by118
Abstract: No abstract text available
Text: CY8C23433, CY8C23533 PSoC Mixed-Signal Aray Features • ■ Powerful Harvard Architecture Processor ❐ M8C processor speeds to 24 MHz ❐ 8x8 multiply, 32-bit accumulate ❐ Low power at high speed ❐ 3.0 to 5.25V operating voltage ❐ Industrial temperature range: -40°C to +85°C
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CY8C23433,
CY8C23533
32-bit
14-bit
by118
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PDF
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AT17C512-10PI
Abstract: ATMEL Application Note EEPROM SOIC TCDF ATMEL 940 Atmel 826 lv512 AT17LV010-10JI AT17 AT40K ATDH2200E
Text: Features • EE Programmable 524,288 x 1- and 1,048,576 x 1-bit Serial Memories Designed to Store Configuration Programs for Field Programmable Gate Arrays FPGAs • In-System Programmable via 2-wire Bus • Simple Interface to SRAM FPGAs • Compatible with Atmel AT6000, AT40K FPGAs, Altera FLEX Devices, Lucent ORCA®
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Original
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AT6000,
AT40K
XC3000,
XC4000,
XC5200,
AT24CXXX
0944D
06/01//xM
AT17C512-10PI
ATMEL Application Note EEPROM SOIC
TCDF
ATMEL 940
Atmel 826
lv512
AT17LV010-10JI
AT17
ATDH2200E
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PDF
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SRAM sheet samsung
Abstract: No abstract text available
Text: Preliminary K7H163654A 512Kx36 DDR CIO b4 SRAM Document Title 512Kx36-bit DDR CIO b4 SRAM Revision History Rev. No. 0.0 History Draft Date 1. Initial document. 2. Add Icc & Isb November, 25 2001 March,25 2002 Remark Preliminary Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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K7H163654A
512Kx36
512Kx36-bit
512Klock
11x15
SRAM sheet samsung
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PDF
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K7H163654A-FC20
Abstract: K7H163654A-FC25 K7H163654A-FC30
Text: K7H163654A 512Kx36 DDR CIO b4 SRAM Document Title 512Kx36-bit DDR CIO b4 SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. 2. Add Icc & Isb November, 25 2001 March,25 2002 Preliminary Preliminary 1.0 1. Final SPEC release 2. Modify thermal resistance
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Original
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K7H163654A
512Kx36
512Kx36-bit
11x15
K7H163654A-FC20
K7H163654A-FC25
K7H163654A-FC30
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary K7H163654A 512Kx36 DDR CIO b4 SRAM Document Title 512Kx36-bit DDR CIO b4 SRAM Revision History Rev. No. 0.0 History Draft Date 1. Initial document. November, 25 2001 Remark Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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Original
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K7H163654A
512Kx36-bit
512Kx36
11x15
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PDF
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IR 10D 8A
Abstract: No abstract text available
Text: K7Q163652A K7Q161852A 512Kx36 & 1Mx18 Preliminary b2 SRAM QDRTM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. April, 30, 2001 Advance 0.1 1. Amendment 1 Page 3,4 PIN NAME DESCRIPTION W 4A) : from Read Control Pin to Write Control
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Original
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K7Q163652A
K7Q161852A
512Kx36-bit,
1Mx18-bit
512Kx36
1Mx18
IR 10D 8A
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PDF
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K7Q161882A
Abstract: K7Q161882A-FC10 K7Q161882A-FC13 K7Q161882A-FC15 K7Q163682A K7Q163682A-FC10 K7Q163682A-FC13 K7Q163682A-FC15 din 6p IR 10D 9F
Text: K7Q163682A K7Q161882A 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. May, 22 2001 Advance 0.1 1. Icc, Isb addition 2. 1.8V Vddq addition 3. Speed bin change
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Original
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K7Q163682A
K7Q161882A
512Kx36
1Mx18
512Kx36-bit,
1Mx18-bit
K7Q161882A
K7Q161882A-FC10
K7Q161882A-FC13
K7Q161882A-FC15
K7Q163682A
K7Q163682A-FC10
K7Q163682A-FC13
K7Q163682A-FC15
din 6p
IR 10D 9F
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PDF
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K7Q161862B-EC16
Abstract: ntram
Text: K7Q163662B K7Q161862B 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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Original
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K7Q163662B
K7Q161862B
512Kx36-bit,
1Mx18-bit
512Kx36
1Mx18
K7Q161862B-EC16
ntram
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PDF
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Untitled
Abstract: No abstract text available
Text: K7Q323652M K7Q321852M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September 5, 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA
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Original
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K7Q323652M
K7Q321852M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
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PDF
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K7Q161852A
Abstract: K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16
Text: K7Q163652A K7Q161852A 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. April, 30, 2001 Advance 0.1 1. Amendment 1 Page 3,4 PIN NAME DESCRIPTION W 4A) : from Read Control Pin to Write Control
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Original
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K7Q163652A
K7Q161852A
512Kx36
1Mx18
512Kx36-bit,
1Mx18-bit
K7Q161852A
K7Q161852A-FC10
K7Q161852A-FC13
K7Q161852A-FC16
K7Q163652A
K7Q163652A-FC10
K7Q163652A-FC13
K7Q163652A-FC16
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PDF
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K7Q161864B-FC16
Abstract: D0-35 K7Q161864B K7Q163664B K7Q163664B-FC16
Text: K7Q163664B K7Q161864B 512Kx36 & 1Mx18 QDRTM b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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Original
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K7Q163664B
K7Q161864B
512Kx36
1Mx18
512Kx36-bit,
1Mx18-bit
K7Q161864B-FC16
D0-35
K7Q161864B
K7Q163664B
K7Q163664B-FC16
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PDF
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Untitled
Abstract: No abstract text available
Text: K7Q323684M K7Q321884M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September 5, 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.
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Original
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K7Q323684M
K7Q321884M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
K7Q3236
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.
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Original
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K7Q323682M
K7Q321882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K7Q163664B K7Q161864B 512Kx36 & 1Mx18 QDRTM b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final 1.1 1. Added the Part no. of Pb Free Package on page.2
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Original
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K7Q163664B
K7Q161864B
512Kx36-bit,
1Mx18-bit
512Kx36
1Mx18
K7Q1636lid
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: K7Q323654M K7Q321854M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep. 5, 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA
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Original
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K7Q323654M
K7Q321854M
1Mx36-bit,
2Mx18-bit
1Mx36
2Mx18
-20part
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.
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Original
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K7Q323682M
K7Q321882M
1Mx36-bit,
2Mx18-bit
1Mx36
2Mx18
-20part
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K7Q323654M K7Q321854M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September 5, 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA
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Original
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K7Q323654M
K7Q321854M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
|
PDF
|
IR 10D 8A
Abstract: K7Q163682A-FC10
Text: K7Q163682A K7Q161882A 512Kx36 & 1Mx18 Preliminary b2 SRAM QDRTM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. May, 22 2001 Advance 0.1 1. Icc, Isb addition 2. 1.8V Vddq addition 3. Speed bin change
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Original
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K7Q163682A
K7Q161882A
512Kx36-bit,
1Mx18-bit
512Kx36
1Mx18
IR 10D 8A
K7Q163682A-FC10
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PDF
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EI 33
Abstract: Raytheon Company High Flow With Cooling Ring UP 8500 W ML-7479A 3,3 kw MHz relay industrial tube company ei-33 d
Text: The Machiett Laboratories, Inc. 1063 Hope Street • Stamford, Conn. 06907 IS S U E D 4-68 Tel. 203-348-7511 • TW X 710-474-1744 m M <&CHLÈT£> G e n e ra l Purpose Triode 55 kW CW D E S C R IP T IO N The M L-7479A is a general-purpose vapor-cooled triode
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OCR Scan
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ML-7479A
P-512126,
ST-2261
EI 33
Raytheon Company
High Flow With Cooling Ring UP 8500 W
3,3 kw MHz relay
industrial tube company
ei-33 d
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PDF
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photodiode application luxmeter
Abstract: IS306 light to voltage converter from luxmeter LM733N AD757 Diode IS1588 KPDC0021EA s4751 rca 555 application luxmeter
Text: Application Circuit Examples Low noise light-sensitive preamplifier -M 5 V Used in receivers for spatial light transm ission and optical rem ote control. A reverse bias is applied to the photodiode to improve frequency response. This circuit can also be used for interface to an am plifier with a low input resistance.
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OCR Scan
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AD549,
AD757,
PA620
LF357,
LF356,
LH0032,
LF442,
HA2625
A3130
photodiode application luxmeter
IS306
light to voltage converter from luxmeter
LM733N
AD757
Diode IS1588
KPDC0021EA
s4751
rca 555
application luxmeter
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PDF
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RJMG16XXX8XX1XX
Abstract: 0-KN-21 RJMG16XXX 2t512 NE045
Text: I _ A_ I_ _ _ _ _ _ _ _ _ CUSTOMER DRAWING T K a d a e u m e n t ia t h a prop e rty a f A m p h « n o l C a rp a ro tio n a n d Ta dtt4iV*rod a n ih a c x p r n a s candrtÎDn that it b not ta b e dia clo se d , rn p ra d u co d o r ucfid, in w holû o r In port, fo r m a n u fa c t u ra n r so la h y a n y o n a o t h e r th a n
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OCR Scan
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NE--046
MIL-STD-1344A
RJMG16XXXXXX1XX
RJMG16XXX8XX1XX
0-KN-21
RJMG16XXX
2t512
NE045
|
PDF
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lm733
Abstract: light to voltage converter from luxmeter photodiode application luxmeter LM733P
Text: Application Circuit Examples 1 Low noise light-sensitive preamplifier Used in receivers for spatial light transm ission and optical remote control. A reverse bias is applied to the photodiode to improve frequency response. This circuit can also be used for interface to an am plifier with a low input resistance.
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OCR Scan
|
AD549,
755N/P,
PA111,
OPA128,
OPA620,
OPA633,
LF357,
LF356,
LF442,
HA2625,
lm733
light to voltage converter from luxmeter
photodiode application luxmeter
LM733P
|
PDF
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diode B14A
Abstract: B14A B14A diode crystal diode if6 hall hall o4E DIODO LK diodo FAG 50 FAG 50 diode FAG 32 diode
Text: MIL SPECS IC|D00D15S 0D00L.S2 S | « 1^ - 19500/91 31^ A»eod»cnt 1 1 M y i960 KXLITARI STFEUFICATIO SDdCOOTWCTOT DEVICE DIODE, SILICOTI, POWER RECTIFUR TXTE W2153 Thla Ancndment forme a part of Military ' Specification KIL-S-19500/9HS1kC j, 2 No t 59 Page 1, paragraph 1.1 table., (l (surge) column: Delete "50" pertaining to
|
OCR Scan
|
0000bS2
KIL-S-195O0/9l
1JJ2I53
KIL-S-19500/91
N2I53
diode B14A
B14A
B14A diode
crystal diode
if6 hall
hall o4E
DIODO LK
diodo FAG 50
FAG 50 diode
FAG 32 diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 24FC32 M icrochip 32K 5.0V 1 MHz CMOS Serial EEPROM FEATURES PACKAGE TYPE • Voltage operating range: 4.5V to 5.5V - Maximum write current 3 mA at 5.5V - Maximum read current 150 jiA at 5.5V - Standby current 1 |iA typical • 1 MHz SE2.bus two wire protocol
|
OCR Scan
|
24FC32
DS21126A-page
|
PDF
|
