reverse voltage
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BA779-2
50mmx50mmx
100MHz,
100MHz.
12-Dec-94
8550 sot-23
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74ABT
Abstract: 74ABT02 74ABT02D 74ABT02PW
Text: Philips Semiconductors Product specification Quad 2-input NOR gate 74ABT02 QUICK REFERENCE DATA SYMBOL PARAMETER LOGIC DIAGRAM CONDITIONS Tamb - 25°C; GND = 0V TYPICAL i> T> AO BO UNIT A1 B1 tpLH tpHL Propagation delay An or Bn to Yn tOSLH tOSHL Output to
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74ABT02
SA00362
SA00335
SQT402-1
MO-153
74ABT
74ABT02D
74ABT02PW
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TRANSISTOR D 2627
Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546
Text: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage
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r-33-13
T0126
15A3DIN
TRANSISTOR D 2627
transistor D 2624
transistor k 2628
TRANSISTOR 1300 3B
on 2518 transistor
TCA 321
Telefunken Electronic
12A3
T0126
BU546
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BC817
Abstract: 6B sot-23 MARKING 6C SOT23 BC817-40LT1 6c sot-23 BC817-40LT3G 6B SOT23 Bc817 sot-23 SOT-23 6C marking 6A SOT 23
Text: BC817−16LT1, BC817−25LT1, BC817−40LT1 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 V Collector −Base Voltage
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BC817-16LT1,
BC817-25LT1,
BC817-40LT1
BC817-16LT1/D
BC817
6B sot-23
MARKING 6C SOT23
BC817-40LT1
6c sot-23
BC817-40LT3G
6B SOT23
Bc817 sot-23
SOT-23 6C
marking 6A SOT 23
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cd 1691 cp
Abstract: cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600
Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|Z = 11 dB @ 1 V, 5 mA, 2 GHz
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NE686
OT-143)
NE68618-T1
NE68619-T1
NE68630-T1
NE68633-T1
NE68639-T1
cd 1691 cp
cp 8888
sj 6344
cP8888
nt 9989
1691 AI
bt 67600
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T4AS
Abstract: No abstract text available
Text: Tem ic BA779-2 S e m i c o n d u c t o r s Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25 °C Symbol Value Unit Reverse voltage
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OCR Scan
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BA779-2
50mmx50mmxl
D-74025
12-Dec-94
T4AS
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PDF
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5B1 SOT-23
Abstract: MARKING CODE 5B1 5B1 SOT23-3 BC807-40LT1 AI mm sot 25 SOT-23 Package onsemi BC807
Text: BC807−16LT1, BC807−25LT1, BC807−40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Packages are Available 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO −45 V Collector - Base Voltage
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BC807-16LT1,
BC807-25LT1,
BC807-40LT1
BC807-16LT1/D
5B1 SOT-23
MARKING CODE 5B1
5B1 SOT23-3
BC807-40LT1
AI mm sot 25
SOT-23 Package onsemi
BC807
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SOT23 DIODE marking CODE AV
Abstract: BAV199LT1 BAV199LT3 marking JY marking JY sot-23
Text: BAV199LT1 Preferred Device Dual Series Switching Diode Features • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel http://onsemi.com Use BAV199LT1 to order the 7 inch/3,000 unit reel Use BAV199LT3 to order the 13 inch/10,000 unit reel
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BAV199LT1
BAV199LT1
BAV199LT3
inch/10
BAV199LT1/D
SOT23 DIODE marking CODE AV
marking JY
marking JY sot-23
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Untitled
Abstract: No abstract text available
Text: H 11B 255 _ » A O P T O C O U P L E R Optically coupled isolator consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. features • High maximum output voltage e Very high output/input DC current transfer ratio
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0110b
00355CH
DD3SS11
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FR SOT23-3
Abstract: BC847CLT1G 1B SOT23-3 BC848ALT1G BC846 BC846A BC846ALT1 BC847 1G SOT-23 BC848
Text: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V COLLECTOR 3
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BC846ALT1
BC846,
BC847
BC848
BC846
BC847,
BC850
BC848,
BC849
FR SOT23-3
BC847CLT1G
1B SOT23-3
BC848ALT1G
BC846
BC846A
1G SOT-23
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PDF
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K10S
Abstract: No abstract text available
Text: KU SMD TS SKUS ERI ES OUTLI NEDI MENSI ONS KU10S35NS Package M2F Marking（ｏld） Type No. K10S 3500 350V100A 品名略号 Type No. Date code 10S35 00 00 ② 管理番号（例） Control No. Feat ur e Bi di r ect i onal Hi ghSpeedRes pons e Lar ges ur gecur
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10S35
K10S
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Untitled
Abstract: No abstract text available
Text: KU SMD TS SKUS ERI ES OUTLI NEDI MENSI ONS KU10R29NS Package M2F 290V100A 品名略号 K10S 29 00 3.75 ① ① ② ② ロット記号（例） 2.0 5.1 mm Web For det ai l s ofout l i ne di mens i ons ,r ef er t o our web s i t e or t he Semi conduct orShor
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Untitled
Abstract: No abstract text available
Text: KU SMD TS SKUS ERI ES OUTLI NEDI MENSI ONS KU4F12 Package M2F 120V40A 品名略号 K4F 12 00 ② 3.75 ① ① ② ロット記号（例） 2.0 5.1 mm Web For det ai l s ofout l i ne di mens i ons ,r ef er t o our web s i t e or t he Semi conduct orShor tFor
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100kHz
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Untitled
Abstract: No abstract text available
Text: KU SMD TS SKUS ERI ES OUTLI NEDI MENSI ONS KU4F8 Package M2F 80V40A 品名略号 K4F 08 00 ② 3.75 ① ① ② ロット記号（例） 2.0 5.1 mm Web For det ai l s ofout l i ne di mens i ons ,r ef er t o our web s i t e or t he Semi conduct orShor tFor
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100kHz
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sot260
Abstract: PLC18V8ZIAA
Text: Philips Semiconductors Product specification Zero standby power CMOS versatile PAL devices p| r . 7 rLUIOVO£ DESCRIPTION • In d u stria l co n tro l The PLC18V8Z is a universal PAL device featuring high performance and virtually zero-standby power for power sensitive
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PLC18V8Z
sot260
PLC18V8ZIAA
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PDF
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K10S
Abstract: No abstract text available
Text: 電流制御型 KU シリーズ 面実装品（SMD） TS SKUS ERI ES •外形寸法図 OUTLI NEDI MENSI ONS Package：M2F KU10S31NS 310V100A K10S 31 00 3.75 品名略号 ① ① ② ② ロット記号（例） 2.0 5.1 単位：mm 外形図については新電元Webサイト又は〈半導体製品一覧表〉をご参照
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k10s
Abstract: No abstract text available
Text: 電流制御型 KU シリーズ 面実装品（SMD） TS SKUS ERI ES •外形寸法図 OUTLI NEDI MENSI ONS Package：M2F KU10R27NS 270V100A K10S 27 00 3.75 品名略号 ① ① ② ② ロット記号（例） 2.0 5.1 単位：mm 外形図については新電元Webサイト又は〈半導体製品一覧表〉をご参照
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Untitled
Abstract: No abstract text available
Text: 電流制御型 KU シリーズ 面実装品（SMD） TS SKUS ERI ES •外形寸法図 OUTLI NEDI MENSI ONS Package：M2F KU4F8 80V40A ① K4F 08 00 ② 3.75 品名略号 ① ② ロット記号（例） 2.0 5.1 単位：mm 外形図については新電元Webサイト又は〈半導体製品一覧表〉をご参照
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100kHz
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Untitled
Abstract: No abstract text available
Text: 電流制御型 KU シリーズ 面実装品（SMD） TS SKUS ERI ES •外形寸法図 OUTLI NEDI MENSI ONS Package：M2F KU4F12 120V40A K4F 12 00 ② 3.75 品名略号 ① ① ② ロット記号（例） 2.0 5.1 単位：mm 外形図については新電元Webサイト又は〈半導体製品一覧表〉をご参照
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100kHz
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k10s
Abstract: No abstract text available
Text: 電流制御型 KU シリーズ 面実装品（SMD） TS SKUS ERI ES •外形寸法図 OUTLI NEDI MENSI ONS Package：M2F KU10R29NS 290V100A K10S 29 00 3.75 品名略号 ① ① ② ② ロット記号（例） 2.0 5.1 単位：mm 外形図については新電元Webサイト又は〈半導体製品一覧表〉をご参照
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b 5 3 ^ 31 DDSTEm M il H A P X UHF power transistor BLV194 bTE D — — AUER PHILIPS/DISCRETE FEATURES • Gold metallization ensures excellent reliability. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.
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BLV194
MRC099
MRC097
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PDF
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8550 sot-23
Abstract: CD38P BB804
Text: Tem ic BB804 S e m i c o n d u c t o r s Silicon Epitaxial Planar Dual Capacitance Diode Features • Common cathode Applications Tuning o f separate resonant circuits, push-pull circuits in FM range, especially, for car radios 94 8550 Absolute Maximum Ratings
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BB804
100MHz
12-Dec-94
8550 sot-23
CD38P
BB804
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PDF
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