NEC B 536
Abstract: RD16UJ RD10UJ RD11UJ RD12UJ RD13UJ RD15UJ RD18UJ RD39UJ zener 3683
Text: DATA SHEET ZENER DIODES RD4.7UJ to RD39UJ LOW NOISE SHARP BREAKDOWN CHARACTERISTICS ZENER DIODES 2PIN ULTRA SUPER MINI MOLD DESCRIPTION Type RD4.7UJ to RD39UJ Series are 2PIN Ultra Super Mini PACKAGE DIMENSIONS Unit: mm Mold Package zener diodes possessing an allowable power
|
Original
|
RD39UJ
RD39UJ
NEC B 536
RD16UJ
RD10UJ
RD11UJ
RD12UJ
RD13UJ
RD15UJ
RD18UJ
zener 3683
|
PDF
|
Nec b 616
Abstract: zener diode rd20e b2 NEC 3536 nec 2563 RD20E RD120E NEC Zener diode RD3.0E NEC zener diode 35 series nec zener diode RD13E
Text: DATA SHEET ZENER DIODES RD2.0E to RD120E 500 mW PLANAR TYPE SILICON ZENER DIODES The RD2.0E to RD120E are zener diodes with an allowable PACKAGE DRAWING UNIT: mm dissipation of 500 mW and a planar type glass sealed DHD (double heatsink diode) structure.
|
Original
|
RD120E
RD120E
RD39E.
DO-35
Nec b 616
zener diode rd20e b2
NEC 3536
nec 2563
RD20E
NEC Zener diode RD3.0E
NEC zener diode 35 series
nec zener diode
RD13E
|
PDF
|
NEC zener diode 35 series
Abstract: No abstract text available
Text: DATA SHEET ZENER DIODES RD2.0E to RD120E 500 mW PLANAR TYPE SILICON ZENER DIODES The RD2.0E to RD120E are zener diodes with an allowable PACKAGE DRAWING UNIT: mm dissipation of 500 mW and a planar type glass sealed DHD (double heatsink diode) structure.
|
Original
|
RD120E
RD120E
RD39E.
NEC zener diode 35 series
|
PDF
|
rd4.7sl
Abstract: RD5.1SL RD5.1SL(0)-T1-A RD10SL RD11SL RD12SL RD13SL RD15SL RD16SL RD18SL
Text: DATA SHEET ZENER DIODES RD4.7SL to RD39SL ZENER DIODES 200 mW 2 PIN SUPER MINI MOLD DESCRIPTION Mold Package zener diodes possessing an allowable power dissipation of 200 mW featuring low noise and sharp breakdown characteristic. They are intended for use in audio
|
Original
|
RD39SL
RD39SL
rd4.7sl
RD5.1SL
RD5.1SL(0)-T1-A
RD10SL
RD11SL
RD12SL
RD13SL
RD15SL
RD16SL
RD18SL
|
PDF
|
2SK0655
Abstract: 2SK655 SC-72
Text: Silicon MOS FETs Small Signal 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm 4.0±0.2 3.0±0.2 For switching • Features Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature
|
Original
|
2SK0655
2SK655)
SC-72
2SK0655
2SK655
SC-72
|
PDF
|
D1356
Abstract: RD10UM RD11UM RD12UM RD13UM RD15UM RD16UM RD18UM RD39UM RD6.2UM
Text: DATA SHEET ZENER DIODES RD2.0UM to RD39UM ZENER DIODES 2PIN ULTRA SUPER MINI MOLD DESCRIPTION Type RD2.0UM to RD39UM Series are 2-pin PACKAGE DIMENSIONS Unit: mm Ultra Super Mini Mold Package zener diodes possessing an allowable power dissipation of 150
|
Original
|
RD39UM
RD39UM
D1356
RD10UM
RD11UM
RD12UM
RD13UM
RD15UM
RD16UM
RD18UM
RD6.2UM
|
PDF
|
photodiode preamplifier
Abstract: S6986 S4282-51 S6846 S7136
Text: LIGHT MODULATION PHOTO ICs S6986, S6846 S4282-51, S7136 PRELIMINARY DATA Jul. 1997 FEATURES For optical synchronous detection under high background light condition ● Superior allowable background light level S6986, S4282-51: 10000 lx Typ. S6846, S7136: 4000 lx Typ.
|
Original
|
S6986,
S6846
S4282-51,
S7136
S4282-51:
S6846,
S7136:
photodiode preamplifier
S6986
S4282-51
S6846
S7136
|
PDF
|
PUB4753
Abstract: PU7457
Text: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation
|
Original
|
PUB4753
PU7457)
PUB4753
PU7457
|
PDF
|
RD2.0F
Abstract: nec 3904 SC-1007A B1 6 zener RD20F NEC B 617 Zener Diode B1 9 RD10F RD13F RD15F
Text: DATA SHEET ZENER DIODES RD2.0F to RD82F ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE DESCRIPTION PACKAGE DIMENSIONS NEC type RD∗∗F Series are DHD Double Heatsink Diode (Unit: mm) Construction planar type zener diodes possessing an allowable power dissipation of 1 watt.
|
Original
|
RD82F
DO-41
RD2.0F
nec 3904
SC-1007A
B1 6 zener
RD20F
NEC B 617
Zener Diode B1 9
RD10F
RD13F
RD15F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation
|
Original
|
2SJ0163
2SJ163)
2SK1103
O-236
SC-59
|
PDF
|
RD13SB
Abstract: B1 6 zener 22 B2 zener b3 zener RD18S RD5.6S RD10S RD11S RD27SB RD12S
Text: DATA SHEET ZENER DIODES RD2.0S to RD120S ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Type RD2.0S to RD120S Series are 2 PIN Super Mini in millimeter Mold Package zener diodes possessing an allowable power dissipation of 200 mW.
|
Original
|
RD120S
RD120S
100ine
RD13SB
B1 6 zener
22 B2 zener
b3 zener
RD18S
RD5.6S
RD10S
RD11S
RD27SB
RD12S
|
PDF
|
RD2.0FM
Abstract: C11531E RD10FM RD11FM RD120FM RD12FM RD13FM RD15FM RD16FM RD18FM
Text: DATA SHEET ZENER DIODES RD2.0FM to RD120FM ZENER DIODES 1 W 2 PIN POWER MINI MOLD PACKAGE DIMENSIONS DESCRIPTION Unit: mm Type RD2.0FM to RD120FM series are 2 pin power mini mold package zener diodes possessing an 4.7 ±0.3 allowable power dissipation of 1 W.
|
Original
|
RD120FM
RD120FM
C11531E)
RD2.0FM
C11531E
RD10FM
RD11FM
RD12FM
RD13FM
RD15FM
RD16FM
RD18FM
|
PDF
|
B1 6 zener
Abstract: RD150S RD5.1S(B)-T1-A uPC2581 30 B2 zener NEC 1169 nec 2114 b3 zener rd 62 nec zener RD5.6S RD11S
Text: DATA SHEET ZENER DIODES RD2.0S to RD150S ZENER DIODES 200 mW 2-PIN SUPER MINI MOLD ★ PACKAGE DRAWING Unit: mm DESCRIPTION mold package zener diodes possessing an allowable 0.3±0.05 1.25±0.1 Type RD2.0S to RD150S series are 2 pin super mini 2.5±0.15
|
Original
|
RD150S
RD150S
B1 6 zener
RD5.1S(B)-T1-A uPC2581
30 B2 zener
NEC 1169
nec 2114
b3 zener
rd 62 nec zener
RD5.6S
RD11S
|
PDF
|
GN01081B
Abstract: No abstract text available
Text: GaAs MMICs GN01081B GaAs IC with built-in ferroelectric Driver amplifier for PCS +0.1 10-0.2–0.05 unit: mm Unit VDD Symbol 8 V Circuit current IDD 100 mA Max input power Pin −5 dBm Allowable power dissipation PD 450 mW Operating ambient temperature Topr
|
Original
|
GN01081B
GN01081B
|
PDF
|
|
|
MAZY000
Abstract: MAZY047 MAZY051 MAZY056 MAZY062 MAZY068 MAZY075 MAZY082 MAZY091 MAZY100
Text: Zener Diodes MAZY000 Series MAZ000 Series Silicon planar type Unit : mm For stabilization of power supply 4.4 ± 0.3 • Large power dissipation: PD = 1 W • Zener voltage VZ : 4.7 V to 51 V • Zener voltage allowable deviation: 10% • Auto mounting possible
|
Original
|
MAZY000
MAZ000
MAZY047
MAZY051
MAZY056
MAZY062
MAZY068
MAZY075
MAZY082
MAZY091
MAZY100
|
PDF
|
PU7457
Abstract: PUB4753
Text: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation
|
Original
|
PUB4753
PU7457)
PU7457
PUB4753
|
PDF
|
B2 Zener
Abstract: B1 6 zener zener diode numbering system RD18SB rd 62 nec zener RD110s RD5.1S RD5.1S(B)-T1-A/1431T data sheet zener diode mv 5 MARK b3 zener diode
Text: DATA SHEET ZENER DIODES RD2.0S to RD120S ZENER DIODES 200 mW 2 PIN SUPER MINI MOLD PACKAGE DIMENSIONS DESCRIPTION in millimeter Type RD2.0S to RD120S series are 2 pin super mini power dissipation of 200 mW. 0.3±0.05 1.25±0.1 mold package zener diodes possessing an allowable
|
Original
|
RD120S
RD120S
B2 Zener
B1 6 zener
zener diode numbering system
RD18SB
rd 62 nec zener
RD110s
RD5.1S
RD5.1S(B)-T1-A/1431T
data sheet zener diode mv 5
MARK b3 zener diode
|
PDF
|
tn0008
Abstract: mobile ddr2 TN-00-08 micron BGA SDRAM
Text: TN-00-08: Thermal Applications Introduction Technical Note Thermal Applications Introduction This technical note defines a general method and the criteria for measuring and ensuring that Micron memory components and modules do not exceed the maximum allowable temperature. The specified temperatures will help ensure the reliability and
|
Original
|
TN-00-08:
09005aef805ec8a5/S
09005aef805ec8b1
TN0008
mobile ddr2
TN-00-08
micron BGA SDRAM
|
PDF
|
marking AB2
Abstract: diode zener 1N 398 nec 2563 7es marking RD15ES RD10ES RD11ES RD12ES RD13ES RD16ES
Text: DATA SHEET ZENER DIODES RD2.0ES to RD39ES 400 mW DHD ZENER DIODE DO-34 DESCRIPTION NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation of 400 mW.
|
Original
|
RD39ES
DO-34)
RD39ES
DO-34
DO-34
marking AB2
diode zener 1N 398
nec 2563
7es marking
RD15ES
RD10ES
RD11ES
RD12ES
RD13ES
RD16ES
|
PDF
|
RD12FM
Abstract: RD13FM RD15FM RD16FM RD18FM RD20FM RD10FM RD11FM RD120FM RD6.2
Text: DATA SHEET ZENER DIODES RD2.0FM to RD120FM ZENER DIODES 1 W PLANAR TYPE 2 PIN POWER MINI MOLD PACKAGE DIMENSION Unit: mm DESCRIPTION These products are zener diodes with an allowable power dissipation of 1 W and a planar type 2 pin power mini mold 4.7 ±0.3
|
Original
|
RD120FM
RD12FM
RD13FM
RD15FM
RD16FM
RD18FM
RD20FM
RD10FM
RD11FM
RD120FM
RD6.2
|
PDF
|
RD10MW
Abstract: RD11MW RD12MW RD13MW RD15MW RD16MW RD18MW RD39MW RD4.7MW
Text: DATA SHEET ZENER DIODES RD2.0MW to RD39MW ZENER DIODES 200 mW 3-PIN MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Type RD2.0MW to RD39MW Series are 3-PIN Mini Mold Package Unit: mm zener diodes possessing allowable power dissipation of 200 mW. 2.8 ± 0.2 +0.1
|
Original
|
RD39MW
RD39MW
RD10MW
RD11MW
RD12MW
RD13MW
RD15MW
RD16MW
RD18MW
RD4.7MW
|
PDF
|
2SJ0163
Abstract: 2SJ163 2SK1103
Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation
|
Original
|
2SJ0163
2SJ163)
2SK1103
2SJ0163
2SJ163
2SK1103
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LIGHT MODULATION PHOTO ICs S6986, S6846, S4282-51, S7136 HAMAMATSU PRELIM INARY DATA Jul. 1997 For optical synchronous detection under high background light condition FEATURES • Superior allowable background light level m S6986, S4282-51: 10000 Ix Typ. •
|
OCR Scan
|
S6986,
S6846,
S4282-51,
S7136
S4282-51:
|
PDF
|
S4285-61
Abstract: S4282-11 S5943 7-J12
Text: LIGHT MODULATION PHOTO ICs S4282-11, S5943 S4282-51, S4285-61 HAMAMATSU TECHNICAL DATA For optical synchronous detection under high background light condition FEATURES • Superior allowable background light level. 10000b: Typ. S4282-11, S4282-51 4000k Typ. (S5943, S4285-61)
|
OCR Scan
|
S4282-11,
S5943
S4282-51,
S4285-61
10000b:
S4282-51)
4000k
S5943,
S4285-61)
S4285-61
S4282-11
7-J12
|
PDF
|