500w pioneer power amp circuit diagram
Abstract: 600va ups circuit diagrams ELECTRONIC BALLAST DIAGRAM for PL-C 26W Electronic ballast 40W using 13005 transistor hp 3120v METAL HALIDE 400W schematic diagram Electronic Ballast Metal Halide 27W08MB 68W81 a 3120v
Text: 002-003 Specials Ad spread 5/13/05 9:15 AM Page 2 002-003 Specials Ad spread 5/13/05 9:15 AM Page 3 PORTABLE LIGHTING Whatever your lighting conditions, wherever your location, chances a re Woodhead makes the portable light that best serves your needs. F rom fluorescent hand lamps for routine task lighting to the
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WT3C-20
WT3F-20
WT6C-25
WT6C-50
WT6F-25
WT6F-50
Y560B
Y560CF
Y560PF
Y560R
500w pioneer power amp circuit diagram
600va ups circuit diagrams
ELECTRONIC BALLAST DIAGRAM for PL-C 26W
Electronic ballast 40W using 13005 transistor
hp 3120v
METAL HALIDE 400W
schematic diagram Electronic Ballast Metal Halide
27W08MB
68W81
a 3120v
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SOOW 12-4 IF
Abstract: electronic ballast schematic 12volt schematic diagram Electronic Ballast Metal Halide 8R4006 ELECTRONIC BALLAST T5 8w LAMP SCHEMATIC LR6837 LT 9228 500w dc to dc supply 150w hid electronic ballast schematic circuit diagram 92536N
Text: 002-003 Specials Ad spread 5/13/05 9:15 AM Page 2 002-003 Specials Ad spread 5/13/05 9:15 AM Page 3 PORTABLE LIGHTING Whatever your lighting conditions, wherever your location, chances a re Woodhead makes the portable light that best serves your needs. F rom fluorescent hand lamps for routine task lighting to the
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Original
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WT3C-20
WT3F-20
WT6C-25
WT6C-50
WT6F-25
WT6F-50
Y560B
Y560CF
Y560PF
Y560R
SOOW 12-4 IF
electronic ballast schematic 12volt
schematic diagram Electronic Ballast Metal Halide
8R4006
ELECTRONIC BALLAST T5 8w LAMP SCHEMATIC
LR6837
LT 9228
500w dc to dc supply
150w hid electronic ballast schematic circuit diagram
92536N
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Untitled
Abstract: No abstract text available
Text: DUO-TOUCH –Two-HandControlModules Features •
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45-mm-wideà
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EN574
Abstract: ISO13851 OTBVR81 EN954-1 ISO13849-1 ISO13855
Text: DUO-TOUCH – Two-Hand Control Modules Models AT-FM-2A, AT-AM-2A, and AT-BM-2A, for Use with Two Actuating Devices Features • Two redundant, forced-guided mechanically linked output contacts rated at 4 A • One auxiliary N.C. relay output rated at 0.5 A
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45-mm-wide
EN574
ISO13851
OTBVR81
EN954-1
ISO13849-1
ISO13855
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ST37 steel metal
Abstract: turck 1-800-544-7769 barrel sensor ST37 steel aisi 316l N3000 turck 1-800-544-7769
Text: ñEdition: TURCK Inc. ñ3000 Campus Drive Minneapolis, MN 55441-2656 ñPhone: 763-553-7300 ñApplication Support: 1-800-544-7769 ñFax 763-553-0708 ñwww.turck.com inductive sensor with stainless steel front cap Bi10-EM30F-AN6X-H1141 M30 x 1,5 36/5 ● threaded barrel, M30x1
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Bi10-EM30F-AN6X-H1141
M30x1
IP69K
ST37 steel metal
turck 1-800-544-7769 barrel sensor
ST37 steel
aisi 316l
N3000
turck 1-800-544-7769
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transducer 61326
Abstract: CISPR class B conducted
Text: SUPPLIER DRAWING SD SPECIFICATION H O N E Y W E L L SOLID STATE ELECTRONICS CENTER MINNEAPOLIS, MINNESOTA 55441 Federal Cage Code No. 22024846 34168 TITLE: PPTR, CE SUPPLEMENT, EN 61326-1 PREPARED BY G. Monzo DATE 4/24/02 ORIGINATOR APPROVED BY DATE J. Dcamp
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J 5027-R
Abstract: Dlink 526b bc 540b ch9i 5027-r Power DIODE A30 8155 intel microprocessor block diagram 55A6 marking 55a4 0x10-Timer
Text: Advance Information CX29503 Broadband Access Multiplexer BAM Re vi e w This document contains information on a product under development. The parametric information contains target parameters that are subject to change. Distinguishing Features • Capacity
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CX29503
CX29503:
J 5027-R
Dlink 526b
bc 540b
ch9i
5027-r
Power DIODE A30
8155 intel microprocessor block diagram
55A6
marking 55a4
0x10-Timer
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.75 (am Process (Lel(= 0.6 |am) • Read/Write Cycle Times < 17 ns (Typical) < 2 5 ns (-55 to 125°C)
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1x106rad
1x1011
HX6256
28-Lead
MIL-STD-1835,
CDIP2-T28
36-Lead
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID SbE D 5544200 ODDQMTb SÔD • LITT J Z - ([ ■ GUNN DIODES HIGH FREQUENCY 22 to 110 GHz FEATURES • • • • • • GaAs and InP Devices High Efficiency Low Package Parasitics High Reliability Low FM and AM Noise Good Power and Frequency Stability
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100nsec.
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)
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HLX6256
1x106ra
1x10l4
1x101
4551A72
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72284
Abstract: No abstract text available
Text: AM P Premises Power and Electrical Building Products Part Number Index Catalog 889140 5 -or Note: The numerical index lists all parts by base series no only. Complete part nos. {with prefixes and/or suffixes) are shown on the page(s) indicated. Part Number
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7904SB
7906SB
MMT-9402
72284
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 |im Low Power Process (Leff= 0.5 |am) • Read/Write Cycle Times < 25 ns (-55 to 125°C)
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1x106rad
1x101
1x109
HLX6228
32-Lead
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Untitled
Abstract: No abstract text available
Text: M/A-COM AI>V SEMICONDUCTOR Am 57E D 5bM21fl3 0ÜDDE32 5 T 'S / - // MA4GM202F-500 2000 2012 2100 MA4GM202F SERIES GaAs M M IC D C -4 SPDT Switch Features • BROADBAND: DC - 4 GHz ■ CURRENT CONSUMPTION <100 /¿A ■ 3 NANOSECOND SWITCHING ■ EXCELLENT INTERMODULATION
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5bM21fl3
DDE32
MA4GM202F-500
MA4GM202F
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products HX6409 HX6218 HX6136 FIFO— SOI FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jim Process (Leff = 0.65|am) • Read/Write Cycle Times <35 ns (-55° to 125°C)
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HX6409
HX6218
HX6136
1x106
1x101
1x109
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Untitled
Abstract: No abstract text available
Text: HONEYÜI ELL/ S S E C 3ÖE D D 4SS1Ô72 GQOOSSfl 1 HH0N3 Advance Information 16K x 1 MAGNETORESISTIVE RAM MRAM T ^ fc -^ -O S T FEATURES Non-volatile 250 ¡as Read Cycle Time Fabricated with RICMOS 1.2 |am Process 400 ns Write Cycle Time Write Cycles in Excess of 1x1015
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1x101
1x10e
1x1014c
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • • 1 K x 36, 2 K x 18, 4 K x 9 O rganizations Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 j^m Process (Leff = 0.65|am) OTHER • R ead/W rite Cycle Tim es <35 ns (-55° to 125°C)
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1x10srad
1x1014
1x109
1x1011
1x1010
HX6409
HX6218
HX6136
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Untitled
Abstract: No abstract text available
Text: 2 WORKSTATION OUTLETS AM P F o u r-P o sitio n D ata C o n n ecto r S y stem fo r 150 Ohm S h ield ed C able r% . Patch Panels Page 87 Connector Kits Page 53 Cable Assemblies Pages 132-133 1 Faceplate Kits Page 53 llOConnect XC Cross Connect Page 102-104 ,L
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ignitron philips pl 5544
Abstract: PL5544 thyratrons Thyratron Thyratron 5544 Ignitron 40403 HT 1000 4 ignitron philips 4061
Text: PL 5544 PHILIPS THYRATRON, xenon-filled triode THYRATRON, triode à remplissage de xénon STROIvîTORRÔHRE, Triode mit Xenonfüllung Application: motor control, ignitron firing service Applications réglage de moteurs, circuits d ’amorçage des ignitrons
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40403/0C
7R302S9
PL5544
ignitron philips pl 5544
thyratrons
Thyratron
Thyratron 5544
Ignitron
40403
HT 1000 4
ignitron philips
4061
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID Litton SbE D • 5544200 0000522 4T2 ■ L I T T Low -D isto rtion /M ed iu m Pow er M ic ro w a v e G a A s FET Electron Devices D-6836 Preliminary Specifications FEATURES @ 18 g h z ■ O utput Power 21 ■ IdB Power Gain 6.5 dB @ 18 GHz
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D-6836
D-6836
amplifie07
2285C
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twinaxial
Abstract: amp 1-554000-7
Text: AMP AMP Four Position Data Connector and Related Products for 150 Ohm Shielded Twisted Pair Applications Catalog 82167 Revised 3 96 Product Facts • Insulation displacement contacts ■ M ulti-w ire/m ulti-cable range; 22-30 AWG solid or stranded ■ Toolless assembly
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hartwell
Abstract: Western Electric 300b airtronic 5501 TEXAS PLYMOUTH STC CT 510 063 Tekelec airtronic
Text: là PER ¡COM Sales Representatives and Distributors CORPORATE HEADQUARTERS Pericom Semiconductor Corporation 2380 Bering Drive, San Jose, CA95131 408 435-0800 408 435-1100 Fax EUROPEAN OFFICE SOUTHWESTERN OFFICE SOUTHEASTERN OFFICE SOUTHCENTRAL OFFICE NORTHEAST & CANADA
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CA95131
1143-B
I99ti
hartwell
Western Electric 300b
airtronic 5501
TEXAS PLYMOUTH
STC CT 510 063
Tekelec airtronic
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AXP 209 IC
Abstract: sem 2105 16 pin AXP 202 AEG T 51 N 1200 77480 48409 IC SEM 2105 Pioneer PA 0016 94-4033 sem 2105
Text: Tem ic Sales Offices Semiconductors Addresses Europe Poland Sweden TE M IC TELEFU N K EN m icroelectronic Gm bH Theresienstrasse 2 74072 H eilbronn Postfach 3535, PLZ 74025 Tel: 49 7131 67 3737 Fax: 49 7131 672444 TEM IC TE LE FU N K E N m icroelectronic Gm bH
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3194621Road
AXP 209 IC
sem 2105 16 pin
AXP 202
AEG T 51 N 1200
77480
48409
IC SEM 2105
Pioneer PA 0016
94-4033
sem 2105
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str f 6456
Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Text: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH
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09-Dec-96
str f 6456
str x 6456
SM 5126 BP
STR F 6168
str 6668
STR G 6352
STR 6456
str f 6468
321 CJ 7121
AXP 209 IC
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TFK U 3212 M
Abstract: TFK U 3212 telefunken rc 890 cd LIN 5642 G tfk 623 ta 8659 cn str f 6268 cd 3313 eo PEX 8603 ORP 12
Text: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark T E M IC D ansk c /o A E G Industri A/S R oskildevej 8 -1 0 2 620 A lbeitslund Tel: 45 4 2 6485 22 Fax: 45 43 6262 28 T E M IC T E L E F U N K E N m icro electro n ic G m bH K ruppstrasse 6
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