T20 96 diode

Abstract: BA318 BA316 BA317 0D2T xfsm IEC134
Contextual Info: b'IE ]> • ^ 5 3 ^ 3 1 0D2bl5b 2TT N AUER PHILIPS/DISCRETE IAPX BA316 BA317 BA318 10 V, 30 V and 50 V GENERAL PURPOSE DIODES Silicon p la n ar epitaxial diodes in DO-35 envelopes intended fo r g en e ral p u rp o se a p p li­

BA317

Abstract: MAM246 BA316 BA318
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA316; BA317; BA318 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes BA316; BA317; BA318 FEATURES DESCRIPTION • Hermetically sealed leaded glass

BA3170

Contextual Info: Regulator ICs Trickle-charge IC for two-cell, lithium-ion batteries BA3170 The BA3170 is a trickle-charge IC developed for two-cell, lithium-ion batteries.The IC includes a charge control circuit, a charge output transistor, and an LED driver for showing the charging status.

Contextual Info: blE J> m bbS3131 Q02blSb 51T • APX BA316 BA317 N AMER PHILIPS/DISCRETE BA318 V y 10 V, 30 V and 50 V GENERAL PURPOSE DIODES Silicon p la n ar epitaxial diodes in DO-35 envelopes intended fo r g en e ral p u rp o se a p p li­

Contextual Info: Regulator ICs Trickle-charge IC for two-cell, lithium-ion batteries BA3170 The BA3170 is a trickle-charge IC developed for two-cell, lithium-ion batteries.The IC includes a charge control circuit, a charge output transistor, and an LED driver for showing the charging status.

Contextual Info: Regulator ICs Trickle-charge 1C for two-cell, lithium-ion batteries BA3170 T h e B A 3 1 70 is a tric k le -c h a rg e IC d e ve lo p e d fo r tw o -ce ll, lith iu m -io n b a tte rie s.T h e IC in clu d e s a ch a rg e co n tro l circuit, a c h a rg e o u tp u t tran sisto r, and an LED d riv e r fo r sh o w in g th e ch a rg in g status.

BA318

Abstract: BA316 BA317
Contextual Info: Philips Semiconductors Product specification High-speed diodes BA316; BA317; BA318 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass

BA316

Abstract: BA317 BA318 MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA316; BA317; BA318 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed diodes BA316; BA317; BA318

BAV234

Abstract: BAS616 diode BAV105 BAV991 1PS193 BAL74W "Philips Semiconductors" BAX DO-35 BAS678 BAW62 SOT23 PMBD914
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES ratings type number characteristics Vr max. V Ip max. (mA) BA220 BA221 BA316 BA317

tda5560

Abstract: TEA5550 TEA5560 BA317 MMK11E11 sft468 RADIO TUNING DIODE car radio circuit board layout
Contextual Info: D EV ELO PM EN T SA M PLE DATA TEA 5550 This in form atio n is d erived from d evelopm ent samples made available for evaluation. It does n ot necessarily im ply th at the device w ill go in to regular p ro du ction . AM C AR R A D IO R f E C E IV E R C IR C U IT

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

C5V6 ph

Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Contextual Info: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

BA512

Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
Contextual Info: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh

BA339

Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
Contextual Info: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

BA339

Abstract: K8C1215ET BA507
Contextual Info: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

BA339

Contextual Info: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

BAV46

Abstract: BAS46 cl8960 X-band doppler radar module Gunn Diode at power supply circuit doppler radar module Gunn Diode x-band BAV46 diode gunn diode radar module DO-23
Contextual Info: 7'¿fl OC X BAS46 X-BAND MIXER/DETECTOR DIODE Silicon S chottky barrier diode in DO-23 outline specially designed fo r use in Doppler radar systems and intruder alarms where low 1 /f noise and high sensitivity are required. May be used fo r both mixer and detector applications. This device is a direct replacement fo r the BAV46 and has an all-bonded

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

ba508

Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
Contextual Info: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary

Contextual Info: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

BA379

Abstract: BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258
Contextual Info: Rev. 1.1, Sep. 2010 K8S1215ETC K8S1215EBC K8S1215EZC 512Mb C-die NOR FLASH 9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed