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    ATF13284 Search Results

    ATF13284 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ATF13284 Agilent Technologies 1-16 Ghz Low Noise Gallium Arsenide FET Scan PDF
    ATF-13284 Agilent Technologies 1-16 Ghz Low Noise Gallium Arsenide FET Scan PDF
    ATF-13284-STR Agilent Technologies 1-16 GHz Low Noise Gallium Arsenide FET Scan PDF
    ATF13284-STR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF-13284-TR1 Agilent Technologies 1-16 GHz Low Noise Gallium Arsenide FET Scan PDF
    ATF13284-TR1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF-13284-TR2 Agilent Technologies 1-16 GHz Low Noise Gallium Arsenide FET Scan PDF

    ATF13284 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ATF13284 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)5 V(BR)GSS (V)-4 I(D) Max. (A)100m P(D) Max. (W)225m Maximum Operating Temp (øC)175õ I(DSS) Min. (A)20m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m


    Original     		PDF ATF13284

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    Toko inductor 20211

    Abstract: AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686
    Text: Low Noise and Moderate Power Amplifiers Using the ATF-21186 Application Note 1064 Introduction This application note describes the use of a low cost Gallium Arsenide Field Effect Transistor GaAs FET designed specifically for the VHF through 2500 MHz frequency range. The Agilent


    Original     		PDF ATF-21186 ATF-21186, 5962-6875E Toko inductor 20211 AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686

    phemt biasing ATF-36077

    Abstract: atf-36077 low noise design ATF 10136 microstripline ATF-10136 ATF36077 thickness of microstripline AN-G004 D5880 amplifier lna low noise amplifier s-band
    Text: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction Design The Avago Technologies ATF-36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF36077 is characterized for use as a low noise amplifier in


    Original     		PDF ATF-36077 ATF36077 AN-G004, ATF-10136, ATF-13284, 5091-9311E 59643854E 5966-0782E phemt biasing ATF-36077 low noise design ATF 10136 microstripline ATF-10136 thickness of microstripline AN-G004 D5880 amplifier lna low noise amplifier s-band

    ATF-13484

    Abstract: atf 36163 Low Noise Amplifier low noise design ATF 10136 A008 amplifier TRANSISTOR amplifier TRANSISTOR 12 GHZ ATF pHEMT ATF13484 A007 transistor atf Microwave GaAs FET catalogue
    Text: Application Information The following application information is either published in this catalog or available from your local Hewlett-Packard sales office, authorized distributor, or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		PDF ATF-10236 ATF-10136, ATF-13736, ATF-13484 ATF-21186 ATF-36163 ATF-36163 ATF-36077 ATF-13484 atf 36163 Low Noise Amplifier low noise design ATF 10136 A008 amplifier TRANSISTOR amplifier TRANSISTOR 12 GHZ ATF pHEMT ATF13484 A007 transistor atf Microwave GaAs FET catalogue

    marking IAM transistor sot-23

    Abstract: ATF-13170 transistor MARKING IAM IAM-XXX08 IAM-81008 HSMP 30XX HSMP 30XX ATF HSMS-282X HSMS-820X JESD22
    Text: Quality Assurance Concepts and␣ Methodology Semiconductor Devices and Hybrid␣ Assemblies Reliability/Quality Philosophy Recognizing the increasing importance of microwave component reliability for the consumer, industrial, and military markets, the Components Group


    Original     		PDF

    phemt biasing ATF-36077

    Abstract: D5880 AN-G004 microstripline ATF-10136 ATF-36077 low noise design ATF 10136 agilent atf10136 ATF13284 ATF36077
    Text: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction The Agilent Technologies ATF36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF-36077 is characterized for use as a low noise amplifier in 12 GHz DBS


    Original     		PDF ATF-36077 ATF36077 ATF-36077 AN-G004, ATF-10136, ATF13284, 5091-9311E 5964-3854E 5966-0782E phemt biasing ATF-36077 D5880 AN-G004 microstripline ATF-10136 low noise design ATF 10136 agilent atf10136 ATF13284

    ATF-13484

    Abstract: ATF at 2.4 Ghz bipolar transistor 2.4 ghz s-parameter ATF pHEMT ATF-36163 ATF13136 amplifier TRANSISTOR 12 GHZ low noise design ATF 10136 bipolar transistor ghz s-parameter phemt biasing ATF-36077
    Text: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		PDF 5091-8350E 5966-0779E 5965-1235E ATF-36163 5965-5956E ATF-36077 5966-0783E ATF-36077 ATF-13484 ATF at 2.4 Ghz bipolar transistor 2.4 ghz s-parameter ATF pHEMT ATF13136 amplifier TRANSISTOR 12 GHZ low noise design ATF 10136 bipolar transistor ghz s-parameter phemt biasing ATF-36077

    ATF-35176

    Abstract: ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band
    Text: Direct Broadcast Satellite Systems Application Note A009 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the


    Original     		PDF AN1091, ATF-36163 5965-1235E. AN1136, 5966-2488E. AN1139, INA-51063 5091-8819E 5968-3629E ATF-35176 ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band

    phemt biasing ATF-36077

    Abstract: ATF-13284 5964-3854E D5880 amplifier lna low noise amplifier s-band ATF-36077 low noise design ATF 10136
    Text: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction The Hewlett-Packard ATF-36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF-36077 is characterized for use as a low noise amplifier in


    Original     		PDF ATF-36077 AN-G004, ATF-10136, ATF13284, 5091-9311E 5964-3854E 5966-0782E phemt biasing ATF-36077 ATF-13284 5964-3854E D5880 amplifier lna low noise amplifier s-band low noise design ATF 10136

    ATF-13284-STR

    Abstract: ATF-13284 ATF-13284-TR1 ATF-13284-TR2 FW50 IS21I2
    Text: ATF-13284 1-16 GHz Low Noise G allium Arsenide FET H E W LE T T PACKARD ^ 84 Plastic Package Feature« • Low Nolee Figure: 0.7 dB typical at 4 GHz • High Associated Gain: 15.0 dB typical at 4 GHz • High Output Power: 18.0 dBm typical Pi dB at 4 GHz • Low Cost I


    OCR Scan     		PDF ATF-13284 ATF-13284 ATF-13284-STR ATF-13284-TR1 ATF-13284-TR2 FW50 IS21I2

    ATF-13284

    Abstract: No abstract text available
    Text: HE ULE TT-PACKARD/ CUPNTS m blE ]> H EW LETT PACKARD • OOtHflTÖ 740 M H P A f T c ' X Ï 8? w • If1 .GHz Low Noise Gallium Arsenide FET 84 Plastic Package Features • • Low Noise Figure: 0.7 dB typical at 4 GHz High Associated Gain: 15.0 dB typical at 4 GHz


    OCR Scan     		PDF ATF-13284

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61

    AN-G005

    Abstract: transistor 1248 Toko inductor 20211 transistor tt 2206 transistor w1a 94 transistor rf m 9860 ST 9343 transistor bd 9262 ef Toko 20211 LT 7202
    Text: r m HEW LETT mL'/LM P A C K A R D Low N oise and M oderate P ow er A m plifiers U sin g th e ATF-21186 Application Note 1064 In tro d u c tio n This application note describes the use of a low cost Gallium Arsenide Field Effect T ransistor GaAs FET designed specifically


    OCR Scan     		PDF ATF-21186 ATF-21186, device40 5962-6875E AN-G005 transistor 1248 Toko inductor 20211 transistor tt 2206 transistor w1a 94 transistor rf m 9860 ST 9343 transistor bd 9262 ef Toko 20211 LT 7202

    ATF-13284

    Abstract: ATF-13284-STR ATF-13284-TR1 ATF-13284-TR2 IS21I2
    Text: w w w . D a ta s h e e t. i n H EW LETT PACKARD f T c ' X Ï 8? w • If1 .GHz Low Noise Gallium Arsenide FET 84 Plastic Package Features • • • Low Noise Figure: 0.7 dB typical at 4 GHz High Associated Gain: 15.0 dB typical at 4 GHz High Output Power: 18.0 dBm typical Pi dB


    OCR Scan     		PDF ATF-13284 ATF-13284 ATF-13284-STR ATF-13284-TR1 ATF-13284-TR2 IS21I2

    Untitled

    Abstract: No abstract text available
    Text: ¥ho% mL'fíMPHEWLETT a c k a rd ATF-13284 1-16 GHz Low Noise Gallium Arsenide FET 84 Plastic Package Features • • • Low Noise Figure: 0.7 dB typical at 4 GHz High Associated Gain: 15.0 dB typical at 4 GHz High Output Power: 18.0 dBm typical Pi dB at 4 GHz


    OCR Scan     		PDF ATF-13284

    ATF-35176

    Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
    Text: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5


    OCR Scan     		PDF ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-35176 ATF-3507 ATF-35076 ATF-44100 ATF26550 ATF-13036 ATF-35576 ATF-35376