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    JRH Electronics 805-061-16Z18-4BA316

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    JRH Electronics 805-061-16MT8-6BA316

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    JRH Electronics 805-061-16MT8-7BA316

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    JRH Electronics 805-061-16ZNU8-6BA316

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    JRH Electronics 805-061-16ZNU8-7BA316

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    BA316 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA316 Philips Semiconductors High-speed diodes Original PDF
    BA316 Mullard Quick Reference Guide 1977/78 Scan PDF
    BA316 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA316 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA316 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    BA316 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BA316 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BA316 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BA316 Unknown Cross Reference Datasheet Scan PDF
    BA316 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BA316 National Semiconductor Diode - Pro Electron Series Scan PDF
    BA316 National Semiconductor Diode Pro Electron Series Scan PDF
    BA316 Philips Semiconductors High-speed diodes Scan PDF
    BA316T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    BA316 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BA317

    Abstract: MAM246 BA316 BA318
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA316; BA317; BA318 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes BA316; BA317; BA318 FEATURES DESCRIPTION • Hermetically sealed leaded glass


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    PDF M3D176 BA316; BA317; BA318 DO-35) BA316, BA317, BA317 MAM246 BA316 BA318

    BA316

    Abstract: BA317 BA318 MAM246
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA316; BA317; BA318 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed diodes BA316; BA317; BA318


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    PDF M3D176 BA316; BA317; BA318 DO-35) BA316, BA317, BA316 BA317 BA318 MAM246

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


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    PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    C5V6 ph

    Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
    Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER


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    PDF 1N821 1N4733A 1N821A 1N4734A 1N823 1N4735A 1N823A C5V6 ph C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH

    Untitled

    Abstract: No abstract text available
    Text: UCC29900 www.ti.com SLUS923B – APRIL 2009 – REVISED JUNE 2010 Integral Cycle Controller Check for Samples: UCC29900 FEATURES 1 • • • • • • • • • • • Integral Cycle Control for High Efficiency Burst Mode Operation at all Load Levels


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    PDF UCC29900 SLUS923B

    BA512

    Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
    Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh


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    PDF K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379

    BA339

    Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


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    PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA339 BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204

    BA339

    Abstract: K8C1215ET BA507
    Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339 K8C1215ET BA507

    BA339

    Abstract: No abstract text available
    Text: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339

    ba508

    Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
    Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary


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    PDF K5L5628JT 115-Ball 80x13 ba508 BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


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    PDF K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns---

    BA379

    Abstract: BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258
    Text: Rev. 1.1, Sep. 2010 K8S1215ETC K8S1215EBC K8S1215EZC 512Mb C-die NOR FLASH 9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF K8S1215ETC K8S1215EBC K8S1215EZC 512Mb 64FBGA, 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh 0110000h-011FFFFh BA379 BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258

    BA339

    Abstract: ba406 K8F1315ETM
    Text: K8F12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original
    PDF K8F12 512Mb inh-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh 0090000h-009FFFFh 0080000h-008FFFFh BA339 ba406 K8F1315ETM

    ba508

    Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
    Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original
    PDF K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- ba508 BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329

    T20 96 diode

    Abstract: BA318 BA316 BA317 0D2T xfsm IEC134
    Text: b'IE ]> • ^ 5 3 ^ 3 1 0D2bl5b 2TT N AUER PHILIPS/DISCRETE IAPX BA316 BA317 BA318 10 V, 30 V and 50 V GENERAL PURPOSE DIODES Silicon p la n ar epitaxial diodes in DO-35 envelopes intended fo r g en e ral p u rp o se a p p li­


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    PDF bS3131 BA316 BA317 BA318 DO-35 BA316, BA317 BA318. BA316 T20 96 diode BA318 0D2T xfsm IEC134

    Untitled

    Abstract: No abstract text available
    Text: blE J> m bbS3131 Q02blSb 51T • APX BA316 BA317 N AMER PHILIPS/DISCRETE BA318 V y 10 V, 30 V and 50 V GENERAL PURPOSE DIODES Silicon p la n ar epitaxial diodes in DO-35 envelopes intended fo r g en e ral p u rp o se a p p li­


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    PDF bbS3131 Q02blSb BA316 BA317 BA318 DO-35 BA316, BA317 BA318.

    BA318

    Abstract: BA316 BA317
    Text: Philips Semiconductors Product specification High-speed diodes BA316; BA317; BA318 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass


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    PDF BA316; BA317; BA318 DO-35) BA316, BA317, BA318 711002b BA316 BA317

    BAV234

    Abstract: BAS616 diode BAV105 BAV991 1PS193 BAL74W "Philips Semiconductors" BAX DO-35 BAS678 BAW62 SOT23 PMBD914
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES ratings type number characteristics Vr max. V Ip max. (mA) BA220 BA221 BA316 BA317


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    PDF BA220 BA221 BA316 BA317 BA318 BAV10 BAV18 BAV19 BAV20 BAV21 BAV234 BAS616 diode BAV105 BAV991 1PS193 BAL74W "Philips Semiconductors" BAX DO-35 BAS678 BAW62 SOT23 PMBD914

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    BAS3590

    Abstract: BAY71 BA128 BA129 BA130 BA217 BA218 BA316 BA317 BA318
    Text: National Semiconductor NATL Âæ Diode Pro Electron Series 75 200 30 30 50 10 30 50 100 50 100 50 50 200 200 200 1.0 1.0 1.0 1.0 1.0 0.85 0.85 0.85 50 100 10 10 10 10 10 10 BAS16 BAS19 BAS20 BAS21 BAS29 BAS31 BAS35 75 100 150 200 90 90 90 1000 100 100 100


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    PDF BA128 DO-35 BA129 BA130 BA217 BA218 BAS3590 BAY71 BA316 BA317 BA318

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


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    PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032

    OT239

    Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
    Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to


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    PDF

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    BB106

    Abstract: BA280 BB205B BB205 diode ba280 BB205G BA102 sod-23 SOD-52 DIODE BA243
    Text: Diodes book 1 part 3 silicon whiskerless diodes Type No. £ Description 3 O Max. Reverse Recovery Tim e a c f a V rrm I frm Ir avi V (m A ) (m A | Cdmax V f (pF) (V ) m ax a t Ip trr If <mAl (ns) (m A ) Vr IV ) Hl ( f i) fa {m A) BA314 Low voltage stabiliser


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    PDF BA314 DO-35 BA316 BA317 BA318 BAV10 BAV18 BAV19 BB106 BA280 BB205B BB205 diode ba280 BB205G BA102 sod-23 SOD-52 DIODE BA243