K7M321825M

Abstract: K7M321825M-QC75 K7M323625M K7M323625M-QC75
Contextual Info: K7M323625M K7M321825M 1Mx36 & 2Mx18 Flow-Through NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Preliminary 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary

K7M643635M-Q

Contextual Info: K7N643631M K7N641831M Preliminary 2Mx36 & 4Mx18 Pipelined NtRAM TM Document Title 2Mx36 & 4Mx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. Sep. 30. 2002 Advance 0.1 1. Delete the speed bins FT : 7.5ns, 8.5ns / PP : 200MHz

K7N401801B

Abstract: K7N403601B
Contextual Info: K7N403601B K7N401801B 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 350mA to 290mA at -16,

K7N161801A

Abstract: K7N163601A
Contextual Info: K7N163601A K7N161801A 512Kx36 & 1Mx18 Pipelined NtRAM TM Document Title 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Initial document. Add JTAG Scan Order Add x32 org and industrial temperature . Add 165FBGA package Speed bin merge.

K7M321825M

Abstract: K7M323625M
Contextual Info: K7M323625M K7M321825M Preliminary 1Mx36 & 2Mx18 Flow-Through NtRAM TM 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM FEATURES GENERAL DESCRIPTION • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O

K7N161801A

Abstract: K7N163201A K7N163601A
Contextual Info: K7N163601A K7N163201A K7N161801A Preliminary 512Kx36/32 & 1Mx18 Pipelined NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 Draft Date History 1. Initial document. 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .

K7N327245M

Abstract: K7N327249M
Contextual Info: Preliminary 512Kx72 Pipelined NtRAMTM K7N327245M Document Title 512Kx72-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Speed bin merge. From K7N327249M to K7N327245M 2. AC parameter change. tOH min /tLZC(min) from 0.8 to 1.5 at -25

K7M801825B

Abstract: K7M803625B
Contextual Info: K7M803625B K7M801825B Preliminary 256Kx36 & 512Kx18 Flow-Through NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Flow Through NtRAM TM Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial document. May. 18. 2001 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

TM-1011

Contextual Info: TOSHIBA TC55VL836FF-75,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VL836FF is a synchronous static random access memory SRAM organized as 262,144 words by 36 bits. NtRAMTM(no-turnaround) SRAM offers high bandwidth by eliminating dead cycles during

Contextual Info: TOSHIBA TC55VL836FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VL836FFI is a synchronous static random access memory SRAM organized as 262,144 words by 36 bits. NtRAMTM(no-turnaround) SRAM offers high bandwidth by eliminating dead cycles during the

Contextual Info: K7N163645A K7N163245A K7N161845A 512Kx36/32 & 1Mx18 Pipelined NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .

Contextual Info: K7N403609B K7N403209B K7N401809B 128Kx36/x32 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters

Contextual Info: KM736V849 KM718V949 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. June. 09. 1998 Preliminary 0.1 1. Changed DC parameters ICC; from 450mA to 420mA at 150MHZ.

GS880Z18BT-150V

Abstract: GS880Z18BT-200V GS880Z18BT-250V GS880Z32BT-150V GS880Z32BT-200V GS880Z32BT-250V
Contextual Info: GS880Z18/32/36BT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 9Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT No Bus Turn Around functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and

Contextual Info: Preliminary GS8162Z72CC-xxxV 18Mb Pipelined and Flow Through Synchronous NBT SRAM 209-Bump BGA Commercial Temp Industrial Temp Features • NBT No Bus Turn Around functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and

Contextual Info: GS880Z18/32/36CT-xxxIV 100-Pin TQFP Industrial Temp 9Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT No Bus Turn Around functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and

Contextual Info: K7N803645M K7N801845M 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. September. 1997 Preliminary 0.1 1. Changed speed bin from 167MHz to 150MHz

Contextual Info: K7M163635B K7M161835B 512Kx36 & 1Mx18 Flow-Through NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: Preliminary 512Kx72 Pipelined NtRAM TM K7N327245M Document Title 512Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 0.1 1. Initial document. 1. Speed bin merge. From K7N327249M to K7N327245M 2. AC parameter change. tOH min /tLZC(min) from 0.8 to 1.5 at -25

Contextual Info: 512Kx18 Pipelined NtRAMTM KM718V949 Document Title 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. June. 09. 1998 Preliminary 0.1 1. Changed DC parameters ICC; from 450mA to 420mA at 150MHZ. ISB1; from 10mA to 20mA, I SB2 ; from 10mA to 20mA.

Contextual Info: K7N323601M K7N321801M 1Mx36 & 2Mx18 Pipelined NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 0.5 1.0 History Draft Date Remark 1. Initial document. 1. Add 165FBGA package 1. Update JTAG scan order 2. Speed bin merge.

K7n801845m

Contextual Info: K7N803645M K7N801845M 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAM TM Revision History History 1. Initial document. Draft Date September. 1997 Remark Preliminary 0.1 1. Changed speed bin from 167MHz to 150MHz 2. Changed DC Parameters;

Contextual Info: K7N643645M K7N641845M 2Mx36 & 4Mx18 Pipelined NtRAMTM 72Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: K7M163625M K7M161825M PRELIMINARY 512Kx36 & 1Mx18 Flow-Through NtRAMTM Document Title 512Kx36 & 1Mx18-Bit Flow Through NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. March. 25. 1999 Preliminary 0.1 1. Update ICC & ISB values. May. 27. 1999