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    BA55 Price and Stock

    Tai-Saw Technology Co Ltd TX0847BA5544

    24/1/2.5X2.0
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    DigiKey TX0847BA5544 Cut Tape 3,000 1
    • 1 $6.27
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    TX0847BA5544 Digi-Reel 3,000 1
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    • 10 $5.412
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    TX0847BA5544 Reel 3,000 3,000
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    STMicroelectronics STM32WBA55CGU6

    IC RF TXRX+MCU 802.15.4 48UFQFPN
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    DigiKey STM32WBA55CGU6 Tray 1,509 1
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    Avnet Americas STM32WBA55CGU6 Tray 200 15 Weeks 1,560
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    Mouser Electronics STM32WBA55CGU6 1,571
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    Newark STM32WBA55CGU6 Bulk 190 1
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    STMicroelectronics STM32WBA55CGU6 1,561 1
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    Chip1Stop STM32WBA55CGU6 Tray 130
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    EBV Elektronik STM32WBA55CGU6 16 Weeks 260
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    STMicroelectronics STM32WBA55UGI6

    IC RF TXRX+MCU 802.15.4 59UFBGA
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    DigiKey STM32WBA55UGI6 Tray 92 1
    • 1 $6.98
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    Avnet Americas STM32WBA55UGI6 150 15 Weeks 2,940
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    Mouser Electronics STM32WBA55UGI6 123
    • 1 $7.89
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    Newark STM32WBA55UGI6 Bulk 145 1
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    STMicroelectronics STM32WBA55UGI6 123 1
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    Chip1Stop STM32WBA55UGI6 Tray 150
    • 1 $3.57
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    Schneider Electric XB4BA55

    PUSH BUTTON, HARMONY XB4, 22 MM
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    DigiKey XB4BA55 Box 5 1
    • 1 $43.31
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    Mouser Electronics XB4BA55
    • 1 $43.12
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    Newark XB4BA55 Bulk 1
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    RS XB4BA55 Bulk 1 Weeks 1
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    STMicroelectronics NUCLEO-WBA55CG

    STM32 NUCLEO-64 DEVELOPMENT BOAR
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    DigiKey NUCLEO-WBA55CG Bulk 5 1
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    Avnet Americas NUCLEO-WBA55CG Box 80 1
    • 1 $73.75
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    Mouser Electronics NUCLEO-WBA55CG 117
    • 1 $62.5
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    Newark NUCLEO-WBA55CG Bulk 62 1
    • 1 $76.47
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    Avnet Silica NUCLEO-WBA55CG 79 53 Weeks 1
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    Chip1Stop NUCLEO-WBA55CG Bulk 75
    • 1 $59.8
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    Wuhan P&S NUCLEO-WBA55CG 2 1
    • 1 $39.22
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    • 100 $13.08
    • 1000 $11.77
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    Find more BA55 price and stock on Findchips.com

    BA55 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA555 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA555 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BA55 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    FPT-48P-M19

    Abstract: FPT-48P-M20 mbm28f800 MBM28F800TA 77ff
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


    Original     		PDF DS05-20841-4E 8/512K 9F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 48-pin 44-pin FPT-48P-M19 FPT-48P-M20 mbm28f800 MBM28F800TA 77ff

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112

    Untitled

    Abstract: No abstract text available
    Text: Mobile 3rd Generation Intel Core Processor Family, Mobile Intel® Pentium® Processor Family, and Mobile Intel® Celeron® Processor Family Datasheet, Volume 1 of 2 June 2013 Document Number: 326768-006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,


    Original     		PDF

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original     		PDF TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96

    SAMSUNG MCP

    Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
    Text: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary


    Original     		PDF K5A3x40YT 4Mx8/2Mx16) 512Kx8/256Kx16) 512tRDR 69-Ball 08MAX SAMSUNG MCP samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5

    555H

    Abstract: SST34HF3244
    Text: 32 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory SST34HF3244 / SST34HF3282 / SST34HF3284 SST34HF32x4x32Mb CSF + 4/8/16 Mb SRAM x16 MCP ComboMemory Data Sheet FEATURES: • Flash Organization: 2M x16 or 4M x8 • Dual-Bank Architecture for Concurrent


    Original     		PDF SST34HF3244 SST34HF3282 SST34HF3284 SST34HF32x4x32Mb SST34HF32x4: 24Mbit SST34HF3282: MO-210, 62-lfbga-LS-8x10-400mic-4 62-ball 555H

    BA102

    Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
    Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for


    Original     		PDF TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65

    ba60

    Abstract: TC58FVM5B2A TC58FVM5T2A TC58FVM5T3AFT65 TC58FVM5
    Text: TC58FVM5 T/B (2/3) A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable


    Original     		PDF TC58FVM5 32MBIT TC58FVM5T2A/B2A/T3A/B3A 33554432-bit, ba60 TC58FVM5B2A TC58FVM5T2A TC58FVM5T3AFT65 TC58FVM5

    Ba-5590

    Abstract: uav design BA5590 uav design specification uav sensors radar dsp processor radar sensor specification SPACE POWER ELECTRONICS EP3C120 Altera PCMCIA
    Text: White Paper Addressing SWaP Challenges in Military Platforms With 65-nm FPGAs and Structured ASICs Introduction Now more than ever, size, weight, and power SWaP must be managed and reduced across virtually all military and aerospace applications to improve operational efficiency and logistics, increase mission life, and reduce the total cost


    Original     		PDF 65-nm Ba-5590 uav design BA5590 uav design specification uav sensors radar dsp processor radar sensor specification SPACE POWER ELECTRONICS EP3C120 Altera PCMCIA

    Untitled

    Abstract: No abstract text available
    Text: 1 1232456773849AB732 4CDE457FC7A45C74334D2F37F4FCB3 5 12 5 4 4 4 5 5 4 5 9AB7324CDE457FC7A41147F4 7A4 4 4 459A#$E%555522&5'$E#$E55 $F ED(5 (* 5 5 5 5 5 5 5 4 567897A94BC76DACEF4 4 15 547864 15 :EFA.F(.5$F(ED(5)(*55


    Original     		PDF 1232456773849AB732 4CDE457FC7A4 2F37F4 9AB732 4CDE457FC7A41 567897A94BC76DACEF4 5B55B 5EB522 15FE5 15FE573

    Untitled

    Abstract: No abstract text available
    Text: 1 1 1 1 1 1 1  8!"F6#8B7"F7$1 1 5 5 4 4 4 4 4 4 4 4 567689AA745BC5B4DEFA4EA844 A761446444 4 !"7#4$%&21&'4 7"744 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5*4 !!E+A764 !5 5 ""235#FE$%57$CD&5'(ED53355


    Original     		PDF 1234567894A48BC77AD8E7A418F 567689AA745BC5B4DEFA A7614 BAD555 5556B* 12345678942A3B529CDEFA A1224 E87A9CA EFA84A B578EA72FA5E

    TH50VSF3581AASB

    Abstract: A12F TH50VSF3580AASB
    Text: TH50VSF3580/3581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3580/3581AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original     		PDF TH50VSF3580/3581AASB TH50VSF3580/3581AASB 608-bit 432-bit 69-pin 3/3581AASB XXXh/60h) BPA/60h) TH50VSF3581AASB A12F TH50VSF3580AASB

    SST36VF3203

    Abstract: 555H BKX555H SST36VF3204 ba4932
    Text: 32 Mbit x8/x16 Concurrent SuperFlash SST36VF3203 / SST36VF3204 SST36VF3201C / 1602C32Mb (x8/x16) Concurrent SuperFlash Advance Information FEATURES: • Organized as 2M x16 or 4M x8 • Dual Bank Architecture for Concurrent Read/Write Operation – 32 Mbit Bottom Sector Protection


    Original     		PDF x8/x16) SST36VF3203 SST36VF3204 SST36VF3201C 1602C32Mb SST36VF3203: SST36VF3204: S71270-01-000 555H BKX555H SST36VF3204 ba4932

    LTC1962EMS8-2.5

    Abstract: LM136-2.5
    Text: 1 1232456773849AB732 4CDE457FC7A45C74334D2F37F4FCB3 5 12 5 4 4 4 5 5 4 5 9AB7324CDE457FC7A41147F4 7A4 4 4 459A#$E%525525&33'5 $E#$E55 $F ED)5*)+ 5 5 5 5 5 5 5 4 567897A94BC76DACEF4 4 15 547864 15 :EFA/F)/5$F)ED)5*)+5-E5*FD";0FED5


    Original     		PDF 1232456773849AB732 4CDE457FC7A4 2F37F4 9AB732 4CDE457FC7A41 567897A94BC76DACEF4 5EB52 5B65B E25B5 0050BF/5D66 LTC1962EMS8-2.5 LM136-2.5

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh

    samsung ba92

    Abstract: BA137 k8p3215
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215

    diode ba102

    Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
    Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641

    29F800TA

    Abstract: 29f800ba MBM29F800 29F800T
    Text: • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP I (Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type)


    OCR Scan     		PDF 48-pin 44-pin F9811 29F800TA 29f800ba MBM29F800 29F800T