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ATC600S1R0 Price and Stock

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American Technical Ceramics Corp ATC600S1R0AW250XT CAPACITOR, CERAMIC, 250 V, C0G, 0.000001 uF, SURFACE MOUNT, 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC600S1R0AW250XT		2,800			1 $0.75 10 $0.75 100 $0.75 1000 $0.3 10000 $0.2625	Buy Now
	ATC600S1R0AW250XT		400			1 $1.8 10 $1.8 100 $0.9 1000 $0.72 10000 $0.72	Buy Now
	ATC600S1R0AW250XT		15			1 $1.08 10 $0.9 100 $0.9 1000 $0.9 10000 $0.9	Buy Now
American Technical Ceramics Corp ATC600S1R0AT250XT CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 250V, 5% +TOL, 5% -TOL, C0G, 30PPM/CEL TC, 0.000001UF, SURFACE MOUNT, 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC600S1R0AT250XT		2,093			1 $3.1596 10 $3.1596 100 $3.1596 1000 $1.1849 10000 $1.1849	Buy Now
American Technical Ceramics Corp ATC600S1R0BT250T CERAMIC CAPACITOR, CERAMIC, 250V, 10% +TOL, 10% -TOL, C0G, 30PPM/CEL TC, 0.000001UF, SURFACE MOUNT, 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC600S1R0BT250T		1,091			1 $1.5 10 $1.5 100 $0.45 1000 $0.39 10000 $0.39	Buy Now
Actel Corporation ATC600S1R0AW250XT CAPACITOR, CERAMIC, 250 V, C0G, 0.000001 uF, SURFACE MOUNT, 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC600S1R0AW250XT		281			1 $1.8 10 $1.8 100 $0.9 1000 $0.72 10000 $0.72	Buy Now
	ATC600S1R0AW250XT		281			1 $1.8 10 $1.8 100 $0.9 1000 $0.72 10000 $0.72	Buy Now
American Technical Ceramics Corp ATC600S1R0BT250XT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC600S1R0BT250XT		168			1 $1.015 10 $1.015 100 $0.5075 1000 $0.3045 10000 $0.3045	Buy Now

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ATC600S1R0 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor SMD P2F Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website	Original	PDF	FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
140-A525-SMD Abstract: Z1 SMD agere c8 c1 atc600 AGRB03GM JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa Text: Preliminary Data Sheet November 2004 AGRB03GM 3 W, 100 MHz—2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRB03GM is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor	Original	PDF	AGRB03GM AGRB03GM IS-95 DS04-259RFPP 140-A525-SMD Z1 SMD agere c8 c1 atc600 JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa
ATC600S10 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth	Original	PDF	MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WHR3 ATC600S10
ATC600S2R7BT250XT Abstract: ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth	Original	PDF	MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WH ATC600S2R7BT250XT ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT
SMD-B 053 Abstract: FPD4000AF BTS 308 atc600 ATC600S1R0 Text: FPD4000AF Datasheet v2.1 4W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: High power AF package 36.5 dBm Output Power P1dB 10.5 dB Power Gain (G1dB) 49 dBm Output IP3 10V Operation 45% Power-Added Efficiency Usable Gain to 4GHz GENERAL DESCRIPTION:	Original	PDF	FPD4000AF FPD4000AF FPD4000AF-EB EB-2000AS-AB 880MHz) EB-2000AS-AA 85GHz) EB-2000AS-AC EB-2000AS-AE SMD-B 053 BTS 308 atc600 ATC600S1R0
transistor SMD P2F Abstract: atc600s smd p2f transistor smd marking code j6 PHEMT marking code a atc600 smd p2f FPD4000AF MIL-HDBK-263 Filtronic Components Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website	Original	PDF	FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F atc600s smd p2f transistor smd marking code j6 PHEMT marking code a atc600 smd p2f MIL-HDBK-263 Filtronic Components
transistor SMD P2F Abstract: smd p2f transistor atc600s FPD4000AF PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8 Text: FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website	Original	PDF	FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F smd p2f transistor atc600s PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8