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    HY51C Price and Stock

    SK Hynix Inc HY51C64L-15

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HY51C64L-15 225 1
    • 1 $8.775
    • 10 $6.5813
    • 100 $5.265
    • 1000 $5.0456
    • 10000 $5.0456
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    HY51C64L-15 90
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    Quest Components HY51C64L-15 180
    • 1 $11.7
    • 10 $11.7
    • 100 $7.3125
    • 1000 $7.02
    • 10000 $7.02
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    Others HY51C466LS-12

    51C466LS-12
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY51C466LS-12 1,512
    • 1 $1
    • 10 $1
    • 100 $1
    • 1000 $1
    • 10000 $1
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    SK Hynix Inc HY51C466S-12

    51C466S-12
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    Quest Components HY51C466S-12 646
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    SK Hynix Inc HY51C4256S-12

    IC,DRAM,FAST PAGE,256KX4,CMOS,DIP,20PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY51C4256S-12 144
    • 1 $15
    • 10 $15
    • 100 $6
    • 1000 $6
    • 10000 $6
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    SK Hynix Inc HY51C1000LS-12

    IC,DRAM,FAST PAGE,1MX1,CMOS,DIP,18PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY51C1000LS-12 102
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    Find more HY51C price and stock on Findchips.com

    HY51C Datasheets (57)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY51C1000-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY51C1000-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY51C1000-85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY51C1000J-10 Hyundai 1,048,576 x 1-Bit CMOS DRAM Scan PDF
    HY51C1000J-12 Hyundai 1,048,576 x 1-Bit CMOS DRAM Scan PDF
    HY51C1000J-80 Hyundai 1,048,576 x 1-Bit CMOS DRAM Scan PDF
    HY51C1000L-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY51C1000L-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY51C1000L-85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY51C1000S-10 Hyundai 1,048,576 x 1-Bit CMOS DRAM Scan PDF
    HY51C1000S-12 Hyundai 1,048,576 x 1-Bit CMOS DRAM Scan PDF
    HY51C1000S-80 Hyundai 1,048,576 x 1-Bit CMOS DRAM Scan PDF
    HY51C1002-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY51C1002-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY51C1002-85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY51C1002L-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY51C1002L-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY51C1002L-85 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY51C256-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY51C256-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    HY51C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    64kx4

    Abstract: HY51C264-12 strobe w24 64Kx4-Bit
    Text: ▲ HY51C264 64K x4-Bit Dual Port CMOS RAM HYUNDAI SEMICONDUCTOR OCTOBER 1986 DESCRIPTION The Hyundai HY51C264 is high-speed, dual access 262, 144 bit 256K CMOS dynamic random-access memory components. Fabricated with CMOS technology, the HY51C264 offers TURBOMODE


    OCR Scan     		PDF HY51C264 64Kx4-Bit HY51C264 64Kx4) K29793/4 K23955/7 OJ06-10/86 64kx4 HY51C264-12 strobe w24

    hyundai

    Abstract: 536X4
    Text: PRELIMINARY A HY51C464 HYUNDAI SEMICONDUCTOR 65,536x4-Bit CMOS Dynamic RAM AUGUST 1986 The HY51C464 offers a maximum standby current of 100 n A when RASs Vdd—0.5V. During standby i.e. refresh only cycles , the refresh period can be extended to 32 ms to reduce the total current re­


    OCR Scan     		PDF 536x4-Bit HY51C464 HY51C464 K29793/4 K23955/7 hyundai 536X4

    TPC 8406

    Abstract: HY51C1000-12 HY51C1000-10 RM1410 W777777 29793 83464 hyundai chip id
    Text: HYUNDÛJ HY51C1000 S E M IC Ü N Ü U U T Ü K lM X 1-Bit CMOS DRAM M131202A-SEP90 DESCRIPTION FEATURES T h e H Y 51C1000 is a high speed, low pow er 1,048,576X1 bit C M O S dynam ic ran d o m a c ­ cess m em ory. F ab rica ted w ith th e H Y U N D A I C M O S process, th e H Y 51C 1000 offers a fast


    OCR Scan     		PDF HY51C1000 M131202A-SEP90 HY51C1000 576X1 002-A K29793/4 K23955/6 TPC 8406 HY51C1000-12 HY51C1000-10 RM1410 W777777 29793 83464 hyundai chip id

    HYUNDAI i10

    Abstract: No abstract text available
    Text: PRELIMINARY HY51C464 HYUNDAI SEMICONDUCTOR 6 5 ,5 3 6 x4-Bit CMOS D ynam ic RAM AUGUST 1986 Oov,cd- The HY51C464 offers a m axim um standby current of 100 ft A w hen RAS ? Vdd—0.5V. During standby i.e. refresh only cycles , the refresh period can be extended to 32 ms to reduce the total current re­


    OCR Scan     		PDF HY51C464 536x4-Bit HY51C464 K29793/4 K23955/7 DS11-08/86 HYUNDAI i10

    Untitled

    Abstract: No abstract text available
    Text: A £ SEMICONDUCTOR & & Ë g ! H Y 5 lMxi-Bit 1 C 1cmos 0 0dram M131202A-SEP90 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CM OS dynam ic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast


    OCR Scan     		PDF M131202A HY51C1000 576X1 K29793/4 K23955/6

    HY51C4256

    Abstract: block diagram of vu meter HY51C4254-10
    Text: M• ■ HY51C4256 R Hyundai SEMICONDUCTOR A M151201B—APR91 DESCRIPTION FEATURES The HY51C4256 is a high speed, low power 262,144 X 4 CM OS dynamic random access memory. Fabricated with HYUNDAI CMOS technology, HY51C4256 offers a fast page m ode for high data bandw idth, fast usable


    OCR Scan     		PDF HY51C4256 256KX4-Bit M151201Bâ APR91 S1C4256 block diagram of vu meter HY51C4254-10

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY / a m h v u n d a i SEMICONDUCTOR HY51C4256/L X DESCRIPTION T h e H Y 5 1 C 4 2 5 6 /L is a h ig h sp eed , low pow er 2 6 2 ,1 4 4 x 4 C M O S d y n a m ic ra n d o m access m em ory. F a b ric a te d w ith H Y U N D A I C M O S tech n o lo g y , H Y 5 1 C 4 2 5 6 /L o ffe rs a fa st p ag e


    OCR Scan     		PDF HY51C4256/L HY51C4256/L

    hy51c4256

    Abstract: HY51C4256-10 51c4256 soj16 51C4 HY51C4256-12
    Text: „ H H « y u n d a HY51C4256 i SEMICONDUCTOR A A A M151201B—APR91 DESCRIPTION FEATURES The HY51C4256 is a high speed, low power 262,144 X 4 CMOS dynamic random access memory. Fabricated with HYUNDAI CMOS technology, HY51C4256 offers a fast page mode for high data bandwidth, fast usable


    OCR Scan     		PDF HY51C4256 M151201B--APR91 HY51C4256 51C4256 HY51C4256-10 soj16 51C4 HY51C4256-12

    HY51C64-12

    Abstract: DYNAMIC RAM 65536 HY51C64L-12 e1986
    Text: s - n o o 0 0 1 8 9 1 m / SEMICONDUCTOR DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynam ic Random Access M emory. Fabricated in CM OS technology, the HY51C64 offers features not provided by NM OS technology-Ripplem ode* fast usable speed, low power, and an average soft error


    OCR Scan     		PDF HY51C64 HY51C64 150ns K29793/4 K23955/7 DS02-02/86 HY51C64-12 DYNAMIC RAM 65536 HY51C64L-12 e1986

    4b23

    Abstract: HY51C256 hyundai 235 moo 42j
    Text: HYUNDAI ELECT RO NI CS Û3 Ü>ËJ 4b750ññ ODDQISI *4 | ~ 467 508 8 HYUNDAI ELEC TR ON ICS 83D 00151 D T-M cr23>-|5 O C TO B ER 1986 D ESC R IPTIO N , The HY51C256L offers a typical standby current as low as 10// A w hen RAS Vdd—0.2V. During stand­ by (i.e. only refresh cycles the refresh period can


    OCR Scan     		PDF 4b750Ã HY51C256/L 144x1-bit HY51C256X 100ns 120ns 150ns 200ns 300MIL 4b23 HY51C256 hyundai 235 moo 42j

    Untitled

    Abstract: No abstract text available
    Text: M HY51C1000 HYUNDAI • ■ SEMICONDUCTOR îvixi-Bit t\io s dram M131202B-APR91 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CMOS dynamic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast


    OCR Scan     		PDF HY51C1000 M131202B-APR91 HY51C1000 576X1

    Untitled

    Abstract: No abstract text available
    Text: HY51C264 HYUNDAI ▲ SEMICONDUCTOR 64K x4-B it Dual Port CMOS RAM OCTOBER 1986 DESCRIPTION FEATURES The Hyundai HY51C264 is high-speed, dual access 262, 144 bit 256K CMOS dynamic random-access memory components. Fabricated with CMOS technology, the HY51C264 offers TURBOMODE


    OCR Scan     		PDF HY51C264 HY51C264 64Kx4) K23955/7 OJ06-10/86

    Untitled

    Abstract: No abstract text available
    Text: s -n o y 0 0 1 8 9 1 tfY i ^ j& P R E L IM IN A R Y f t SEMICONDUCTOR HY51C64 65,536X1-Bit CMOS Dynamic RAM FEBRUARY 1986 DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynamic Random Access Memory. Fabricated in CMOS technology, the HY51C64 offers features not


    OCR Scan     		PDF HY51C64 536X1-Bit HY51C64 16-pin 100ns 120ns 150ns K29793/4

    16PIN

    Abstract: 51C64H-12 51C64H-8 51C64HL-12 51C64L-12 51C65L-10 51C65L-12 HY51C64-10 HY51C64-12 HY51C64-15
    Text: - 172 — 64K A • m m m % it £ OC TRCY TCAD TAH TRAC max n s) ■ in (n s) CMOS Dynamic 4 7 f y / U f t ■ in (n s) ■in (n s) TP ■ in (n s) TWCY (n s) RAM(65536x1) m « TC'H ■in (n s) TfiWC n in (n s) VDD o r VCC (V) IDD nax (aA) À ID D STANDBY


    OCR Scan     		PDF 65536x1) 16PIN 51CB4H-10 51C64H-12 51C64H-8 51CB4HL-1D HY5164-15 V51C64-10 V51C64-12 V51C64-15 51C64HL-12 51C64L-12 51C65L-10 51C65L-12 HY51C64-10 HY51C64-12 HY51C64-15

    UAA 190

    Abstract: AC613 HY51C
    Text: A ] • ■ H H Y U N D A I SEMICONDUCTOR Y 5 1 C 1 0 0 0 iMxi-œt c m o s dram M131202B-APR91 DESCRIPTION FEATURES T he H Y 51C1000 is a high speed, low pow er 1,048,576X1 bit C M O S dynam ic random a c ­ cess m em ory. F abricated w ith the H Y U N D A I


    OCR Scan     		PDF M131202B-APR91 HY51C1000 576X1 HY51C1000during HY51C UAA 190 AC613

    m514256

    Abstract: m514256a M514256AP hy51c4256 HY51C4256-10 20PIN AAA1M104-12 AAA1M204-07 AAA1M204-08 EDI44256C-120
    Text: - 211 IM CMOS X D y n a m i c 4 •; * RA M 2 6 21 4 4 x 4 > 7 ft ü m iäSicH m ä tt £ CC) TRAC max (ns) TRCY rain (ns) TCAD min (ns) TAH nin (ns) TP min (ns) TWCY min (ns) TDH min (ns) TRWC min (ns) V D D or V C C (V) 2 0 P I N A m I DD max (mA) I DD STANDBY


    OCR Scan     		PDF 20PIN AM1M104-10 AAA1M104-12 HY51C4256L-85 HY51C4258-10 HY51C4258-12 51C4258-85 HY51C4258L-10 m514256 m514256a M514256AP hy51c4256 HY51C4256-10 AAA1M204-07 AAA1M204-08 EDI44256C-120

    y51c

    Abstract: l1048 TA512
    Text: PRELIMINARY J ^ H SEMICONDUCTOR VUNOQJ H Y 5 1M1x uCm 1C M 0O S D0y n a2m jc/r aLm DESCRIPTION FEATURES T h e H Y 5 1 C 1 0 0 2 /L is h ig h sp e ed , low pow er 1,048,576 x 1 bit C M O S d y n a m ic ra n d o m access m em ory. F ab ricated w ith th e H Y U N D A I C M O S


    OCR Scan     		PDF HY51C1002L HY51C1002/L-H5 HY51C10O2/UO 51C1602/U2 y51c l1048 TA512

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY ▲ £ £ £ £ & H Y 5256K 1 xÇ4-Bit4CMOS 2 5Dynamic 8 /RAM L DESCRIPTION FEATURES T h e H Y 5 1 C 4 2 5 8 /L is a h ig h speed, low pow er 2 6 2 ,1 4 4 x 4 C M O S d y n a m ic ra n d o m access m em ory. F a b ric a te d w ith H Y U N D A I C M O S


    OCR Scan     		PDF 5256K HY51C4258L

    HY51C256-12

    Abstract: 51c256 GM71C256-80 GM71C256-10 GoldStar 51C256H-12 51C256H-20 51C256HL-15 51C256HL-20 51C256L-15
    Text: - 256K m & ít £ * fc> TRAC max ns TRCY min (ns) CMOS D y n a m ic 'i -y ^ y y n\i TCAD »in (ns) TAH TP nin (ns) •in (ns) TWCY nin (ns) R A M (2 6 2 1 4 4 x 1) M m TDH TRWC ■in (ns) ain (ns) V D D or V C C (V) I DD max (b A) 16 P I N A ( VIL ■ax


    OCR Scan     		PDF 16P1N 51C256H-12 51C25SH-1S 51C256H-20 HY51C256-12 HY51C256-15 HY51C25B-20 HY51CZ56L-10 HY51C25SL-12 HY51C256L-15 51c256 GM71C256-80 GM71C256-10 GoldStar 51C256HL-15 51C256HL-20 51C256L-15

    HY51C1002-10

    Abstract: km41c1000c-6 HY531000-60 511000 HM511002-10 HM511002-12 HM511002-15 HM511002P-12 HM511002P-15 HM571000JP-35R
    Text: - 202 - IM CMOS X m £ í± £ iä g iE ia PC TRAC max ns) TRCY min (ns) D y n a m i c RAM (10 4 85 7 6 X 1 ) 4 V f - y 7 ’ ft fé TCAD T A H T P min ! min min (ns) (ns) i (ns¡ TWCY min (ns) M TDH nin (ns) TRWC V D D or VC C (ns) (V) 18 P I N IDD max


    OCR Scan     		PDF 511001P-1S HM511002-10 HM511002-12 HM51100 KSM1C1002P-10 KM41C1002P-12 KM41C1000C-6 KM41C1000C-7 1000C-8 HY51C1002-10 HY531000-60 511000 HM511002-15 HM511002P-12 HM511002P-15 HM571000JP-35R