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    AO64 Search Results

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    AO64 Price and Stock

    Alpha & Omega Semiconductor AO6420

    MOSFET N-CH 60V 4.2A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AO6420 Reel 210,000 3,000
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    • 10000 $0.14
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    Quest Components AO6420 166
    • 1 $0.3234
    • 10 $0.3234
    • 100 $0.2156
    • 1000 $0.2156
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    AO6420 44
    • 1 $0.665
    • 10 $0.532
    • 100 $0.3325
    • 1000 $0.3325
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    TME AO6420 1,243 1
    • 1 $0.52
    • 10 $0.416
    • 100 $0.291
    • 1000 $0.166
    • 10000 $0.156
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    Win Source Electronics AO6420 33,000
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    • 1000 $0.145
    • 10000 $0.12
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    Alpha & Omega Semiconductor AO6405

    MOSFET P-CH 30V 5A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AO6405 Digi-Reel 30,570 1
    • 1 $0.6
    • 10 $0.369
    • 100 $0.6
    • 1000 $0.15916
    • 10000 $0.15916
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    AO6405 Cut Tape 30,570 1
    • 1 $0.6
    • 10 $0.369
    • 100 $0.6
    • 1000 $0.15916
    • 10000 $0.15916
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    AO6405 Reel 30,000 3,000
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    • 10000 $0.1355
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    TME AO6405 1,665 3
    • 1 -
    • 10 $0.338
    • 100 $0.155
    • 1000 $0.137
    • 10000 $0.122
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    ComSIT USA AO6405 6,000
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    Chip 1 Exchange AO6405 2,524
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    Win Source Electronics AO6405 475,000
    • 1 -
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    • 1000 $0.099
    • 10000 $0.066
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    Alpha & Omega Semiconductor AO6404

    MOSFET N-CH 20V 8.6A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AO6404 Reel 12,000 3,000
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    • 10000 $0.14586
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    Win Source Electronics AO6404 27,080
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    • 1000 $0.1522
    • 10000 $0.1304
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    Alpha & Omega Semiconductor AO6400

    MOSFET N-CH 30V 6.9A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AO6400 Digi-Reel 7,334 1
    • 1 $0.75
    • 10 $0.464
    • 100 $0.75
    • 1000 $0.2047
    • 10000 $0.2047
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    AO6400 Cut Tape 7,334 1
    • 1 $0.75
    • 10 $0.464
    • 100 $0.75
    • 1000 $0.2047
    • 10000 $0.2047
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    AO6400 Reel 3,000 3,000
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    • 10000 $0.15976
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    TME AO6400 59 3
    • 1 -
    • 10 $0.238
    • 100 $0.074
    • 1000 $0.067
    • 10000 $0.062
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    NexGen Digital AO6400 890
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    Alpha & Omega Semiconductor AO6409A

    MOSFET P-CH 20V 5.5A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AO6409A Cut Tape 5,594 1
    • 1 $0.71
    • 10 $0.442
    • 100 $0.71
    • 1000 $0.19392
    • 10000 $0.19392
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    AO6409A Digi-Reel 5,594 1
    • 1 $0.71
    • 10 $0.442
    • 100 $0.71
    • 1000 $0.19392
    • 10000 $0.19392
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    AO6409A Reel 3,000 3,000
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    • 10000 $0.15094
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    TME AO6409A 3
    • 1 -
    • 10 $0.249
    • 100 $0.117
    • 1000 $0.104
    • 10000 $0.094
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    Find more AO64 price and stock on Findchips.com

    AO64 Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO6400 Alpha & Omega Semiconductor General Purpose - 30V N-Channel MOSFET Original PDF
    AO6400 Unknown N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO6401 Alpha & Omega Semiconductor General Purpose - 30V P-Channel MOSFET (Replacement AO6401A) Original PDF
    AO6401 Alpha & Omega Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO6401A Alpha & Omega Semiconductor General Purpose - 30V P-Channel MOSFET Original PDF
    AO6401A Alpha & Omega Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO6401L Alpha & Omega Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO6402 Alpha & Omega Semiconductor General Purpose - 30V N-Channel MOSFET (Replacement AO6402A) Original PDF
    AO6402 Alpha & Omega Semiconductor FET Transistor, N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO6402 Alpha & Omega Semiconductor N-channel Enhancement Mode Field Effect Transistor Original PDF
    AO6402A Alpha & Omega Semiconductor General Purpose - 30V N-Channel MOSFET Original PDF
    AO6402L Alpha & Omega Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO6403 Alpha & Omega Semiconductor General Purpose - 30V P-Channel MOSFET Original PDF
    AO6403 Alpha & Omega Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO6403L Alpha & Omega Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO6404 Alpha & Omega Semiconductor Transistor Mosfet N-CH 20V 8.6A 6TSOP Original PDF
    AO6404L Alpha & Omega Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO6405 Alpha & Omega Semiconductor General Purpose - 30V P-Channel MOSFET Original PDF
    AO6405 Alpha & Omega Semiconductor FET Transistor, P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO6405L Alpha & Omega Semiconductor MOSFET, P-Channel Enhancement Mode Field Effect Transistor Original PDF

    AO64 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AO6409

    Abstract: 2A940
    Text: AO6409 20V P-Channel MOSFET General Description Product Summary The AO6409 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.


    Original     		AO6409 AO6409 2A940 PDF

    AO6401A

    Abstract: No abstract text available
    Text: AO6401A 30V P-Channel MOSFET General Description Product Summary The AO6401A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO6401A AO6401A PDF

    TSOP 54 land pattern

    Abstract: AO6405 TSOP-6 Marking land pattern for TSOP 2 86
    Text: Aug 2002 AO6405 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6405 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO6405 AO6405 TSOP 54 land pattern TSOP-6 Marking land pattern for TSOP 2 86 PDF

    AO6408

    Abstract: No abstract text available
    Text: March 2003 AO6408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6408 uses advanced trench technology to provide excellent RDS ON and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for


    Original     		AO6408 AO6408 PDF

    AO6420

    Abstract: No abstract text available
    Text: AO6420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6420 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6420 is Pb-free


    Original     		AO6420 AO6420 PDF

    AO6409

    Abstract: AO6409L
    Text: AO6409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6409 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a


    Original     		AO6409 AO6409 AO6409L PDF

    AO6405

    Abstract: AO6405L 676v
    Text: AO6405 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6405 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6405 is Pb-free


    Original     		AO6405 AO6405 AO6405L AO6405L 676v PDF

    AO6422

    Abstract: No abstract text available
    Text: AO6422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6422/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for general purpose application.


    Original     		AO6422 AO6422/L AO6422 AO6422L -AO6422L PDF

    AO6409AL

    Abstract: No abstract text available
    Text: AO6409AL P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AO6409AL uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable


    Original     		AO6409AL AO6409AL PDF

    AO6402AL

    Abstract: AO6402A V2732
    Text: AO6402A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6402A/L uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow


    Original     		AO6402A AO6402A/L AO6402A AO6402AL -AO6402AL V2732 PDF

    TSOP-6 marking 6A

    Abstract: AO6401 AO6400 land pattern for TSOP land pattern for TSOP input id TSOP-6 Marking
    Text: July 2001 AO6400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6400 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in


    Original     		AO6400 AO6400 AO6401 TSOP-6 marking 6A AO6401 land pattern for TSOP land pattern for TSOP input id TSOP-6 Marking PDF

    AO6407

    Abstract: DSA00304013 land pattern for TSOP 2 50 marking code 46 tsop marking code 46 tsop-6
    Text: January 2003 AO6407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6407 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original     		AO6407 AO6407 DSA00304013 land pattern for TSOP 2 50 marking code 46 tsop marking code 46 tsop-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO6404 20V N-Channel MOSFET General Description Product Summary The AO6404 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		AO6404 AO6404 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO6400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6400 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		AO6400 AO6400 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO6404 20V N-Channel MOSFET General Description Product Summary The AO6404 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		AO6404 AO6404 PDF

    AO6405

    Abstract: AO6405L
    Text: Rev 2: Nov 2004 AO6405, AO6405L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM


    Original     		AO6405, AO6405L AO6405 AO6405L PDF

    Untitled

    Abstract: No abstract text available
    Text: AO6424 30V N-Channel MOSFET General Description Product Summary The AO6424 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device may be used as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V 5A RDS(ON) (at VGS=10V)


    Original     		AO6424 AO6424 PDF

    AO6404

    Abstract: AO6404L
    Text: AO6404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6404 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		AO6404 AO6404 AO6404L PDF

    AO6414

    Abstract: diode rl104 AO6414L
    Text: AO6414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6414 uses advanced trench technology to provide excellent RDS ON and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load


    Original     		AO6414 AO6414 AO6414L diode rl104 PDF

    AO6401A

    Abstract: PF612
    Text: AO6401A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6401A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		AO6401A AO6401A PF612 PDF

    ao6424

    Abstract: No abstract text available
    Text: AO6424 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AO6424 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO6424 AO6424 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO6400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6400 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM


    Original     		AO6400 AO6400 AO6400L AO6400L PDF

    AO6409

    Abstract: No abstract text available
    Text: AO6409 20V P-Channel MOSFET General Description Product Summary The AO6409 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.


    Original     		AO6409 AO6409 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO6420 60V N-Channel MOSFET General Description Product Summary The AO6420 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 60V ID = 4.2A (VGS = 10V)


    Original     		AO6420 AO6420 PDF