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    B 1038 SUPERIOR Search Results

    B 1038 SUPERIOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    iW3662-01-QFN5 Renesas Electronics Corporation Low Voltage SSL LED Driver for MR16 Applications Offers Universal Transformer Compatibility and Superior Dimmer Compatibility Visit Renesas Electronics Corporation
    iW3662-00-QFN5 Renesas Electronics Corporation Low Voltage SSL LED Driver for MR16 Applications Offers Universal Transformer Compatibility and Superior Dimmer Compatibility Visit Renesas Electronics Corporation
    ADC1038CIWM Rochester Electronics LLC ADC1038 - ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20 Visit Rochester Electronics LLC Buy
    MSS1038-105KLC Coilcraft Inc General Purpose Inductor, 1000uH, 10%, 1 Element, Ferrite-Core, SMD, 4039, ROHS COMPLIANT Visit Coilcraft Inc
    MSS1038-152NLB Coilcraft Inc General Purpose Inductor, 1.5uH, 30%, 1 Element, Ferrite-Core, SMD, 4039, ROHS COMPLIANT Visit Coilcraft Inc

    B 1038 SUPERIOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MADP-007224-01072T

    Abstract: MADP-007224-01072
    Text: MADP-007224-01072T Non Magnetic MELF PIN Diode Features Rectangular MELF SMQ Hermetically Sealed Low Loss Low Distortion High Isolation Passivated PIN Diode Chips Full Face Bonds Ultra Low Non-Magnetic Packages Suitable for MRI Applications • High Power Handling Capability


    Original     		MADP-007224-01072T MADP-007224-01072T 100mA MADP-007224-01072 100VDC 100MHz MADP-007224-01072 PDF

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 PDF

    atc200b104kw50

    Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147
    Text: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PTFB183404F PTFB183404F 340-watt atc200b104kw50 TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147 PDF

    TL139

    Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131 PDF

    HFBR-1414 receiver application notes

    Abstract: hp HFBR-1414 application notes Driver circuit hfbr-2412 HFBR-0400 HFBR-0414 HFBR-0416 HFBR-14X2 HFBR-14X4 HFBR-24X6 log RX2 1040
    Text: Low Cost, Miniature Fiber Optic Components with ST , SMA, SC and FC Ports Technical Data HFBR-0400 Series Features Applications • Meets IEEE 802.3 Ethernet and 802.5 Token Ring Standards • Low Cost Transmitters and Receivers • Choice of ST®, SMA, SC or


    Original     		HFBR-0400 Reliabil0400 MIL-STD-883 HFBR-1414 receiver application notes hp HFBR-1414 application notes Driver circuit hfbr-2412 HFBR-0414 HFBR-0416 HFBR-14X2 HFBR-14X4 HFBR-24X6 log RX2 1040 PDF

    ultem 1010

    Abstract: hp HFBR-1414 application notes SMA-905 drawing HFBR-1414T HFBR-2414 pt100 schematic HFBR-2416 receiver application notes HFBR-0416 HFBR 04X0 HFBR-1414 receiver application notes
    Text: Low Cost, Miniature Fiber Optic Components with ST , SMA, SC and FC Ports Technical Data HFBR-0400 Series Features Applications • Meets IEEE 802.3 Ethernet and 802.5 Token Ring Standards • Low Cost Transmitters and Receivers • Choice of ST®, SMA, SC or


    Original     		HFBR-0400 Reliabil0400 MIL-STD-883 ultem 1010 hp HFBR-1414 application notes SMA-905 drawing HFBR-1414T HFBR-2414 pt100 schematic HFBR-2416 receiver application notes HFBR-0416 HFBR 04X0 HFBR-1414 receiver application notes PDF

    TL172

    Abstract: TL170
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications


    Original     		PTFB183404E PTFB183404F PTFB183404E PTFB183404F 340-watt H-37275-6/2 TL172 TL170 PDF

    Mosfet

    Abstract: SSPL2015
    Text: SSPL2015 200V N-Channel MOSFET Main Product Characteristics VDSS 200V RDS on 0.13ohm(typ.) ID 18A ① TO - 220 Schematic Diagram Marking and Pin Assignment Features and Benefits   Advanced Process Technology Special designed for PWM, load switching and


    Original     		SSPL2015 13ohm O-220 to175 Mosfet SSPL2015 PDF

    walkie talkie circuit diagram

    Abstract: Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12
    Text: Proximity Sensors x File 9006 CONTENTS Schneider Electric Brands Description Page Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 Auto-adaptable and Standard Flat Inductive Proximity Sensor . . . . . . . . . . . . . . . 206


    Original     		5-4-199X) LR46094 LR44087 E39291 E39281 walkie talkie circuit diagram Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12 PDF

    MAPK3000

    Abstract: No abstract text available
    Text: 2000 Volt and 3000 Volt PIN Diodes MA4PK2000, 3000 KILOVOLT Series V3.00 Features ● ● ● ● ● ● ● Voltage Ratings to 3000 Volts 25 Ampere Current Rating Designed for HF, Multi-Kilowatt Switches Low Loss, Low Distortion Design Rugged, Hermetically Sealed Packaging


    Original     		MA4PK2000, carrier02 MAPK3000 PDF

    TCXO mtbf

    Abstract: transistor c333 AN-932 MIL-PRF-55310 spec OS-68338 DOC200103 radiation cots cmos B A date sheet 2011 VECTRON 2501 manufacturer list cots radiation
    Text: REV B DESCRIPTION DATE 7/1/08 CO-11365 PREP SM APPD HW VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY S. Murphy 6/19/08 Specification, Hybrid TCXO QUALITY R. Smith 6/19/08 Hi-Rel Standard ENGINEERING H. Wilson 6/19/08 CODE IDENT NO SIZE


    Original     		CO-11365 DOC200103 M55342) M55342 TCXO mtbf transistor c333 AN-932 MIL-PRF-55310 spec OS-68338 DOC200103 radiation cots cmos B A date sheet 2011 VECTRON 2501 manufacturer list cots radiation PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


    Original     		PTFB183408SV PTFB183408SV 340-watt PDF

    DOC200103

    Abstract: transistor c331 transistor c333 bipolar cots radiation HT-67849 MIL-PRF-55310 OS-68338 MIL-PRF-55310 spec TCXO mtbf M55365
    Text: REV C DESCRIPTION DATE 7/15/09 CO-15263 PREP SM APPD HW VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY S. Murphy 6/19/08 Specification, Hybrid TCXO QUALITY R. Smith 6/19/08 Hi-Rel Standard ENGINEERING H. Wilson 6/19/08 CODE IDENT NO SIZE


    Original     		CO-15263 DOC200103 M55342) M55342 DOC200103 transistor c331 transistor c333 bipolar cots radiation HT-67849 MIL-PRF-55310 OS-68338 MIL-PRF-55310 spec TCXO mtbf M55365 PDF

    Untitled

    Abstract: No abstract text available
    Text: REV D DESCRIPTION DATE 11/5/14 CO-24284 PREP HLW APPD DF Specification, Hybrid TCXO Hi-Rel Standard MOUNT HOLLY SPRINGS, PA 17065 THE RECORD OF APPROVAL FOR THIS DOCUMENT IS MAINTAINED ELECTRONICALLY WITHIN THE ERP SYSTEM CODE IDENT NO SIZE 00136 A DWG. NO.


    Original     		CO-24284 DOC200103 M55342 Mil-STD-981. PDF

    3SK59

    Abstract: 3SK59-GR diode jn7 dual 1038 Transistor
    Text: 2/U □ 3 h 3SK SILICON N-CHANNEL DEPLETION DUAL GATE MOS FIELD EFFECT TRANSISTOR O rMfa BF.MIXJI3 , VHF «Jirtlffl Unit in mm PM TUNER,VHF Amplifier Applications. -to AQC&fS&B: < AGCHfKi 'Vi ; 0res = C103pF Typ. &ntTj- ; NF = 2.2 dB (Typ .) C t— 100MHz )


    OCR Scan     		100MHz 3SK59 3SK59-GR diode jn7 dual 1038 Transistor PDF

    ma40208

    Abstract: MA400 MA40052 MA40268-276
    Text: Chip and Packaged Silicon Schottky Detector Diodes Features • WIDE SELECTION OF PACKAGES FOR STRIPLINE, COAXIAL AND WAVEGUIDE DETECTORS ■ CHIP DIODES AVAILABLE 120 ■ BOTH P AND N TYPE DIODES 276 I ■ EXCELLENT SENSITIVITY THROUGH Ka-BAND ■ LOW 1/f NOISE


    OCR Scan     		PDF

    B 1038 superior

    Abstract: irfp9240
    Text: PD-9.481C International IrâRi Rectifier IRFP9240 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description


    OCR Scan     		IRFP9240 O-247 O-218 B 1038 superior irfp9240 PDF

    CD 1517

    Abstract: IRFP9240
    Text: PD-9.481C International S Rectifier IRFP9240 HEXFET P o w e r M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description


    OCR Scan     		IRFP9240 -200V O-247 T0-220 O-218 CD 1517 IRFP9240 PDF

    Untitled

    Abstract: No abstract text available
    Text: International Rectifier HEXFET Power M O S FE T 465S452 OOlSSSb D71 • INR PD-9.481C IRFP9240 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		465S452 IRFP9240 O-247 T0-220 O-247 QG155bl 150KA PDF

    MA4PK2004

    Abstract: MA4PK3001
    Text: an A M P com pany 2000 Volt and 3000 Volt PIN Diodes MA4PK2000, 3000 KILOVOLT Series V3.00 Features • • • • • • • Voltage Ratings to 3000 Volts 25 Ampere Current Rating Designed for HF, Multi-Kilowatt Switches Low Loss, Low Distortion Design


    OCR Scan     		MA4PK2000, resis30 MA4PK2004 MA4PK3001 PDF

    MA4PK2004

    Abstract: LM 072 MA4P diode mri pin switch MA4PK3003 100 mhz hf diode 50 ampere MA4PK3004 MA4PK2000 MA4PK2001 MA4PK2002
    Text: an A M P com pany 2000 Volt and 3000 Volt PIN Diodes MA4PK2000, 3000 KILOVOLT Series V3.00 Features • Voltage Ratings to 3000 Volts • 2 5 Ampere Current Rating • Designed for HF, Multi-Kilowatt Switches • Low Loss, Low Distortion Design • Rugged, Hermetically Sealed Packaging


    OCR Scan     		carrie05 MA4PK3003 MA4PK3004 MA4PK2004 LM 072 MA4P diode mri pin switch MA4PK3003 100 mhz hf diode 50 ampere MA4PK3004 MA4PK2000 MA4PK2001 MA4PK2002 PDF

    6-40 UNF

    Abstract: No abstract text available
    Text: M an A M P com pany 2000 Volt and 3000 Volt PIN Diodes MA4PK2000, 3000 KILOVOLT Series V3.00 Features • • • • • • • Voltage Ratings to 3000 Volts 25 Ampere Current Rating D esigned for HF, Multi-Kilowatt Switches Low Loss, Low Distortion Design


    OCR Scan     		MA4PK2000, 6-40 UNF PDF

    d 2331

    Abstract: half adder ic number of half adder ic with full specification vts 7070
    Text: VITESSE SEMICONDUCTOR MflE D VITESSE FEATURES • Superior performance: high speed/low power • Array performance: - D flip-flop toggle rates: >1 GHz - Typical gate delay: 177 ps @ 1.1 mW 2-Input NOR, F.O. = 3 ,1 .5 mm wire - TTL/CM O S inputs/outputs to support up to


    OCR Scan     		T502331 00D0574 LT117A LT117A d 2331 half adder ic number of half adder ic with full specification vts 7070 PDF

    FET 3N143

    Abstract: maximum drain voltage of FET 3N143 3n128 air variable capacitor 3N143 RCA-3N128 JV3I transistor 3N128 equivalent RCA Solid State amplifier AN-3193
    Text: G E SOLI] STATE “ 3875081 G E SOLID STATE Di” DE pflTSDfll D D m i a M 2 | l * B“ 01E 14.984 Uj *7-31-«*5“ Small-Signal MOSFETs. .


    OCR Scan     		3N128, 3N143 3N143 3N128 FET 3N143 maximum drain voltage of FET 3N143 air variable capacitor RCA-3N128 JV3I transistor 3N128 equivalent RCA Solid State amplifier AN-3193 PDF