ATC100B5R1BT250XT Search Results

ATC100B5R1BT250XT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
T491B476K016AT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications	Original	PDF	MRFE6S9125N MRFE6S9125NR1 MRFE6S9125NBR1 T491B476K016AT
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1013H Rev. 0, 7/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.	Original	PDF	MMRF1013H MMRF1013HR5 MMRF1013HSR5 MMRF1013HR5
T491B476K016AT Abstract: CRCW121015R0FKEA MRFE6S9125NR1 A114 A115 AN1955 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1 Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications	Original	PDF	MRFE6S9125N MRFE6S9125NR1 MRFE6S9125NBR1 T491B476K016AT CRCW121015R0FKEA A114 A115 AN1955 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed	Original	PDF	MRF8P29300H MRF8P29300HR6 MRF8P29300HSR6 MRF8P29300HR6
MRF8P29300H Abstract: ATC600F3R3BT250XT GRM32ER72A105K C3225JB2A105K GRM32ER72A105 RO3010 AN1955 GRM32ER72A105KA01L MCGPR63V477M16X32 ATC100B101JT500XT Text: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed	Original	PDF	MRF8P29300H MRF8P29300HR6 MRF8P29300HSR6 MRF8P29300HR6 MRF8P29300H ATC600F3R3BT250XT GRM32ER72A105K C3225JB2A105K GRM32ER72A105 RO3010 AN1955 GRM32ER72A105KA01L MCGPR63V477M16X32 ATC100B101JT500XT