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    D5880 Price and Stock

    Wakefield-Vette DUALLED-5880

    LED FAN HEAT SINK 58X80MM
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    DigiKey DUALLED-5880 Bulk 1,001 1
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    Samtec Inc FW-05-05-G-D-588-085

    CONN HDR 10POS 0.05 STACK SMD
    Free Sample
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    Samtec Inc FW-07-05-G-D-588-087

    FLEXIBLE MICRO BOARD STACKING HE
    Free Sample
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    Powell Electronics FW-07-05-G-D-588-087 51 1
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    Samtec Inc FW-25-05-G-D-588-087

    FLEXIBLE MICRO BOARD STACKING HE
    Free Sample
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    DigiKey FW-25-05-G-D-588-087 Tube 18
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    Mouser Electronics FW-25-05-G-D-588-087
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    Samtec Inc FW-03-05-G-D-588-085-A

    FLEXIBLE MICRO BOARD STACKING HE
    Free Sample
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    DigiKey FW-03-05-G-D-588-085-A Bulk 1
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    Master Electronics FW-03-05-G-D-588-085-A
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    Find more D5880 price and stock on Findchips.com

    D5880 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D5880 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    D5880A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    D5880B Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    D5880C Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    D5880 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Toko inductor 20211

    Abstract: AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686
    Text: Low Noise and Moderate Power Amplifiers Using the ATF-21186 Application Note 1064 Introduction This application note describes the use of a low cost Gallium Arsenide Field Effect Transistor GaAs FET designed specifically for the VHF through 2500 MHz frequency range. The Agilent


    Original     		ATF-21186 ATF-21186, 5962-6875E Toko inductor 20211 AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686 PDF

    TB228

    Abstract: c12 ph zener diode ph c15 zener c10 ph zener zener diode c16 ph
    Text: March 6, 2014 TB228 Frequency=20-1000MHz Pout=1W Gain=13dB avg. Vds=28Vdc Idq=0.8A LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com March 6, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012


    Original     		TB228 20-1000MHz 28Vdc LP801 CF14JT150R CF14JT3K90 ECA-1JHG470 CF14JT10K0 MCR18EZHJ222 MCR18EZPJ103 TB228 c12 ph zener diode ph c15 zener c10 ph zener zener diode c16 ph PDF

    phemt biasing ATF-36077

    Abstract: atf-36077 low noise design ATF 10136 microstripline ATF-10136 ATF36077 thickness of microstripline AN-G004 D5880 amplifier lna low noise amplifier s-band
    Text: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction Design The Avago Technologies ATF-36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF36077 is characterized for use as a low noise amplifier in


    Original     		ATF-36077 ATF36077 AN-G004, ATF-10136, ATF-13284, 5091-9311E 59643854E 5966-0782E phemt biasing ATF-36077 low noise design ATF 10136 microstripline ATF-10136 thickness of microstripline AN-G004 D5880 amplifier lna low noise amplifier s-band PDF

    phemt biasing ATF-36077

    Abstract: D5880 AN-G004 microstripline ATF-10136 ATF-36077 low noise design ATF 10136 agilent atf10136 ATF13284 ATF36077
    Text: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction The Agilent Technologies ATF36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF-36077 is characterized for use as a low noise amplifier in 12 GHz DBS


    Original     		ATF-36077 ATF36077 ATF-36077 AN-G004, ATF-10136, ATF13284, 5091-9311E 5964-3854E 5966-0782E phemt biasing ATF-36077 D5880 AN-G004 microstripline ATF-10136 low noise design ATF 10136 agilent atf10136 ATF13284 PDF

    phemt biasing ATF-36077

    Abstract: ATF-13284 5964-3854E D5880 amplifier lna low noise amplifier s-band ATF-36077 low noise design ATF 10136
    Text: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction The Hewlett-Packard ATF-36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF-36077 is characterized for use as a low noise amplifier in


    Original     		ATF-36077 AN-G004, ATF-10136, ATF13284, 5091-9311E 5964-3854E 5966-0782E phemt biasing ATF-36077 ATF-13284 5964-3854E D5880 amplifier lna low noise amplifier s-band low noise design ATF 10136 PDF

    TRANSISTOR noise figure measurements

    Abstract: Hewlett-Packard application note 970 et1102 14CL 40 HFET-1101 HFET-1102 2N6680 D5880 application note Hewlett-Packard 970 line AMPLIFIER satellite
    Text: NEW H E W L E T T P A C KARD 2N6680 HFET-1101 HFET-1102 MICROWAVE GaAS FETS GaAs FETs COMPONENTS Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 dB Maximum at 4 GHz (HFET-1102) 1.5 dB Typical a HIGH GAIN 16 dB Typical at 4 GHz HIGH OUTPUT POWER


    OCR Scan     		2N6680 HFET-1101) HFET-1102 2N6680) HFET-1102) HFET-1102 TRANSISTOR noise figure measurements Hewlett-Packard application note 970 et1102 14CL 40 HFET-1101 2N6680 D5880 application note Hewlett-Packard 970 line AMPLIFIER satellite PDF

    AN-G005

    Abstract: transistor 1248 Toko inductor 20211 transistor tt 2206 transistor w1a 94 transistor rf m 9860 ST 9343 transistor bd 9262 ef Toko 20211 LT 7202
    Text: r m HEW LETT mL'/LM P A C K A R D Low N oise and M oderate P ow er A m plifiers U sin g th e ATF-21186 Application Note 1064 In tro d u c tio n This application note describes the use of a low cost Gallium Arsenide Field Effect T ransistor GaAs FET designed specifically


    OCR Scan     		ATF-21186 ATF-21186, device40 5962-6875E AN-G005 transistor 1248 Toko inductor 20211 transistor tt 2206 transistor w1a 94 transistor rf m 9860 ST 9343 transistor bd 9262 ef Toko 20211 LT 7202 PDF