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    STMicroelectronics STB50NE10T4

    MOSFET N-CH 100V 50A D2PAK
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    DigiKey STB50NE10T4 Reel 1,000
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    • 1000 $1.23267
    • 10000 $1.1625
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    STMicroelectronics STB50NE10L

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    Bristol Electronics STB50NE10L 40
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    B50NE Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: B50NE08 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST B50NE08 • ■ ■ ■ ■ ■ V DSS R DS on ID 80 V <0.024 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		PDF STB50NE08 B50NE08 O-263

    b50ne10

    Abstract: B50NE1 STB50NE10T4 B50N JESD97 STB50NE10
    Text: B50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID B50NE10 100V <0.027Ω 50A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization


    Original     		PDF STB50NE10 b50ne10 B50NE1 STB50NE10T4 B50N JESD97 STB50NE10

    B50NE10

    Abstract: STB50NE10T4 JESD97 STB50NE10 47S25
    Text: B50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID B50NE10 100V <0.027Ω 50A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization


    Original     		PDF STB50NE10 B50NE10 STB50NE10T4 JESD97 STB50NE10 47S25

    B50NE1

    Abstract: b50ne
    Text: B50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID B50NE10 100V <0.027Ω 50A ) s ( t c u d o ) r s ( P t Description c e t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s t


    Original     		PDF STB50NE10 STB50NE10 B50NE1 b50ne