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    AT42036 Price and Stock

    Broadcom Limited AT-42036-TR1G

    RF TRANS NPN 12V 8GHZ 36 MICRO X
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    Broadcom Limited AT-42036-BLKG

    RF TRANS NPN 12V 8GHZ 36 MICRO X
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    AT42036 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AT-42036 Agilent Technologies General purpose transistor Original PDF
    AT-42036 Avago Technologies General purpose transistor Original PDF
    AT-42036-BLK Agilent Technologies BJT, NPN, General Purpose Transistor, VCB0 20V, IC 0.08A Original PDF
    AT-42036-BLKG Avago Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN BIPO 12V 80MA 36-SMD Original PDF
    AT-42036-TR1 Agilent Technologies BJT, NPN, General Purpose Transistor, VCB0 20V, IC 0.08A Original PDF
    AT-42036-TR1G Avago Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN BIPO 12V 80MA 36-SMD Original PDF

    AT42036 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    micro-x 420

    Abstract: AT-42036 AT-42036-BLK AT-42036-TR1 S21E
    Text: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz


    Original     		AT-42036 AT-42036 me10/-0 5980-1854E 5988-4735EN micro-x 420 AT-42036-BLK AT-42036-TR1 S21E PDF

    AT-42036

    Abstract: S21E micro-x 420
    Text: AT-42036 Up to 6 GHz Medium Power Silicon ­Bipolar Transistor Data Sheet Description Features Avago’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high ­ frequency performance. The AT‑42036 is housed in a cost effective surface mount


    Original     		AT-42036 AT-42036 AT42036 5989-2653EN AV02-0300EN S21E micro-x 420 PDF

    micro-x 420

    Abstract: No abstract text available
    Text: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz


    Original     		AT-42036 5980-1854E micro-x 420 PDF

    ku-band pll lnb

    Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


    Original     		11a/b/g AV00-0061EN AV00-0116EN ku-band pll lnb MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package PDF

    ISDB-t modulator

    Abstract: ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


    Original     		11a/b/g AV00-0116EN AV00-0141EN ISDB-t modulator ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316 PDF

    AT-41435

    Abstract: transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC
    Text: Agilent Technologies Transistors Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		AT-30511 OT-143 AT-30533 OT-23 AT-31011 AT-31033 5988-9509EN 5989-0925EN AT-41435 transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC PDF

    LNA ku-band

    Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)


    Original     		11a/b/g) 5988-9866EN LNA ku-band ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: AT-42036 Up to 6 GHz Medium Power Silicon ­Bipolar Transistor Data Sheet Description Features Avago’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high ­ frequency performance. The AT‑42036 is housed in a cost effective surface mount


    Original     		AT-42036 AT-42036 AT42036 5989-2653EN AV02-0300EN PDF

    Untitled

    Abstract: No abstract text available
    Text: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz Description Agilent’s AT-42036 is a general purpose NPN bipolar transistor that


    Original     		AT-42036 5988-4735EN 5989-2653EN PDF