ATC200B103KT50X
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace
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MRFE6VP61K25H
MRFE6VP61K25HR6
MRFE6VP61K25HR5
MRFE6VP61K25HR6
MRFE6VP61K25HR5
MRFE6VP61K25HSR5
MRFE6VP61K25GSR5
ATC200B103KT50X
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C3216X7R2J472M115AA
Abstract: C3225X7S2A475K200AB C4532X7T2J224M200KC C2012X7T2V103K C4532JB2E334M C3225C0G2J682J200AA C4532X7T2J304M c3216c0g C3225C0G2A223J160AA c5750x7s2a156m250kb
Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Mid Voltage 100 to 630V Capacitors Type: Issue date: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] January 2013 TDK MLCC Global Catalog
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C1005
CC0402]
C1608
CC0603]
C2012
CC0805]
C3216
CC1206]
C3225
CC1210]
C3216X7R2J472M115AA
C3225X7S2A475K200AB
C4532X7T2J224M200KC
C2012X7T2V103K
C4532JB2E334M
C3225C0G2J682J200AA
C4532X7T2J304M
c3216c0g
C3225C0G2A223J160AA
c5750x7s2a156m250kb
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C3225X7R2A334K
Abstract: C3225X7R2A225K C3225 CC1210 C3225X7R2A105K C3225C0G2A223J
Text: 1/3 REMINDERS Please read this before using the product. SAFETY REMINDERS REMINDERS 1. If you intend to use a product listed in this catalog for a purpose that may cause loss of life or other damage, you must contact our company’s sales window. 2. We may modify products or discontinue production of a product listed in this catalog without prior notification.
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C5750JF1H226ZT
Abstract: AN3263 C3225JB2A105KT tdk MRF6V4300N MRF6V4300NBR1 JESD22-A113 Resistor mttf C3225JB2A105KT AN1955 MRF6V4300NR1
Text: Document Number: MRF6V4300N Rev. 2, 3/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with
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MRF6V4300N
MRF6V4300NR1
MRF6V4300NBR1
MRF6V4300NR1
C5750JF1H226ZT
AN3263
C3225JB2A105KT tdk
MRF6V4300N
MRF6V4300NBR1
JESD22-A113
Resistor mttf
C3225JB2A105KT
AN1955
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25L
MRFE6VS25LR5
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Untitled
Abstract: No abstract text available
Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Mid Voltage 100 to 630V Type: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: Oct 2013 004-01 / 20131003 / mlcc_commercial_midvoltage_en
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C1005
CC0402]
C1608
CC0603]
C2012
CC0805]
C3216
CC1206]
C3225
CC1210]
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AN3263
Abstract: MRF6V4300N AN1955 MRF6V4300NBR1 MRF6V4300NR1 C3225JB2A105KT
Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with
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MRF6V4300N
MRF6V4300NR1
MRF6V4300NBR1
MRF6V4300NR1
AN3263
MRF6V4300N
AN1955
MRF6V4300NBR1
C3225JB2A105KT
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T68000
Abstract: c2012jb c3225 transistor C5750JB2J224K C1608 X7R C1608 C3225 C4532 C5750 CC0603
Text: 1/8 Mid Voltage Multilayer Ceramic Chip Capacitors C Series FEATURES • The unique design structure for mid voltage enables a compact size with high voltage withstanding. • Rated voltage Edc: 100, 250 and 630V. • C3225, C4532 and C5750 types are specific to reflow soldering.
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C3225,
C4532
C5750
digit50JB2A684K
C5750JB2A684M
C5750JB2A105K
C5750JB2A105M
C5750JB2A155K
C5750JB2A155M
C5750JB2A225K
T68000
c2012jb
c3225 transistor
C5750JB2J224K
C1608 X7R
C1608
C3225
CC0603
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C3225JB2A474K
Abstract: C3225X5R2A225K C3225C0G2J682J C3225JB2A105M
Text: 11/16 C Series C3225 (EIA CC1210) Type Conformity to RoHS Directive FEATURES • The unique design structure for mid voltage enables a compact size with high voltage withstanding. • Rated voltage Edc: 100, 250 and 630V. • C3225 type is specific to reflow soldering.
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C3225
CC1210)
C3225
60ppm/
30ppm/
8A105K
C3225JB2A105M
C3225JB2A155K
C3225JB2A155M
C3225JB2A225K
C3225JB2A474K
C3225X5R2A225K
C3225C0G2J682J
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D260-4118-0000
Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25N
MRFE6VS25NR1
MRFE6VS25GNR1
MRFE6VS25N
D260-4118-0000
MRFE6VS25L
MRFE6VS25GNR1
transistor J128
2422D
21-201-J
ATC100B2R7BT500XT
crcw12065k60f
avx c0805c103k5rac
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CC0603
Abstract: C1608 C5750JB2A475K C3216X7R2A105M
Text: 1/16 REMINDERS Please read this before using the product. SAFETY REMINDERS REMINDERS 1. If you intend to use a product listed in this catalog for a purpose that may cause loss of life or other damage, you must contact our company’s sales window. 2. We may modify products or discontinue production of a product listed in this catalog without prior notification.
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1013H Rev. 0, 7/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.
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MMRF1013H
MMRF1013HR5
MMRF1013HSR5
MMRF1013HR5
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial
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MRFE6VP61K25H
MRFE6VP61K25HR6
MRFE6VP61K25HSR6
MRFE6VP61K25HR6
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C3225JB2A474K
Abstract: C3225X7R2A225K C3225JB2A225K C3225X7R2A105K C3225JB2A105K C3225X7R2E104K C3225C0G2E103J C3225 CC1210 C3225X5R2A155K
Text: 1/3 ご使用上の注意事項 本製品をご使用の前に必ずお読みください。 安全上のご注意 注 意 1. 本カタログに記載の製品を人命または社会的に甚大な損失を与える恐れのある用途でご使用をご検討される場合には必ず弊
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CC3225
CC1210)
00250630V
60ppm/
30ppm/
700pF
000pF
Direct225X7R2A334K
C3225JB2A474K
C3225X7R2A225K
C3225JB2A225K
C3225X7R2A105K
C3225JB2A105K
C3225X7R2E104K
C3225C0G2E103J
C3225
CC1210
C3225X5R2A155K
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Untitled
Abstract: No abstract text available
Text: 1/8 Mid Voltage Multilayer Ceramic Chip Capacitors C Series FEATURES • The unique design structure for mid voltage enables a compact size with high voltage withstanding. • Rated voltage Edc: 100, 250 and 630V. • C3225, C4532 and C5750 types are specific to reflow soldering.
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C3225,
C4532
C5750
C5750JB2A684M
C5750JB2A105K
C5750JB2A105M
C5750JB2A155K
C5750JB2A155M
C5750JB2A225K
C5750JB2A225M
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TDK Ferrite Balun
Abstract: FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator MRFE6VP61K25H NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4, 3/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace
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MRFE6VP61K25H
MRFE6VP61K25HR6
MRFE6VP61K25HSR5
MRFE6VP61K25GSR5
TDK Ferrite Balun
FM LDMOS freescale transistor
NI-1230-4H
1812sms-39njlc
awg 4 high temperature wire resistance calculator
NI-1230-4S
mrfe6vp61k2
PCN15551
MRFE6VP
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CC5750
Abstract: C3216X7R2J102M C5750X7R2A105K c2012x7r2e223k C3216C0G2J681J C1608 c3216c0g C3216 C3225 C5750
Text: 積層セラミックチップコンデンサ 中耐圧 C シリーズ Type: C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: April 2007 ●製品をより正しく安全にご使用いただくために、さらに詳細な特性・仕様をご確認いただける納入仕様書をぜひご請求ください。
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C1608
CC0603]
C2012
CC0805]
C3216
CC1206]
C3225
CC1210]
C4532
CC1812]
CC5750
C3216X7R2J102M
C5750X7R2A105K
c2012x7r2e223k
C3216C0G2J681J
c3216c0g
C5750
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with
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MRF6V4300N
MRF6V4300NR1
MRF6V4300NBR1
MRF6V4300NR1
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Untitled
Abstract: No abstract text available
Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Mid Voltage 100 to 630V Type: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: Jan 2014 005-01 / 20140112 / mlcc_commercial_midvoltage_en
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C1005
CC0402]
C1608
CC0603]
C2012
CC0805]
C3216
CC1206]
C3225
CC1210]
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C5750JF1H226ZT
Abstract: C3225JB2A105KT AN3263 C3225CH2A153JT C3225JB2A105KT tdk ATC100B510JT500XT A113 A114 AN1955 C101
Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 0, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large - signal output and driver applications with
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MRF6V4300N
MRF6V4300NR1
MRF6V4300NBR1
MRF6V4300NR1
C5750JF1H226ZT
C3225JB2A105KT
AN3263
C3225CH2A153JT
C3225JB2A105KT tdk
ATC100B510JT500XT
A113
A114
AN1955
C101
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mrfe6vp61k25h
Abstract: transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial
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MRFE6VP61K25H
MRFE6VP61K25HR6
MRFE6VP61K25HSR6
transistor MRFE6VP61K25H
ATC100B102KT50XT
MRFE6VP
C5750X7S2A106MT
ATC100B471JT200XT
B10TJL
J506 equivalent
87.5-108 mhz w power
Arlon
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 1, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large - signal output and driver applications with
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MRF6V4300N
MRF6V4300NR1
MRF6V4300NBR1
MRF6V4300NR1
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D260-4118-0000
Abstract: 0119A 0190A
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25L
MRFE6VS25LR5
D260-4118-0000
0119A
0190A
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed
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MRF8P29300H
MRF8P29300HR6
MRF8P29300HSR6
MRF8P29300HR6
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