APT5027
Abstract: APT5027CLL
Text: APT5027CLL 500V 16A 0.270Ω POWER MOS 7 R MOSFET TO-254 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT5027CLL
O-254
O-254
APT5027
APT5027
APT5027CLL
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Untitled
Abstract: No abstract text available
Text: O A dvanced P ow er T e c h n o lo g y 9 D APT5027SNR Os POWER MOS IV 500V 20.0A 0.27U AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D A ll R a tin g s: T c = 2 5 °C u n le ss o th e rw ise sp e cifie d .
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APT5027SNR
100mS
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APT5027BVR
Abstract: No abstract text available
Text: APT5027BVR r A D VA N C ED • W A P o w er M Te c h n o lo g y * soov 2oa 0.270Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT5027BVR
O-247
100Wjis)
MIL-STD-750
O-247AD
APT5027BVR
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5027bnr
Abstract: 5027B
Text: A d v a n ced P o w er Te c h n o l o g y 8 O D O APT5027BNR 500V 20.0A 0.27U S POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS ^DSS A v D ra in -S o u rc e V o lta g e 'd 6 C o n tin u o u s D ra in C u rre n t @ T c - 2 5 °C
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APT5027BNR
5027B
APT5027BNR
5027bnr
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1DOA
Abstract: 0270A
Text: APT5027SVR A DVAN CED P o w er Te c h n o lo g y ' soov 20A 0.270a POWER MOSV Power M O S V™ is a new generation of high voltage N-Channe! enhancement mode power M O S FETs. This new technology minimizes the JF E T effect, increases packing density and reduces the on-resistance. Power M O S V™
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APT5027SVR
1DOA
0270A
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Untitled
Abstract: No abstract text available
Text: • r advanced W .^A P o w er Te c h n o lo g y ' APT5027SVR soov 2oa 0.270Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT5027SVR
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: A O D d v a n c e d P ow er T e c h n o lo g y ' APT5027BNR O s POWER MOS IV 500V 20.0A 0.270 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS Symbol All Ratings: T c = 2 5 °C unless otherwise specified. Parameter APT5027BNR
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APT5027BNR
O-247AD
100mS
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y O D APT5027BNR 500V 20.0A 0.27Í2 O s W»'vvtR MOS m AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS •d All Ratings: Tc = 25°C unless otherwise specified. Parameter
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APT5027BNR
O-247AD
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APT5027BVR
Abstract: 500V20A APT5027
Text: APT5027BVR ADVANCED W ZA P o w e r Te c h n o l o g y 500V 20A 0.270Í2 POWER MOS V Power M O S V is a new generation of high voltage N-Channel enhancement mode power M O SFE Ts. This new technology minimizes the J F E T effect, increases packing density and reduces the on-resistance. Power M OS V
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APT5027BVR
O-247
MIL-STD-750
O-247AD
APT5027BVR
500V20A
APT5027
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T5027S
Abstract: 80AMPS
Text: O A d v a n ced P o w er Te c h n o l o g y D APT5027SNR O s 3* WER MOS ÍT® 500 V 20.0A 0.27a AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS Sym bol ^DSS A ll R a tin g s : T c = 2 5 ‘ C u n le s s o th e rw is e s p e c ifie d .
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APT5027SNR
T5027S
80AMPS
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APT5027BNR
Abstract: APT5027
Text: s o D 6 s A d v a n ced P o w er Te c h n o l o g y • APT5027BNR 500V 20.0A 0.27Q TOWER MOS IV^ AVALANCHE RATED N -C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified. Parameter
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APT5027BNR
O-247AD
APT5027
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APT*1002R4BN
Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Text: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0
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O-247
APT1001RBN
APT1001R1BN
APT1001RBNR
APT1001R1BNR
APT1001R3BN
APT1001R6BN
APT1002RBN
APT1002R4BN
APT1002RBNR
APT*1002R4BN
APT5040BNF
FREDFET
APT802R4BN
APT5020BNR
APT5085BN
APT5020BNF
APT5025BN
APT6040BNR
APT5085BNF
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Untitled
Abstract: No abstract text available
Text: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =
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APT4020BNR
APT4025BNR
APT4030BNR
APT4040BNR
APT4065BNR
APT4080BNR
APT5020BNR
APT5022BNR
APT5025BNR
APT5027BNR
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nt 6600 G
Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700
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APT1201R6BVR
APT1201R5BVR
APT1001RBVR
APT10086BVR
APT8075BVR
APT8065BVR
APT8056BVR
APT6040BVR
APT6035BVR
APT6030BVR
nt 6600 G
APT60M75JVR
APT30M40JVR
APT20M45B
APT50M50JVR
apt12080jvr
130-131
apt5014lvr
APT5020BVFR
apt40m70jvr
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C085
Abstract: APT5027BN T35 diode
Text: ADVANCED PO WER TECHNOLOGY b lE D • Q 5 S 7 [l G [ì □GGD740 123 MAVP A d van ced P o w er Te c h n o l o g y 0 A P T 5 0 2 7 B N 5 0 0 V 2 2 .0 A 0 .2 7 ÌÌ POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol
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GGD740
APT5027BN
Q0GG742
APT5027BN
O-247AD
C085
T35 diode
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APT802R4KN
Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Text: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN
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APT4016BN
APT4018BN
APT41I20BN
APT4025BN
APT4030BN
APT4040BN
APT5020BN
APT5022BN
APT5025BN
APT5040BN
APT802R4KN
APT6018LNR
APT6060BN
mosfet selector guide
APT-6018
APT10M25bnfr
k 3530 MOSFET
1r3b
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