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Siemens 6AG19720BA122XA0 SIPLUS DP PB CONNECTOR WR STRAIG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	6AG19720BA122XA0	Box	2		1	1 $237.16 10 $184.645 100 $152.8936 1000 $152.8936 10000 $152.8936	Buy Now
Mouser Electronics	6AG19720BA122XA0					1 $220.93 10 $184.64 100 $152.89 1000 $152.89 10000 $152.89	Get Quote
RS	6AG19720BA122XA0	Bulk	4	3 Weeks	1	1 $241.9 10 $224.97 100 $217.71 1000 $217.71 10000 $217.71	Buy Now
L-com Inc BA122 ADAPTOR F M/F M
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DigiKey	BA122	Bag			1	1 $6.12 10 $6.12 100 $6.12 1000 $6.12 10000 $6.12	Buy Now
Newark	BA122	Bulk	10,660		1	1 $4.15 10 $4.15 100 $4.15 1000 $4.15 10000 $4.15	Buy Now
RS	BA122	Bulk		8 Weeks	1	1 $4.15 10 $4.15 100 $3.6 1000 $3.6 10000 $3.6	Get Quote
Onlinecomponents.com	BA122					1 - 10 $5.27 100 $4.09 1000 $3.65 10000 $3.51	Buy Now
OMRON Industrial Automation NX-TBA122 NX TERMINAL BLOCK 12 PTS(A+B)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NX-TBA122	Bulk			1	1 $36 10 $36 100 $36 1000 $36 10000 $36	Buy Now
Skyworks Solutions Inc 565CBA122M880ACG DIFFERENTIAL/SINGLE-ENDED; SINGL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	565CBA122M880ACG				50	1 - 10 - 100 $13.1916 1000 $13.1916 10000 $13.1916	Buy Now
Mouser Electronics	565CBA122M880ACG					1 $11.42 10 $11.29 100 $9.59 1000 $9.59 10000 $9.59	Get Quote
Skyworks Solutions Inc 515BBA122M880BAG XTAL OSCILLATOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	515BBA122M880BAG				200	1 - 10 - 100 - 1000 $6.91245 10000 $6.91245	Buy Now
Mouser Electronics	515BBA122M880BAG					1 - 10 - 100 - 1000 $6.91 10000 $6.91	Get Quote
Richardson RFPD	515BBA122M880BAG				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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BA122 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
BA122	L-Com	ADAPTOR F M/F M	Original	PDF
BA122	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BA122	Unknown	Cross Reference Datasheet	Scan	PDF
BA12.201	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF

BA122 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SAMSUNG MCP Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)	Original	KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor	PDF
Untitled Abstract: No abstract text available Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised	Original	K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX	PDF
P-TFBGA63-0911-0 Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112 Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory	Original	TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112	PDF
BA102 Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96 Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.	Original	TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96	PDF
BA102 Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65 Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for	Original	TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65	PDF
K8P2815UQB Abstract: No abstract text available Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB	PDF
BA258 Abstract: ba146 BA148 ba198 BA204 Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204	PDF
samsung electronics ba41 Abstract: BA175 Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175	PDF
BA379 Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324	PDF
Untitled Abstract: No abstract text available Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed	Original	K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh	PDF
samsung ba92 Abstract: BA137 k8p3215 Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215	PDF
BA1405 Abstract: 1N1307 Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MC68PM302 Integrated Multiprotocol Processor with PCMCIA Reference Manual  1995 Motorola, Inc. All Rights Reserved For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.	Original	MC68PM302 MC68PM302 MC68PM302RM/AD, M68000PM/AD, MC68000 MC68302UM/AD, MC68302 MC68PM302/D, BA1405 1N1307	PDF
diode ba102 Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641 Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory	Original	TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641	PDF
TC58FVM7B5BTG65 Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65 Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as	Original	TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65	PDF

motorola 6800 8bit hardware architecture Abstract: LP 7618 LM 301A MC68356 MC68000 MC68302 MC68PM302 PM302 68000-bus TO878 Text: Freescale Semiconductor, Inc. Microprocessors and Memory Technologies Group Freescale Semiconductor, Inc. MC68PM302 Integrated Multiprotocol Processor with PCMCIA Reference Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding	Original	MC68PM302 MC68PM302 INDEX-10 motorola 6800 8bit hardware architecture LP 7618 LM 301A MC68356 MC68000 MC68302 PM302 68000-bus TO878	PDF
06SEC Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash	PDF
K8P6415UQB Abstract: K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64 Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	K8P6415UQB 047MAX 64-Ball 60Solder K8P6415UQB K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64	PDF
TC58FVM7B5BTG65 Abstract: TC58FVM7t5BTG65 BK-10 HA145 Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as	Original	TC58FVM7 134217728-bit, TC58FVM7B5BTG65 TC58FVM7t5BTG65 BK-10 HA145	PDF
BA254 Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT Text: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features	Original	TC58FVM7 128-MBIT TC58FVM7T2A/B2A 134217728-bit, BA254 ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT	PDF
1/Varicap ba122 Abstract: No abstract text available Text: 8 7 6 4 5 3 2 1 REVISIONS THE INFORMATION CONTAINED IN THIS DRAWING IS THE SOLE PROPERTY OF L-COM, INC. ANY REPRODUCTION IN PART OR WHOLE WITHOUT THE WRITTEN PERMISSION OF L-COM, INC. IS PROHIBITED. DATE DESCRIPTION REV APPROVED A RELEASED FOR PRODUCTION 02/07/01	Original	BA122 BA122 1/Varicap ba122	PDF
BA100 diode Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode Text: KADxx0300B - Txxx MCP MEMORY Document Title Multi-Chip Package MEMORY 128M Bit Two Dual Bank 64M Bit NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark August 9, 2002 Preliminary 0.0 Initial Draft 0.1 Revised (UtRAM)	Original	KADxx0300B 2Mx16) 69-Ball 10MAX BA100 diode BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode	PDF
BA142 Abstract: No abstract text available Text: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K8Q2815UQB 128Mb 56TSOP) similar90000h-097FFFh 088000h-08FFFFh 080000h-087FFFh 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh BA142	PDF
K8P6415 Abstract: K8P32 K8P3215u K8P6415UQB K8P64 Text: Target Information FLASH MEMORY K8P6415UQB 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	K8P6415UQB 10MAX 48FBGA 48-PIN 1220F 047MAX K8P6415 K8P32 K8P3215u K8P6415UQB K8P64	PDF
Untitled Abstract: No abstract text available Text: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR	Original	K8C54 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H	PDF

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BA122 Price and Stock

Siemens 6AG19720BA122XA0

L-com Inc BA122

OMRON Industrial Automation NX-TBA122

Skyworks Solutions Inc 565CBA122M880ACG

Skyworks Solutions Inc 515BBA122M880BAG

BA122 Datasheets (4)

BA122 Datasheets Context Search

SAMSUNG MCP

Untitled

P-TFBGA63-0911-0

BA102

BA102

K8P2815UQB

BA258

samsung electronics ba41

BA379

Untitled

samsung ba92

BA1405

diode ba102

TC58FVM7B5BTG65

motorola 6800 8bit hardware architecture

06SEC

K8P6415UQB

TC58FVM7B5BTG65

BA254

1/Varicap ba122

BA100 diode

BA142

K8P6415

Untitled