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    Untitled

    Abstract: No abstract text available
    Text: HY62C256 HYUNDAI S EM IC O N D U C TO R 32KX8-KC CMOS SRAM M 231202B-APR91 FEATURES DESCRIPTION • High speed— 85/100/120/150 ns m ax. The HY62C256 is a high speed low power, 32,768 words by 8-bit CM OS static RAM fabri­ cated using HYUNDAI’S high performance


    OCR Scan     		HY62C256 32KX8-KC 231202B-APR91 HY62C256 PDF

    Untitled

    Abstract: No abstract text available
    Text: A J • ■ HY62256A H Y U N o n i m x M lt CMOS SRAM s e m ic o n d u c t o r M241201B-APR91 DESCRIPTION FEATURES The HY62256A is a high speed low power, 32,768 words by 8-bit CMOS static RAM fabricated using HYUNDAI’S high perfor­ m ance twin tub CM OS process. This high


    OCR Scan     		HY62256A M241201B-APR91 HY62256A PDF

    58256

    Abstract: 58256a
    Text: HYUNDAI V i SEMICONDUCTOR HYM58256A 256KX 8-Bit C M O S DRAM MODULE M461201A-APR91 DESCRIPTION FEATURES The HYM58256A is a 256K words by 8 bits dynamic RAM module and consists of Fast Page mode CMOS DRAMs of two HY534256J in 20/26 pin SOJ mounted on a 30 pin glassepoxy printed circuit board. 0.22|iF decoupling


    OCR Scan     		HYM58256A 256KX M461201A-APR91 HYM58256A HY534256J HYM58256AM HYM58256AP HYM58256A-60 HYM58256A-70 HYM58256A-80 58256 58256a PDF

    Altera ep310

    Abstract: No abstract text available
    Text: •JA HYUNDAI vi S EM IC O N D U C TO R H Y lfir V S 1 1 1 1 9 CMOS EEPLD L111202A— APR91 DESCRIPTION FEATURES The HY18CV8 is a CM OS Electrically Eras­ able Program mable Logic Device EEPLD that provides a high performance ; low power, reprogrammable and architecturally flexible


    OCR Scan     		L111202Aâ APR91 HY18CV8 HY18CV8 Altera ep310 PDF

    Untitled

    Abstract: No abstract text available
    Text: ,Aj Hyundai ' f i HY531000 S E M IC O N D U C T O R 1 1 S ™ , M171202A-APR91 DESCRIPTION The HY531000 is a high speed, low power 1,048,576X1 bit CM OS dynamic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY531000 offers a fast


    OCR Scan     		HY531000 M171202A-APR91 HY531000 576X1 PDF

    UAA 190

    Abstract: AC613 HY51C
    Text: A ] • ■ H H Y U N D A I SEMICONDUCTOR Y 5 1 C 1 0 0 0 iMxi-œt c m o s dram M131202B-APR91 DESCRIPTION FEATURES T he H Y 51C1000 is a high speed, low pow er 1,048,576X1 bit C M O S dynam ic random a c ­ cess m em ory. F abricated w ith the H Y U N D A I


    OCR Scan     		M131202B-APR91 HY51C1000 576X1 HY51C1000during HY51C UAA 190 AC613 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY6116A .V« *H Y UNDAI SEMICONDUCTOR M211201B-APR91 FEATURES DESCRIPTION The HY6116A is a high speed, low power, 2,048 words by 8-bit CM O S static RAM fabri­ cated using high performance CM OS process technology. This high reliability process cou­ pled with innovative circuit design techniques,


    OCR Scan     		HY6116A M211201B-APR91 HY6116A PDF

    Untitled

    Abstract: No abstract text available
    Text: •<H gJSÄSÄJI H Y M 5C 9256 256KX 9-Bit CMOS DRAM MODULE M421202A-APR91 DESCRIPTION The HYM5C9256 is a 256K words by 9 bits dynam ic RAM m odule and consists o f nine HY53C256LF Fast Page m ode CM OS DRAM s in 18 pin PLCC package mounted on a 30 pin glass-epoxy printed circuit board. 0.22pF de­


    OCR Scan     		256KX M421202A-APR91 HYM5C9256 HY53C256LF 5C9256M 5C9256P HYM5C9256 PDF

    534256

    Abstract: No abstract text available
    Text: , ¿ 4 M 'à HY534256 1 H y u n d a i SEM ICONDUCTOR M181202A-APR91 FEATURES DESCRIPTION • Low power dissipation - Operating current, 100ns : 60mA max. - TTL standby current : 2mA(max.) -CM OS standby current : 1mA(max.) • Read-Modify-Write capability


    OCR Scan     		HY534256 M181202A-APR91 100ns HY534256 534256 PDF

    CRL4

    Abstract: s8100
    Text: HYU N DA I E L E C T R O N I C S 3^E J> • Mb7SGflö G0003flfl 2 « H Y N K 1M X 8-Bit CMOS DRAM MODULI1?”. M431201B-APR91 DESCRIPTION FEATURES T c a - 2 . ?> tRAC tCAC tpc HYM581000-60 60 20 40 HYM S81000-70 70 20 40 H YM581000-80 80 20 45 HYM 581000-10


    OCR Scan     		G0003flfl M431201B-APR91 HYM581000 HY531000J HYM581000M HYM581000P HYM581000-60 S81000-70 YM581000-80 36l-- CRL4 s8100 PDF

    HYM591

    Abstract: HY531000J
    Text: HYUNDAI 3 TE ELECTRONICS D • 4 b 7 S 0 fifl 0 0 0 0 3 *1 0 S «HYN K P ^ '^ V 'O m m M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy­ namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin


    OCR Scan     		M431201A-APR91 HYM591000 HY531000J 22jiF HYM591000M HYM591000P HYM591000M/P-60 HYM591000M/P-70 HYM591000M/P-80 HYM591000M/P-10 HYM591 PDF

    hyundai tv hy 22 f circuit

    Abstract: c 144 ESS HYM5C9256
    Text: HYUNDAI ELECTRONICS 3TE D • >4b7SGñó G D G Ü 3 S Ö 4 ■ HYNK 256K*9-Bit CMOS DRAM MODÍIfc&’ M421202A-APR91 DESCRIPTION The HYM5C9256 is a 256K words by 9 bits dynamic RAM m odule and consists o f nine HY53C256LF Fast Page mode CM OS DRAM s in 18 pin PLCC package mounted on a 30 pin


    OCR Scan     		M421202A-APR91 HYM5C9256 HY53C256LF 22jiF HYM5C9256M HYM5C9256P HYM5C9256-70 HYM5C9256-80 HYM5C9256-10 HYM5C9256-12 hyundai tv hy 22 f circuit c 144 ESS PDF

    HY93C46

    Abstract: NMC9346
    Text: « Hyundai SEMICONDUCTOR M* , HY93C46 M311201B-APR91 DESCRIPTION FEATURES The HY93C46 is a 1,024-bit non-volatile mem­ ory organized as 64 registers o f 16 bits each. Data can be written into or read out serially by most microprocessors or microcontrollers.


    OCR Scan     		HY93C46 M311201B-APR91 HY93C46 024-bit 16-Bit NMC9346 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 • ■ H y u n d a i SEMICONDUCTOR H 5 3 C Y 2 5 6 256K.X i-Kt c m o s d r a m M111201A-APR91 DESCRIPTION FEATURES The HY53C256 is a high speed 262,144X1 bit CM OS dynamic random access memory. Fabricated with HYUNDAI CM OS techno­ logy, the HY53C256 offers a fast page mode for


    OCR Scan     		M111201A-APR91 HY53C256 144X1 HY53C256L, HY53C256L 100ns PDF

    HY6264 RAM

    Abstract: No abstract text available
    Text: HY6264 HYUNDAI • ■ SEMICONDUCTOR »k x 8« S ilS M 2212 0 1 B-APR91 DESCRIPTION FEATURES The HY6264 is a high speed, low power 8,192 words by 8-bit CM OS static RAM fabrica­ ted using high performance CM OS process te­ chnology. This high reliability process coupled


    OCR Scan     		HY6264 B-APR91 HY6264 HY6264 RAM PDF

    Untitled

    Abstract: No abstract text available
    Text: « ÏH IS ft! H 256KX8-HI Y M C5M OÇS DRAM 8 2MODULE 56 M 411202A-APR91 DESCRIPTION FEATURES The HYM5C8256 is a 256K words by 8 bits dynamic RAM m odule and consists of eight HY53C256LF Fast Page mode CMOS DRAM in 18 pin PLCC package mounted on a 30 pin glass-epoxy printed circuit board. 0.22|iF de­


    OCR Scan     		256KX8-HI 11202A-APR91 HYM5C8256 HY53C256LF HYM5C8256M HYM5C8256P PDF

    100PF

    Abstract: No abstract text available
    Text: ’< M « H y u n d a i SEMICONDUCTOR „ * HY93C46 M311201B-APR91 DESCRIPTION FEATURES The HY93C46 is a 1,024-bit non-volatile mem­ ory organized as 64 registers of 16 bits each. D ata can be written into or read out serially by most microprocessors or microcontrollers.


    OCR Scan     		HY93C46 M311201B-APR91 HY93C46 024-bit 100PF PDF

    Untitled

    Abstract: No abstract text available
    Text: HY93C46 •HYUNDAI SEMICONDUCTOR 64 X 16-Bit CM OS SERIAL EE PROM M311201B-APR91 DESCRIPTION FEATURES The HY93C46 is a 1,024-bit non-volatile mem­ ory organized as 64 registers o f 16 bits each. D ata can be written into or read out serially by most microprocessors or microcontrollers.


    OCR Scan     		HY93C46 024-bit 16-Bit HY93C46 PACKAGE-300 PDF

    HY6116A-10

    Abstract: HY6116A
    Text: D HY UN DA I E L E C T R O N I C S • 4b7S0flfl Q Q D Q 4 Q T b ■ HYNK M211201B-APR91 DESCRIPTION FEATURES The HY6116A is a high speed, low power, 2,048 words by 8-bit CM O S static RAM fabri­ cated using high performance CM OS process technology. This high reliability process cou­


    OCR Scan     		M211201B-APR91 HY6116A 500mV OQGG414 T-46-23-12 HY6116A-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Hyundai SEM IC O N D U C TO R HYM591000 im x9-bíí cmos dram module M431201A-APR91 DESCRIPTION FEATURES The HYM591000 is a 1M words by 9 bits dy­ namic RAM module and consists of nine HY531000J Fast Page mode CMOS DRAM in 20/26 pin SOJ package mounted on a 30 pin


    OCR Scan     		HYM591000 M431201A-APR91 HYM591000 HY531000J HYM591000M HYM591000P HYM591000M/P-60 HYM591000M/P-70 HYM591000M/P-80 PDF

    Untitled

    Abstract: No abstract text available
    Text: M HY51C1000 HYUNDAI • ■ SEMICONDUCTOR îvixi-Bit t\io s dram M131202B-APR91 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CMOS dynamic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast


    OCR Scan     		HY51C1000 M131202B-APR91 HY51C1000 576X1 PDF

    Untitled

    Abstract: No abstract text available
    Text: « }J • ■ ^ ,c uo ,ndudctao Ì SEMICONDUCTOR H Y im 5 8 1 0 0 0 M x8 -K t c m o s d r a m m o d u l e M431201B-APR91 DESCRIPTION The HYM581000 is a 1M words by 8 bits dy­ namic RAM module and consists of eight HY531000J Fast Page mode CM OS DRAM in 20/26 pin SOJ package m ounted on a 30 pin


    OCR Scan     		431201B-APR91 HYM581000 HY531000J HYM581000M HYM581000P HYM581000 PDF

    Untitled

    Abstract: No abstract text available
    Text: DWG NO. DO NOT DIMENSIONS REQ. PER ASSY 19,8 ITEM TRIC SCALE IN mm. 3rd ANGLE PROJECTION MATERIAL DESCRIPTION FINISH 4,3 *0,2 DIA. y CORTE A-A CORTE B-B SECTI ON SECTI ON <Â\ - RE30BINAR ¡NT£3CALA.':D0 COM PAPEL- R E E L I N G WI T H PAPHR-INTERLEÀVE.


    OCR Scan     		PP-94 PDF

    LH5160N

    Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55
    Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.


    OCR Scan     		LH5912 LH5914are LH5911 LH5914 /IDT7134 16Kx18 64Kx18 LH5160N LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55 PDF