Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB551V-30T1GG LRB551V-30T1G 1 zApplications High-frequency rectification Switching regulators 2 zFeatures 1 Small surface mounting type. CASE 477– 02, STYLE 1 SOD– 323 2) Ultra low VF VF=0.45V Typ. at 0.5A)
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LRB551V-30T1GG
LRB551V-30T1G
3000/Tape
LRB551V-30T3G
10000/Tape
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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schottky diode sod-123 marking code 120
Abstract: MARKING S3 Marking "s3" Schottky barrier diode sod-123 marking code 120
Text: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR130T1,
MBR130T3
OD-123
1085C/W
OD-123
schottky diode sod-123 marking code 120
MARKING S3
Marking "s3" Schottky barrier
diode sod-123 marking code 120
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68W SOT
Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
Text: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua
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B132-H7456-GI-X-7600
68W SOT
ultra low noise 12GHz
64W SOT23
AUs SOT363
BAS 40-04 Infineon
BAS 68-04
BAT 43 - 46 - 85 - 86
61 SIEMENS
DIODE BAT 19
SOT143 DUAL DIODE
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free transistor equivalent book
Abstract: marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE
Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. For the most current Tape & Reel information, please download BRD8011/D
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DL126TRS/D
DL126/D.
BRD8011/D
free transistor equivalent book
marking H2A sot-23
marking W2 sot363
H2B sot23
transistor number code book FREE
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marking H2A sot-23
Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
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DL126TRS/D
DL126/D.
70/SOT
75/SOT
416/SC
88/SOT
marking H2A sot-23
MPS3904RLRA
EIA 481 SOT363
H2B sot23
transistor 228 T3
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marking 18w sot23
Abstract: marking code 564 SC-74 BRD8011/D sot23-6 marking code 561 QFN 64 8x8 footprint On semiconductor date Code sot-143 24w cooler tvs SMC MARKING lg diode 923 SMA marking code LG
Text: Tape and Reel Packaging Specifications BRD8011/D Rev. 7, January−2007 SCILLC, 2007 Previous Edition @ 2006 “All Rights Reserved’’ http://onsemi.com Micro8 is a trademark of International Rectifier. PowerFLEX is a trademark of Texas Instruments Incorporated.
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BRD8011/D
January-2007
marking 18w sot23
marking code 564 SC-74
BRD8011/D
sot23-6 marking code 561
QFN 64 8x8 footprint
On semiconductor date Code sot-143
24w cooler
tvs SMC MARKING
lg diode 923
SMA marking code LG
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Untitled
Abstract: No abstract text available
Text: , L/ nc. / C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF634 0(2) DESCRIPTION • Drain Current-ID=8.1A@ TC=25°C • Drain Source Voltage: VDSS= 250V(Min) • Static Drain-Source On-Resistance
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O-220C
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EIA-468 label location
Abstract: W1 sot 363 MPS3904RLRA free transistor equivalent book MARKING W2 SOT23 sot353 transistor MARKING CODE LAYOUT G SOT89 marking W2 sot363
Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
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DL126TRS/D
DL126/D.
70/SOT
75/SOT
416/SC
r14525
EIA-468 label location
W1 sot 363
MPS3904RLRA
free transistor equivalent book
MARKING W2 SOT23 sot353
transistor MARKING CODE LAYOUT G SOT89
marking W2 sot363
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TRUMPION MICROELECTRONICS
Abstract: zurac2 TRUMPION RGB sog deinterlace yuv422 T-0911 3102B AD9884 CCIR-656 SAA7113
Text: trumpion T-0911/0912 V0.4 preliminary t r u m p i o n Z UR AC 2 & 3 AUTO 10 ADC DVI ZUR AC2 inOSD exOSD Preliminary specification 6 + OSD RNG Preliminary Spec. Zoom Engine for TFT-LCD Monitor Mar. 3, 2000 T-0911/T-0912 trumpion microelectronics, Inc. trumpion
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T-0911/0912
T-0911/T-0912
PQFP160
12F-5
TRUMPION MICROELECTRONICS
zurac2
TRUMPION
RGB sog
deinterlace yuv422
T-0911
3102B
AD9884
CCIR-656
SAA7113
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode LMDL301T1G These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMVL3401T1G This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount package. • Rugged PIN Structure Coupled with Wirebond Construction
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LMVL3401T1G
OD-323
3000/Tape
LMVL3401T3G
10000/Tape
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lm5z5v6
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators 100 mW SOD–523 Surface Mount 1 ORDERING INFORMATION Device LM5Z2V4T1 SERIES Package Shipping LM5ZxxxT1 SOD-523 3000/Tape&Reel LM5ZxxxT3 SOD-523 10000/Tape&Reel This series of Zener diodes is packaged in a SOD–523 surface mount package that
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Untitled
Abstract: No abstract text available
Text: Z E N E R D IODES 500mW ZMM5225 / ZMM5267 CASE T Y P E : SOD-8ÛC (M ini-M ELF Glass) ÜÜ Nominal Zener voltage<3> at In VzV Type Test current Maximum Zener impedance)1'' at In I n mA Zz t Q at IZK=0.25mA Zzk O Maximum reverse leakage current Typical
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500mW)
ZMM5225
ZMM5267
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MMSZ5243
Abstract: p2 n5
Text: ZENER DIODES SOOmW MMSZ522S THRU MMSZ5267 CASE TYPE: SOD-123 m Nominal Zener voltage ) Maximum Zener Impedance!1) Test current at Izt Zz t Q at Izxa0.25 mA ZZXQ Type Maiting In V zV MMSZ5225 C5 3.0 20 29 MMSZ5226 D1 3.3 20 MMSZ5227 D2 3.6 MMSZ5228 D3 MMSZ5229
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MMSZ522S
MMSZ5267
OD-123
MMSZ5225
MMSZ5226
MMSZ5227
MMSZ5228
MMSZ5229
MMSZ5230
MMSZ5231
MMSZ5243
p2 n5
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diode bas32
Abstract: BAS32 BAS32 sod80 lp450 K50F BAS32 SOD-80
Text: N AMER P H I L I P S / D I S C R E T E OLE D fciki53< ì31 OD15441 b BAS32 HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed for fast logic applications. . This SM diode is a leadless diode in a hermetically sealed SOD-8O envelope with tin-plated metal discs at
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kib53'
OD15441
BAS32
BAS32
diode bas32
BAS32 sod80
lp450
K50F
BAS32 SOD-80
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Untitled
Abstract: No abstract text available
Text: ,N AMER '- ° ~f PHILIPS/DISCRETE - — — ObE D - — - bbSBTBl 0015441 b BAS32 J T V - O f - P l HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications. . This SM diode is a leadless diode in a hermetically sealed SOD-80 envelope w ith tin-plated metal discs at
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BAS32
BAS32
OD-80
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Untitled
Abstract: No abstract text available
Text: Mounting Instructions Supply for automatic assembly In contrast to components with wire leads, practically all SMDs can be supplied in two package forms: • • Bulk Tape Bulk The most straightforward and low-cost mode of SMD d; ry is in bulk, in either antistatic or
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Untitled
Abstract: No abstract text available
Text: <P3 j —j m n r r ^ Pli ELECTRICAL SPECIFICATIONS' 1,0 INDUCTANCE: P3-J3 = P4-J4 89 uH MIN, 0,01V, 10 KHz, 2,0 DC RESISTANCE: P3-J3 : 0,5 ohn MAX P4-J4 : 0,5 ohn MAX 3,0 IMPEDANCE: FREQUENCY (MHz) □HMS MIN 1 500 10 2000 30 3000 70 2000 SOD 600 500 300
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SI-20058
SI-20058
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Untitled
Abstract: No abstract text available
Text: July 1988 mR. Micro Linear ML2003, ML2004 Logarithmic Gain/Attenuator GENERAL DESCRIPTION FEATURES The ML2003 and ML2004 are digitally controlled logarithmic gain/attenuators with a range of -24 to +24dB in O.ldB steps. • Low noise 0 dBrnc max with +24dB gain
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ML2003,
ML2004
ML2003
ML2004
-60dB
1-20kHz
14-pin
18-pin
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BA204
Abstract: BA-204
Text: TELEFUNKEN ELECTRONIC 17E » • ÖTEDO^b OOD'ÌTIB 5 H A L GG BA 204 IM electronic Creative Technologies Silicon Fpitaxial Planar Diode Applications: General purpose Dimensions in mm Cathoda =>26 1 1 <3.9 g<ass -—' - n u— Standard glass case
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NT102
Abstract: No abstract text available
Text: t ö ^ i S F * 5» - u r - »•••• •'-’:^ - v '- « f '* 1 jp L J , I ;L^|p /X :;910-280^143§ b ;ì SILICON SENSORS SIRAD 3 Gallium Aluminum Arsenide Light , Emitting Diodes, produce a narrow band of high intensity non coher ent infrared energy, peaking at 890 nanometers. The SIRAD 3 comes
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Untitled
Abstract: No abstract text available
Text: • Sñ SILICON SENSORS INC D E lfl E SB ^ SS 0 0 0 0 2 0 5 0 T-41-13' I^P‘^ g è v llW jt V V ié Îô n ^ if t :- 5 ^ i 3 l ^ Gl Telephone: 608 -935-2707 ¿tWX: 910-280-1^ " " kL Silicon Sensors SIRAD 4 Gallium Aluminum Arsenide Light Emit- ^ ting Diode emits an intense spectrally narrow band of non coherent infrared energy peaking at 890 nanometers. The SIRAD 4 has a lens^ v
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T-41-13'
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