ATC100B241JT200X Search Results

ATC100B241JT200X Price and Stock

Filter by Manufacturer


Kyocera AVX Components 100B241JT200XC100 Silicon RF Capacitors / Thin Film 240PF 200V 5% 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	100B241JT200XC100	WAFL			100	1 - 10 - 100 $4.3 1000 $4.3 10000 $4.3	Buy Now

ATC100B241JT200X Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mrfe6vp5600hs Abstract: MRFE6VP5600H Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR	Original	MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1	PDF
ATC200B103KT50X Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X	PDF
G2225X7R225KT3AB Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6	PDF
NIPPON CAPACITORS Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi	PDF
81c1000 Abstract: ATC100B241JT200XT Text: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,	Original	MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 81c1000 ATC100B241JT200XT	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,	Original	MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5	PDF
Z25 transistor Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1 Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from	Original	AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 Z25 transistor ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1	PDF
2225x7r225kt3ab Abstract: MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHR6 MRF6VP41KHSR6 ATC100B9R1CT500XT Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 0, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,	Original	MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 2225x7r225kt3ab MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHSR6 ATC100B9R1CT500XT	PDF
UT-90-25 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1305H Rev. 0, 12/2013 RF Power LDMOS Transistors MMRF1305HR5 MMRF1305HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or	Original	MMRF1305H MMRF1305HR5 MMRF1305HSR5 MMRF1305HR5 UT-90-25	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1006H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1006HR5 MMRF1006HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to	Original	MMRF1006H MMRF1006HR5 MMRF1006HSR5 MMRF1006HR5	PDF
RF1000LF Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in	Original	MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 RF1000LF RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio	PDF
SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR Abstract: SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER wifi booster schematic simple fm transmitter mini project report for engineering students Wifi Booster Circuit Diagram wifi signal booster schematic smd-transistor DATA BOOK 2.4 ghz FM wifi RECEIVER CIRCUIT DIAGRAM fm transistor radio mini project 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM Text: APRIL2008 ALSO PUBLISHED ONLINE: www.highfrequencyelectronics.com NEW SYNTHESIZED SIGNAL GENERATOR OFFERS LOW COST, HIGH VALUE INSIDE THIS ISSUE: Transmission Lines on Ion-Implanted Silicon Wafers Spatial Combining of Microwave Noise Radiators Tutorial—Performance Capabilities of Antenna Arrays	Original	APRIL2008 CD-1242-183-10S CD-1242-183-20S CD-1242-183-30S CD-402-802-10S CD-402-802-20S CD-402-802-30S CD-102-103-10S CD-102-103-20S CD-102-103-30S SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER wifi booster schematic simple fm transmitter mini project report for engineering students Wifi Booster Circuit Diagram wifi signal booster schematic smd-transistor DATA BOOK 2.4 ghz FM wifi RECEIVER CIRCUIT DIAGRAM fm transistor radio mini project 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from	Original	AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 AFT05MP075NR1	PDF

G2225X7R225KT3AB Abstract: m27500 transfer impedance Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,	Original	MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5 G2225X7R225KT3AB m27500 transfer impedance	PDF
MRF6VP2600H Abstract: ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4.1, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6 100fficers, MRF6VP2600H ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k	PDF
ATC100B9R1CT500XT Abstract: 2225x7r225kt3ab MRF6VP41KH mrf6vp41kh pcb 1000 watts power amp circuit diagram 22 pf capacitor datasheet A01TKLC NIPPON CAPACITORS MRF6VP41KHR6 A114 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 4, 3/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6VP41KHR6 MRF6VP41KHSR6 Designed primarily for pulsed wideband applications with frequencies up to	Original	MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 MRF6VP41KHR6 ATC100B9R1CT500XT 2225x7r225kt3ab MRF6VP41KH mrf6vp41kh pcb 1000 watts power amp circuit diagram 22 pf capacitor datasheet A01TKLC NIPPON CAPACITORS A114	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1316N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an	Original	MMRF1316N MMRF1316NR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 1, 6/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR	Original	MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6	PDF
ATC100B102JT50XT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in	Original	MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 ATC100B102JT50XT	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial	Original	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25HR6	PDF
MRF6VP2600KH Abstract: TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H 20ficers, MRF6VP2600HR6 MRF6VP2600KH TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw	PDF
MRFE6VP61 Abstract: MRFE6VP 1812sms-39njlc MRFE6VP61K25H J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 3, 10/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25GSR5 MRFE6VP61 MRFE6VP 1812sms-39njlc J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT	PDF

ATC100B241JT200X Search Results

ATC100B241JT200X Price and Stock

Kyocera AVX Components 100B241JT200XC100

ATC100B241JT200X Datasheets Context Search

mrfe6vp5600hs

Untitled

ATC200B103KT50X

G2225X7R225KT3AB

NIPPON CAPACITORS

81c1000

Untitled

Z25 transistor

2225x7r225kt3ab

UT-90-25

Untitled

RF1000LF

SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR

Untitled

G2225X7R225KT3AB

MRF6VP2600H

ATC100B9R1CT500XT

Untitled

Untitled

Untitled

ATC100B102JT50XT

Untitled

MRF6VP2600KH

MRFE6VP61