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    AMI SEMICONDUCTOR Search Results

    AMI SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AMI SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8085 mini projects

    Abstract: full subtractor circuit using decoder and nand ga DF102 ic tda 2030 8085 mini projects with low budget AMI 9198 na44 DF422 16 BIT ALU design with verilog/vhdl code AMI 8232
    Text:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,/6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


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    rda 5807 sp

    Abstract: rda 5807 rda 5807 sp fm receiver ic Elcom vhdl code M8490 IC TDA 2208 NA51 transistor datasheet nsm 3914 am 2901 verilog na44
    Text:  0LFURQ &026 *DWH $UUD\ 'DWD %RRN $0,/*  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


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    tda 8210

    Abstract: rtl 8112 NA51 transistor datasheet 8085 microprocessor simulator NA52 transistor datasheet AMI MG82C54 NA51 transistor data sheet 8 BIT ALU design with verilog/vhdl code na2x tda 4020
    Text:  0LFURQ &026 *DWH $UUD\ 'DWD %RRN $0,+*  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


    Original     		PDF

    SX049

    Abstract: Elmo Semiconductor kirk key AMI siemens
    Text: AppSpec 2.2.final 12/11/97 9:38 AM Page 1 Vo l u m e 2 , N u m b e r 2 Said & Done . . . . . . . . . . . . 2 S u m m e r 1 9 97 AMI International . . . . . . . . 3 AMI Refines Strategic Focus Elmo Taps AMI Mixed-Signal ICs ASSPs . . . . . . . . . . . . . . . 4-5


    Original     		PDF

    NA2X

    Abstract: 16 BIT ALU design with verilog/vhdl code QN-08 1329 vhdl code gold sequence code tda 2030 ic 5 pins AMI 9198 na44 MG82C54 32 BIT ALU design with verilog/vhdl code 8085 memory organization
    Text:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


    Original     		PDF

    schematic diagram online UPS

    Abstract: na44 AMI 9198 NA51 MG82C54 32 BIT ALU design with verilog/vhdl code book national semiconductor AMI 8232 AMIS 690 DF411
    Text:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,/6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


    Original     		PDF

    tda 8210

    Abstract: M82530 rtl 8112 MG82C54 32 BIT ALU design with verilog/vhdl code AMI 9198 NA72 na51 datasheet df402 DL002
    Text:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6  9ROW Copyright  1998 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


    Original     		PDF

    N256S0818

    Abstract: No abstract text available
    Text: AMI Semiconductor, Inc. IMD - Medical Business Unit 650 N. Mary Ave. Sunnyvale, CA 94085 PH: 408-962-1900, FAX: 408-962-1997 N256S0818HDA/N256S0830HDA 256Kb Low Power Serial SRAMs 32K x 8 bit Organization Overview Features The AMI Semiconductor serial SRAM family


    Original     		PDF N256S0818HDA/N256S0830HDA 256Kb 23476-H N256S0818

    N256S0830HDA

    Abstract: N256S0818HDA
    Text: AMI Semiconductor, Inc. N256S0818HDA/N256S0830HDA Advance Information ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 256Kb Low Power Serial SRAMs 32K x 8 bit Organization Overview Features The AMI Semiconductor serial SRAM family


    Original     		PDF N256S0818HDA/N256S0830HDA 256Kb N256S0830HDA N256S0818HDA

    PEEL20CG10

    Abstract: PALC20G10
    Text: AMI PEEL 20CG10 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL20CG10 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 20CG10 PEEL20CG10 480Kn PALC20G10

    peel153

    Abstract: No abstract text available
    Text: PEEL 153 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL153 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,


    OCR Scan     		PDF PEEL153

    18CV825

    Abstract: PEEL18CV8 AMI 18CV8 18cv8 programming ami equivalent gates ami equivalent gates of each core cell PEEL18CV8 18CV8-15
    Text: PEEL 18CV8 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 General Description Features The AMI PEEL18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 18CV8 PEEL18CV8 464C2 480Kfi D014273 18CV825 PEEL18CV8 AMI 18CV8 18cv8 programming ami equivalent gates ami equivalent gates of each core cell 18CV8-15

    18CV8

    Abstract: 18CV8-15 18CV815 ami equivalent gates 18CV825 PEEL18CV8
    Text: PEEL 18CV8 AMI SEMICONDUCTORS February 1993 CMOS Programmable Electrically Erasable Logic Device Features General Description The AMI PEEL18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 18CV8 PEEL18CV8 480Ki2 480KD 18CV8 18CV8-15 18CV815 ami equivalent gates 18CV825

    PEEL 253

    Abstract: No abstract text available
    Text: AMI PEEL 253 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL253 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,


    OCR Scan     		PDF PEEL253 PEEL 253

    22CV10Z

    Abstract: No abstract text available
    Text: AMI PEEL 22CV10 Z SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features General Description The AMI PEEL22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 22CV10 PEEL22CV10 PEEL22CFigure 22CV10Z

    18CV8

    Abstract: 18CV825 18CV815 18cv8 programming 18CV8-15 HAS64 PEEL18CV8 AMI PEEL18CV8
    Text: AMI PEEL 18CV8 SEMICONDUCTORS February 1993 CMOS Programmable Electrically Erasable Logic Device General Description Features The AMI PEEL18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 18CV8 PEEL18CV8 18CV8 18CV825 18CV815 18cv8 programming 18CV8-15 HAS64 AMI PEEL18CV8

    PEEL20CG10

    Abstract: 20CG10 PEEL 20Cg10 PALC20G10
    Text: PEEL 20CG10 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL20CG10 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 20CG10 PEEL20CG10 20CG10 PEEL 20Cg10 PALC20G10

    PEEL programming

    Abstract: PEEL173 Erasable Programmable Logic Device 610 PLS173 8-12pF
    Text: AMI PEEL 173 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 Features General Description FPLA Architecture The AMI PEEL173 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power,


    OCR Scan     		PDF PLS173 PEEL173 PEEL programming Erasable Programmable Logic Device 610 PLS173 8-12pF

    1B60

    Abstract: PEEL programming msi ms 1772
    Text: AMI PEEL 173 SEMICONDUCTORS CM O S Programmable Electrically Erasable Logic Device February 1993 Features General Description FPLA Architecture The AMI PEEL173 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power,


    OCR Scan     		PDF PEEL173 1B60 PEEL programming msi ms 1772

    22cv10

    Abstract: No abstract text available
    Text: PEEL 22CV10 Z AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 22CV10 t22CV10 PEEL22CV10

    peel273

    Abstract: No abstract text available
    Text: AMI PEEL 273 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL273 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,


    OCR Scan     		PDF PEEL273 433ft

    PEEL 253

    Abstract: PEEL253
    Text: AMI PEEL 253 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL253 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,


    OCR Scan     		PDF PEEL253 PEEL 253

    22CV10

    Abstract: No abstract text available
    Text: AMI PEEL 22CV10 Z SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 Features General Description Advanced CMOS EEPROM Technology The AMI PEEL22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance,


    OCR Scan     		PDF 22CV10 200jiA PEEL22CV10 PEEL22CVV10 480KH 22CV10CZ)

    Untitled

    Abstract: No abstract text available
    Text: PEEL 20CG10 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device General Description Features The AMI PEEL20CG10 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable, and architecturally enhanced alternative to conventional


    OCR Scan     		PDF 20CG10 PEEL20CG10 PEEL20CG10