Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ANGS12 Search Results

    ANGS12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    xxww

    Abstract: Chip Inductor CS Coilcraft
    Text: Coilcraft S-Parameter Data for RF Surface Mount Inductors 1008LS Series Chip Inductors Version 1008LS August, 2012 Coilcraft, Inc. 2012 Coilcraft two-port S-parameter data files are based on empirical measurements of Coilcraft RF Surface Mount Inductors. The data files are used as "black box"


    Original
    PDF 1008LS xxww Chip Inductor CS Coilcraft

    47-2001

    Abstract: ANG-S21 TGF4124-EPU
    Text:  4124 TGF4124-EPU • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz


    Original
    PDF TGF4124-EPU TGF4124-EPU 47-2001 ANG-S21

    RO4850

    Abstract: 113 marking code transistor ROHM A004R MCH155 MGA-655T6 c1005* MCH155 MCR 052 PIN 100
    Text: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’


    Original
    PDF MGA-655T6 MGA-655T6 AV02-0322EN RO4850 113 marking code transistor ROHM A004R MCH155 c1005* MCH155 MCR 052 PIN 100

    Untitled

    Abstract: No abstract text available
    Text: TGF4118 18 mm Discrete HFET August 5,2008 • • • • • ο4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm


    Original
    PDF TGF4118 TGF4118

    ANGS11

    Abstract: No abstract text available
    Text: MMA-022028 2 - 20 GHz Fully Matched Distributed Power Amplifier 28 dBm Power Amplifier Preliminary Data Sheet August 2007 Features: • Usable Frequency Range: 2-20 GHz • Excellent RF Performance: o 28 dBm P1dB o 7 dB Gain • MTTF > 100 years @ 85°C ambient temperature


    Original
    PDF MMA-022028 MMA-022028 ANGS11

    RO4850

    Abstract: 113 marking code transistor ROHM C1005C0G1H4R7C c1005* MCH155 toko 4828 PHEMT marking code a 0322E GaAs 0.15 pHEMT A004R MCH155
    Text: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’


    Original
    PDF MGA-655T6 MGA-655T6 AV02-0322EN RO4850 113 marking code transistor ROHM C1005C0G1H4R7C c1005* MCH155 toko 4828 PHEMT marking code a 0322E GaAs 0.15 pHEMT A004R MCH155

    Untitled

    Abstract: No abstract text available
    Text: Ceramic Packaged GaAs Power pHEMT AM030WX-BH-R March 2010 Rev 0 DC-10 GHz DESCRIPTION AMCOM’s AM030WX-BH-R is part of the BH series of GaAs pHEMTs. This part has a total gate width of 6mm. The AM030WX-BH-R is designed for high power microwave applications, operating up to 10 GHz. The


    Original
    PDF AM030WX-BH-R DC-10 AM030WX-BH-R

    s parameters 4ghz

    Abstract: GSH904-89 MAG-S22 s 0934
    Text: GSH904-89 Discrete HFET Product Features ● 0. 1 to 4GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3.5 dB Noise Figure Product Description 4 The GSH904-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 4GHz frequency range with 22 dB


    Original
    PDF GSH904-89 GSH904-89 100MHz s parameters 4ghz MAG-S22 s 0934

    16166

    Abstract: RLAS2026A Box393
    Text: RLAS2026A 2000 ~ 2600 MHz Super Low Noise Amplifier1 RLAS2026A is an ultra low noise figure, wideband, and unconditionally stable SMT packaged amplifier with exceptionally low input and output VSWR. The amplifier offers typical 0.60 dB noise figure, 20 dB input and output return losses, 26.0 dB


    Original
    PDF RLAS2026A RLAS2026A MIL-STD-202 MILSTD-883. 16166 Box393

    113 marking code transistor ROHM

    Abstract: A004R MCH155 MGA-655T6 c1005* MCH155 CW 7810 RO4850
    Text: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’


    Original
    PDF MGA-655T6 MGA-655T6 MGA-655T6-BLKG MGA-655T6-TR1G MGA-655T6-TR2G AV02-0322EN 113 marking code transistor ROHM A004R MCH155 c1005* MCH155 CW 7810 RO4850

    GSH912-12

    Abstract: GSH912 RG03 GSH912-00 angS12 0841 MAG-S11 unmatched bare amplifier 179-14 1200UM
    Text: GSH912 1200um Discrete HFET Product Features ● 0. 1 to 12GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3 dB Noise Figure ● Bare Die -00 or 0805 DFN (-12) plastic package Product Description The GSH912 is an unmatched General Purpose Medium Power Amplifier


    Original
    PDF GSH912 1200um 12GHz GSH912 100MHz GSH912-12 RG03 GSH912-00 angS12 0841 MAG-S11 unmatched bare amplifier 179-14

    MMA445133-02

    Abstract: No abstract text available
    Text: MGA-445343-99 4.4 – 5.3 GHz 20W High Efficiency Linear Power Amplifier Preliminary Data Sheet Oct 2010 Features: • • • • • • • • 13 dB Gain 43 dBm P-3dB 35 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 20% Efficiency at 35 dBm Linear Output Power


    Original
    PDF MGA-445343-99 64QAM) MGA-445343-99 2N2907 IRF242 MMA445133-02

    MTBF calculation excel

    Abstract: RC ladder networks smd Kemet MMC t428 C0402C474 Ansoft C0402C105K8PAC A700D107M006ATE015 arcotronics C4 CWR29
    Text: KEMET Spice Simulation Software Modeling the frequency behavior of aluminum, ceramic, film, and tantalum, surface mount capacitors manufactured by KEMET Electronics Corp. This software is intended to work within Windows environment and is available free from KEMET.


    Original
    PDF 100kHz MTBF calculation excel RC ladder networks smd Kemet MMC t428 C0402C474 Ansoft C0402C105K8PAC A700D107M006ATE015 arcotronics C4 CWR29

    Untitled

    Abstract: No abstract text available
    Text:  4124 TGF4124 • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124 RF Performance at F = 2.3 GHz


    Original
    PDF TGF4124 TGF4124

    ANG-S21

    Abstract: TGF4124
    Text:  4124 TGF4124 • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124 RF Performance at F = 2.3 GHz


    Original
    PDF TGF4124 TGF4124 ANG-S21

    ai 972

    Abstract: SURFACE MOUNT,0603 ANG-S21 TGF4112-EPU 144028 ps 8170
    Text:  4112 TGF4112-EPU • • • • • 12 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz Nominal Gain of 12.7 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4112-EPU RF Performance at F = 2.3 GHz


    Original
    PDF TGF4112-EPU TGF4112-EPU ai 972 SURFACE MOUNT,0603 ANG-S21 144028 ps 8170

    xxww

    Abstract: Chip Inductor CS Coilcraft
    Text: Coilcraft S-Parameter Data for RF Surface Mount Inductors 0402HL Series Chip Inductors Version 0402HL July, 2012 Coilcraft, Inc. 2012 Coilcraft two-port S-parameter data files are based on empirical measurements of Coilcraft RF Surface Mount Inductors. The data files are used as "black box"


    Original
    PDF 0402HL xxww Chip Inductor CS Coilcraft

    Untitled

    Abstract: No abstract text available
    Text: MGA-24106 High-Gain, Low Current Low Noise Amplifier with Variable Current and Shutdown Function Data Sheet Description Features Avago Technologies’ MGA-24106 is a low-noise amplifier LNA designed for GPS/ISM/WiMAX applications in the (0.9-3.5) GHz frequency range. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT


    Original
    PDF MGA-24106 MGA-24106 AV02-2182EN

    201100A

    Abstract: dc to 3 ghz lna amplifier application circuits S1498 a 4514 v 112883 940462 260016 rf amplifier 10 ghz s1498 schematics power supply satellite receiver S1550
    Text: APPLICATION NOTE SKY65047-360LF Matching Circuits for Various Frequency Bands Introduction S-Parameter and Noise Parameter Data Skyworks SKY65047-360LF is a high linearity Low Noise Amplifier LNA with an operational frequency of 0.4 to 3.0 GHz. The device is manufactured with an advanced SiGe process and


    Original
    PDF SKY65047-360LF SKY65047-360LF 01100A 201100A dc to 3 ghz lna amplifier application circuits S1498 a 4514 v 112883 940462 260016 rf amplifier 10 ghz s1498 schematics power supply satellite receiver S1550

    sd 4842

    Abstract: MGA-24106 MAX 8997 MGA 24106 7158 7905 datasheet 9435 72 MAX 8774 datasheet mga 017 33262
    Text: MGA-24106 High-Gain, Low Current Low Noise Amplifier with Variable Current and Shutdown Function Data Sheet Description Features Avago Technologies’ MGA-24106 is a low-noise amplifier LNA designed for GPS/ISM/WiMAX applications in the (0.9-3.5) GHz frequency range. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT


    Original
    PDF MGA-24106 MGA-24106 AV02-2182EN sd 4842 MAX 8997 MGA 24106 7158 7905 datasheet 9435 72 MAX 8774 datasheet mga 017 33262

    MGA-445343-99

    Abstract: MMA445133-02 6 ghz amplifier 20w
    Text: MGA-445343-99 4.4 – 5.3 GHz 20W High Efficiency Linear Power Amplifier Preliminary Data Sheet Oct 2010 Features: • • • • • • • • 13 dB Gain 43 dBm P-3dB 35 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 20% Efficiency at 35 dBm Linear Output Power


    Original
    PDF MGA-445343-99 64QAM) MGA-445343-99 2N2907 IRF242 MMA445133-02 6 ghz amplifier 20w

    Untitled

    Abstract: No abstract text available
    Text: TGF4118-EPU 18 mm Discrete HFET 4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4118-EPU RF Performance at F = 2.3 GHz


    OCR Scan
    PDF TGF4118-EPU TGF4118-EPU

    Untitled

    Abstract: No abstract text available
    Text: TGF4124-EPU 4124 24 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 12 Watts at 2.3 GHz • Nominal PAE of 51.5% at 2.3 GHz • Nominal Gain of 10.8 dB at 2.3 GHz • Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz


    OCR Scan
    PDF TGF4124-EPU TGF4124-EPU

    RETU 3.02

    Abstract: OT363 K2280
    Text: S IE M E N S BGA425 S i - M M I C - A m p lif ie r in SIEGET 25-Technology Preliminary Data # Multifunctional Case. 50 Q Block LNA/MIX # Unconditionally stable # G a in [s ^ f^ S .S d B at 1.8 G H z (appl.1) G ain [Saif =22 d B at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z (VD=3V,lD=9.5mA)


    OCR Scan
    PDF BGA425 25-Technology Q62702-G0058 RETU 3.02 OT363 K2280