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    Kyocera AVX Components 600F101JT250XT

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    ATC600F101JT250XT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATC100A101JP150

    Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14

    ATC100B470JT500XT

    Abstract: ATC600F101JT250XT GSC362-HYB0900 mrf8p MRF8P9210 mrf8p9210n ATC100B240JT500X ATC100B7R5CT500XT ATC100B9R1CT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P9210N MRF8P9210NR3 ATC100B470JT500XT ATC600F101JT250XT GSC362-HYB0900 mrf8p MRF8P9210 ATC100B240JT500X ATC100B7R5CT500XT ATC100B9R1CT500XT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P9210N MRF8P9210NR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF MMRF1021N MMRF1021NT1

    A5M06

    Abstract: Transistor Z17
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT05MS006N AFT05MS006NT1 A5M06 Transistor Z17

    ATC600F470BT250XT

    Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of


    Original     		PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 DataAFT05MS031N 4/2013Semiconductor, ATC600F470BT250XT ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor

    ATC600F1R8BT250XT

    Abstract: ATC600F220JT250XT lte reference design ATC100A100JP150X MMG3014N ATC200B393KP50XT ATC100A101JP150X
    Text: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design LTE 750 MHz Power Amplifier Lineup InGaP HBT Driving GaAs pHEMT Amplifier Lineup Characteristics This reference design provides a high-gain amplifier solution, specifically


    Original     		PDF 74claims, MMG3014N MRFG35010AN ATC600F1R8BT250XT ATC600F220JT250XT lte reference design ATC100A100JP150X ATC200B393KP50XT ATC100A101JP150X

    AFT504

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT05MS004N AFT05MS004NT1 AFT504

    Z6 3pin

    Abstract: J262 AFT09MS007NT1
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT09MS007N AFT09MS007NT1 Z6 3pin J262 AFT09MS007NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC18120N Rev. 0, 5/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC18120N/GN wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1880 MHz. This multi-stage


    Original     		PDF MD7IC18120N MD7IC18120N/GN MD7IC18120NR1 MD7IC18120GNR1

    81A7031-50-5F

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: A2T07D160W04S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		PDF A2T07D160W04S A2T07D160W04SR3 81A7031-50-5F

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design LTE 750 MHz Power Amplifier Lineup InGaP HBT Driving GaAs pHEMT Amplifier Lineup Characteristics This reference design provides a high-gain amplifier solution, specifically


    Original     		PDF MMG3014N MRFG35010AN

    A5M0

    Abstract: IC 2 5/A5M06
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT05MS006N AFT05MS006NT1 A5M0 IC 2 5/A5M06

    RO4350B

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 500ating 8/2013Semiconductor, RO4350B