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Abstract: No abstract text available
Text: High Power Bi-Directional Amplifier, 5/20 Watts, 2.4 GHz to 2.5 GHz, 1 us switching, 20 dB Gain, SMA TECHNICAL DATA SHEET PE15B5000 PE15B5000 is an S-Band bi-directional module that delivers high quality TX signals while amplifying the RX signal with an advanced LNA to produce the highest possible data rates. The amplifier operating in the 2.4 to 2.5 GHz frequency range and
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PE15B5000
PE15B5000
wer-bi-directional-amplifier-5-20-watts-2
5-ghz-sma-pe15b5000-p
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Untitled
Abstract: No abstract text available
Text: STA-025-20-20-SMA DATA SHEET Bi-Directional Amplifier, High Power 5/20 Watts Linear/CW, 2.4 GHz to 2.5 GHz, 1 us switching, 20 dB Gain, SMA The STA-025-20-20-SMA is an S-Band bi-directional module that delivers high quality TX signals while amplifying the RX signal with an advanced LNA to produce
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STA-025-20-20-SMA
STA-025-20-20-SMA
wer-5-20-watts-linear-sta-025-20-20-sma-p
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Untitled
Abstract: No abstract text available
Text: Advanced Data Sheet VFHY105-010 90 Degree Hybrid MICROWAVE PRODUCTS GROUP 1.9 – 2.4 GHz Features Highly repeatable monolithic design Very low insertion loss High Isolation / Low VSWR Excellent phase & amplitude balance Power handling: 4 Watts
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VFHY105-010
VFHY105-010
applic811
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Abstract: No abstract text available
Text: Advanced Data Sheet VFHY106-010 90 Degree Hybrid MICROWAVE PRODUCTS GROUP 2.2 – 2.9 GHz Features Highly repeatable monolithic design Very low insertion loss High Isolation / Low VSWR Excellent phase & amplitude balance Power handling: 4 Watts
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VFHY106-010
VFHY106-010
RevJ0811
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QB-925
Abstract: No abstract text available
Text: Model # QB-925 8 Watt Hybrid Driver Amplifier 2.0 – 6.0 GHz, 4 Watt Hybrid Driver Amplifier • High Saturated Output Power to 10 Watts • Rugged GaN Technology • Balanced Output Configuration for Optimum Return Loss • 2 Stage Amplifier with Independent Gate & Drain Bias Controls
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QB-925
QB-925
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Untitled
Abstract: No abstract text available
Text: Advanced Data Sheet VFHY106-010 90 Degree Hybrid MICROWAVE PRODUCTS GROUP 2200 – 2900 MHz Features Highly repeatable monolithic design Very low insertion loss High Isolation / Low VSWR Excellent phase & amplitude balance Power handling: 4 Watts
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VFHY106-010
VFHY106-010
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VFHY105-010
Abstract: No abstract text available
Text: Advanced Data Sheet VFHY105-010 90 Degree Hybrid MICROWAVE PRODUCTS GROUP 1900 – 2400 MHz Features Highly repeatable monolithic design Very low insertion loss High Isolation / Low VSWR Excellent phase & amplitude balance Power handling: 4 Watts
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VFHY105-010
VFHY105-010
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ZVE-3W-183
Abstract: No abstract text available
Text: NON-CATALOG Coaxial High Power Amplifier 50Ω 3W ZVE-3W-183X+ 5.9 to 18 GHz The Big Deal CASE STYLE: BN1327 • Wideband 5.9 to 18 GHz • Output Power, 3 Watts • Gain, 35 dB • Low cost $1295.00 Product Overview ZVE-3W-183X+ is a Class-A, four stage, unconditionally stable amplifier which includes built-in voltage regulation
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ZVE-3W-183X+
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Abstract: No abstract text available
Text: Coaxial High Power Amplifier 50Ω 3W ZVE-3W-183+ 5.9 to 18 GHz The Big Deal • Wideband 5.9 to 18 GHz • Output Power, 3 Watts • Gain, 35 dB • Low cost $1295.00 ZVE-3W-183+ Price: $1295.00 QTY 1-9 Product Overview ZVE-3W-183+ is a Class-A, four stage, unconditionally stable amplifier which includes built-in voltage regulation and
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ZVE-3W-183X
Abstract: ZVE-3W-183 ZVE-3w 3w-183X
Text: Coaxial High Power Amplifier 50Ω 3W ZVE-3W-183+ 5.9 to 18 GHz The Big Deal • Wideband 5.9 to 18 GHz • Output Power, 3 Watts • Gain, 35 dB • Low cost $1295.00 ZVE-3W-183+ Price: $1295.00 QTY 1-9 ZVE-3W-183X+ Price: $1220.00 (QTY 1-9) Product Overview
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ZVE-3W-183+
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Untitled
Abstract: No abstract text available
Text: Coaxial High Power Amplifier 50Ω 3W ZVE-3W-183+ 5.9 to 18 GHz The Big Deal • Wideband 5.9 to 18 GHz • Output Power, 3 Watts • Gain, 35 dB • Low cost $1295.00 ZVE-3W-183+ Price: $1295.00 QTY 1-9 ZVE-3W-183X+ Price: $1220.00 (QTY 1-9) Product Overview
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STR W 5753 a
Abstract: str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015 CGH27015F 44019
Text: CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX
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CGH27015
CGH27015
CGH2701
27015P
STR W 5753 a
str w 5753
str 5753
CGH27015-TB
10UF
470PF
CGH27015F
44019
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Abstract: No abstract text available
Text: PTF 10043 GOLDMOS Field Effect Transistor 12 Watts, 1.9–2.0 GHz Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device
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P4917-ND
P5276
1-877-GOLDMOS
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Abstract: G200 atcb
Text: PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10043 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts
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P5276
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1301-PTF
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1920A20
Abstract: No abstract text available
Text: R.B.063099 1920A20 20 Watts, 25 Volts, Class A 10 dB Gain Personal 1930 – 1990 MHz GENERAL DESCRIPTION The 1920A20 is a COMMON EMITTER transistor capable of providing 20 watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS
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1920A20
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iM338
Abstract: MAAP-000076-PKG001 MAAP-000076-PED000 MAAP-000076-SMB001 MAAP-000076-SMB004
Text: RoHS Compliant Amplifier, Power, 14W 1.3-2.5 GHz MAAP-000076-PKG001 Rev A Preliminary Datasheet Features ♦ 14 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Primary Applications ♦ Radio Communications ♦ SatCom
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MAAP-000076-PKG001
MAAP-000076-PKG001
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MAAP-000076-PED000
MAAP-000076-SMB001
MAAP-000076-SMB004
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oz 9939
Abstract: CGH21120F-TB ATC600F atc600s 09391 17040 CGH2112 CGH21120F RO4350 Linearizer
Text: PRELIMINARY CGH21120F 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for
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CGH21120F
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oz 9939
CGH21120F-TB
ATC600F
atc600s
09391
17040
CGH2112
RO4350
Linearizer
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Abstract: No abstract text available
Text: Datasheet Rev A. A.15. Rev Feb 14. Technical Datasheet GT-1051B Microwave Power Amplifier 10 MHz to 50 GHz Broadband High-Power Instrumentation Amplifier 35528 -Rev.A / US012314 Sandpiper House, Aviary Court, Wade Road, Basingstoke, Hampshire, RG24 8GX, UK
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Abstract: No abstract text available
Text: Datasheet Rev A. A.15. Rev Feb 14. Technical Datasheet GT-1050B Microwave Power Amplifier 2 GHz to 50 GHz Broadband High-Power Instrumentation Amplifier 35527 -Rev.A / US012314 Sandpiper House, Aviary Court, Wade Road, Basingstoke, Hampshire, RG24 8GX, UK
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PAR ofdm
Abstract: CGH27030 CGH27030F CGH27030-TB RO4350B 10UF 470PF str f 3626
Text: CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH27030F
CGH27030F
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CGH27030-TB
RO4350B
10UF
470PF
str f 3626
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440166
Abstract: CGH27030 s str 6808 transistor j326 CGH27030f 3-500z
Text: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030
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CGH27030
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27030F
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440166
CGH27030 s
str 6808
transistor j326
3-500z
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CGH27030
Abstract: 3-500z
Text: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030
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RF Transistor s-parameter
Abstract: j1108 CGH25120 CGH25120F-TB 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Text: CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz
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CGH25120F
CGH25120F
CGH2512
CGH25120F-Tfor
RF Transistor s-parameter
j1108
CGH25120
CGH25120F-TB
2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10043* 12 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10043 is an internally matched, common source, n-channel en hancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts minimum
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P4917-N
P5276
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