siemens sab 82532
Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Text: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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CRC-32
235b05
82532N-10.
00702fl2
siemens sab 82532
82258
SA 82532
SAB 80286
csc 2323
sab80286
STT 3 SIEMENS
80286 microprocessor pin out diagram
ESCC2
siemens sab 82525
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B34 SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE jg smd TRANSISTOR code marking wL TRANSISTOR SMD MARKING CODE XI SMD marking B34 TLE4278G TLE4278 AED01546 AEP02113 SD 4278
Text: SIEMENS flE3SbOS □□'ìbfc.fig LSI 5-V Low -D rop Fixed V oltage R egulator TL E 4 278 G Preliminary Data Features • • • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Separated reset and watchdog output
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P-DSO-14-4
Q0700fj-At)
fi23Sfc
TLE4278G
35t01s
2l14x
B34 SMD Transistor
TRANSISTOR SMD MARKING CODE jg
smd TRANSISTOR code marking wL
TRANSISTOR SMD MARKING CODE XI
SMD marking B34
TLE4278G
TLE4278
AED01546
AEP02113
SD 4278
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transistor DA3 307
Abstract: transistor DA3 309 HC-49/transistor DA3 307 DA3 307
Text: • fl235bDS 0 0 8 1 4 4 4 5T1 SIEMENS PROFET BTS412B2 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump
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fl235bDS
BTS412B2
as35bos
412B2
transistor DA3 307
transistor DA3 309
HC-49/transistor DA3 307
DA3 307
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Untitled
Abstract: No abstract text available
Text: SIEMENS HYB 314171BJ-50/-60/-70 3.3V 256 K x 16-Bit Dynamic RAM HYB 314171BJL-50/-60/-70 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh Preliminary Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating tem perature
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314171BJ-50/-60/-70
16-Bit
314171BJL-50/-60/-70
16-Bit
314171BJ/BJL-50/-60/-70
16-DRAM
fl235L
0Dfib53D
314171BJ/B
L-50/-60/-70
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 125W Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAS 125-04W BAS 125-06W A1/A2 JZL III ET Cl C2 CHMT1I
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25-04W
25-06W
Q62702-
OT-323
25-05W
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z58 diode
Abstract: No abstract text available
Text: fcTT &3D D • ÖS3Sfc.GS OGlMbVa 2 M S I E G 88D 14678 — D BUZ 58 SIEMENS AK TI EN 6E SE LLSCH AF- Main ratings N-Channel = 1000 V Draln-source voltage ^DS = 4,2 A Continuous drain current h Draln-source on-resistance ^DS on = 2,0 n Description SIPMOS, N-channel, enhancement mode
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C67078-A1607-A2
as35bos
G--03
fl235bQ5
0014bfl3
z58 diode
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Q62703-Q1325
Abstract: No abstract text available
Text: SIEMENS 3 mm T1 LED, Diffused Besondere Merkmale • • • • • eingefärbtes, diffuses Gehäuse als optischer Indikator einsetzbar Lötspieße mit Aufsetzebene gegurtet lieferbar Störimpulsfest nach DIN 40839 Features • • • • • colored, diffused package
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LR3360,
LS3360,
LO3360
LY3360,
LG3360,
LP3360
aS35bOS
Q62703-Q1325
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Siemens Halbleiter
Abstract: No abstract text available
Text: SIEMENS ICs for Communications 1-Chip Car Radio TUA 4306 Specification 16.3.99 • I aS35bGS 0 1 3 7 ^ 535 ■ Edition 16.3.99 Published by Siem ens AG, Bereich Halbleiter, M arketingKom m unikation, Balanstraße 73, 81541 München Siem ens AG 1995. All Rights Reserved.
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aS35bGS
053SbDS
fiS35b05
fl235bG5
Siemens Halbleiter
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Untitled
Abstract: No abstract text available
Text: SIEMENS Standard EEPROM ICs SLx 24C08/16/P 8/16 Kbit 1024/2048 x 8 bit Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus and Page Protection Mode Data Sheet 1998-07-27 flEBSbDS D llT M T ? b ib SLx 24C08/16/P Revision History: Current Version: 1998-07-27
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24C08/16/P
23SLQS
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Siemens k1403
Abstract: SKM 181 R siemens Package Outlines P-LCC Q67100-H6562 ic ZN 415 SBGX skm 191 siemens si 200 LC Communication cable pin diagram k1403 marking kjd
Text: S IE M E N S S /T Bus Interface C ircuit Extended 1 PEB 2081 Features • Full duplex 2B+D S/T-interface transceiver according to the following specifications: - ITU Recommendation 1.430 - ETS 300 012 - ANSI T 1.605 • 192 kbit/s transmission rate • Pseudo-ternary coding with 100 % pulse width
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P-LCC-28-R
251BI
25IAI
A23SbDS
Siemens k1403
SKM 181 R
siemens Package Outlines P-LCC
Q67100-H6562
ic ZN 415
SBGX
skm 191
siemens si 200 LC Communication cable pin diagram
k1403
marking kjd
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V10390
Abstract: C67078-A1607-A2
Text: ÌT T aaD D • ûEBSbDS oom b ? a 2 88D 14678 msiz g D BUZ 58 SIEMENS AKTIENûESELLSCHAF_ Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-resistance Description Case Type = 1000 V ^DS = 4,2 A h ^DS cn = 2,0 n SIPMOS, N-channel, enhancement mode
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C67078-A1607-A2
235bOS
0014bÃ
V10390
C67078-A1607-A2
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Untitled
Abstract: No abstract text available
Text: SIEMENS Standard EEPROM ICs SLx 24C01/02/P 1/2 Kbit 1 2 8 /2 5 6 x 8 bit Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus and Page Protection Mode D atasheet 1998-07-27 fi535bQ5 DllTMMÔ TE? • \ SLx 24C01/02/P Revision History: Current Version: 1998-07-27
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24C01/02/P
fi535bQ5
H3SL05
D11T474
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
BFG193
Q62702-F1291
OT-223
235b05
Q12177D
D1E1771
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon High-Voltage Transistors BFN 24 BFN 26 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 25, BFN 27 PNP Type
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Q62702-F1065
Q62702-F976
OT-23
fl535b05
aE35hDS
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Untitled
Abstract: No abstract text available
Text: 13—T flñD D • fl235bOS GQlMbSb H ■ SIEG Ö8D 14696 D 7*^3«?^// w '1 BUZ 60 B — SIEMENS AKTIENGESELLSCHAF -Main ratings N-Channel a 400V Draln-source voltage l^ S = 4,5 A Continuous drain current /d Draln-source on-reslstance ^DS on) = 1,5 n
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fl235bOS
as35bos
23Sb05
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H3B SMD code
Abstract: BTS 131 SMD BTS 129 FC34 transistor smd H3b
Text: • 0235 bD 5 □ 1 0 3 3 ,ì 3 7HÖ SIEMENS T rilithIC BTS 774 P re lim in a ry D ata Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications
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023SbDS
fiS35bOS
fl23SbOS
P-DSO-28-9
H3B SMD code
BTS 131 SMD
BTS 129
FC34
transistor smd H3b
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14A3
Abstract: C67078-A1402-A2
Text: i ÖÖD D • 023SbQS □ 0 m cJ3Q a « S I E G 88D 14930 D ' T m3 SF " / / BUZ 216 SIEMENS AKTIEN6ESELLSCHAF -Main ratings N-Channel Draln-source voltage K s Continuous drain current ij Draln-source on-reslstance ^ O S o n ) Description
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23SbQS
C67078-A1402-A2
fl23SbDS
14A3
C67078-A1402-A2
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Untitled
Abstract: No abstract text available
Text: SIEMENS HITFET BTS 941 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage • Input Protection ESD On-state resistance • Thermal Shutdown Current limit Ò(lim) 6 A • Overload protection Nominal load current
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