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    BAX 53 Search Results

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    BAX 53 Price and Stock

    Skyworks Solutions Inc Si5391B-Axxxxx-GM

    Clock Generators & Support Products Factory pre-programmed: Clock Generator: 10-outputs up to 350 MHz; Integer+Fractional synthesis
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    Mouser Electronics Si5391B-Axxxxx-GM
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    • 1000 $13.96
    • 10000 $13.96
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    Renesas Electronics Corporation UPD78F0534AGA-HAB-AX

    8-bit Microcontrollers - MCU 78K0/Kx2 48K+2 -40to85 64QFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics UPD78F0534AGA-HAB-AX
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    Renesas Electronics Corporation UPD78F0535AGA-HAB-AX

    8-bit Microcontrollers - MCU 8BIT MICROCONTROLLER, 78KO/KX2
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    Mouser Electronics UPD78F0535AGA-HAB-AX
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    Renesas Electronics Corporation UPD78F0537AGA-HAB-AX

    8-bit Microcontrollers - MCU 8BIT MICROCONTROLLER 78K0/KX2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics UPD78F0537AGA-HAB-AX
    • 1 -
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    • 1000 $4.71
    • 10000 $4.71
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    Skyworks Solutions Inc Si5391B-Axxxxx-GMR

    Clock Generators & Support Products Factory pre-programmed: Clock Generator: 12-outputs up to 350 MHz; Integer+Fractional synthesis
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics Si5391B-Axxxxx-GMR
    • 1 -
    • 10 -
    • 100 -
    • 1000 $13.15
    • 10000 $13.15
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    Find more BAX 53 price and stock on Findchips.com

    BAX 53 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAX53 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BAX53 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BAX53 SGS-Ates Shortform Data Book 1977/78 Short Form PDF
    BAX53 SGS-Ates Semiconductor Data Book 1976/77 Scan PDF

    BAX 53 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bax 50

    Abstract: No abstract text available
    Text: 16 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 4Mbit 256K x 16 / 512K x 8 Flash – Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash


    Original     		PDF 12Mbit 1536K LE28DW1621T-80T xxxx-19/20 xxxx-20/20 bax 50

    Untitled

    Abstract: No abstract text available
    Text: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 6Mbit 384K x 16 / 768K x 8 Flash – Bank2: 2Mbit (128K x 16 / 256K x 8) Flash


    Original     		PDF LE28DW8163T-80T xxxx-19/20 xxxx-20/20

    LE28DW3212AT-80B

    Abstract: sanyo sax
    Text: 32 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 16Mbit 1024K x 16 / 2048K x 8 Flash – Bank2: 16Mbit (1024K x 16 / 2048K x 8) Flash


    Original     		PDF 16Mbit 1024K 2048K LE28DW3212AT-80B 28DW8163T\F19 xxxx-19/19 LE28DW3212AT-80B sanyo sax

    F14E

    Abstract: F12E Sakata F13E LE28BW168T 2596H
    Text: 16 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations Sp ec ifi ca tio ns LE28BW168T • • Separate Memory Banks by Address Space – Simultaneous Read and Write Capability • Superior Reliability – Endurance: 10,000 Cycles


    Original     		PDF LE28BW168T 16141\168T\ xxxx-20/20 F14E F12E Sakata F13E LE28BW168T 2596H

    CEPO

    Abstract: A723 b537 533B P7A1 W316
    Text: 532,- 5645 ;:A2< 7/>05694 <27/B 3FCQROFP S v/B167<5 @3:/G S baam AE7B167<5 1/>/07:7BG S m11=@27<5 B= uqo gcaff^dbk*oe Zo=<B/1Bke_f9mln3/@/0:3 :=/2kba9m :=/2^1C@@3<B[ S mo^D=:B/53 2@7D7<5 7A 43/A70:3 S e9+ 273:31B@71 AB@3<5B6 Z03BE33< 1=7: /<2 1=<B/1BA[ S q<D7@=<;3<B/: 4@73<2:G >@=2C1B Z|=t} 1=;>:7/<B[


    Original     		PDF 43/A70 Z03BE33< 71/B7 2/B/A633B 317471/B7 AC0831B E6716 CAB71 CEPO A723 b537 533B P7A1 W316

    f16e

    Abstract: No abstract text available
    Text: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations Sp ec ifi ca tio ns LE28DW8102T • • Separate Memory Banks by Address Space – Simultaneous Read and Write Capability • Superior Reliability – Endurance: 10,000 Cycles


    Original     		PDF LE28DW8102T 16141\168T\ xxxx-19/19 f16e

    CD Z44

    Abstract: M1127 P7A1 A723 bca 07 BAA 9K 3B71 B637
    Text: 532,- 5645 ;:A2< 7/>05694 <27/B 3FCQROFP S v/B167<5 @3:/G S baam AE7B167<5 1/>/07:7BG S m11=@27<5 B= uqo gcaff^dbk*oe Zo=<B/1Bke_f9mln3/@/0:3 :=/2kba9m :=/2^1C@@3<B[ S mo^D=:B/53 2@7D7<5 7A 43/A70:3 S e9+ 273:31B@71 AB@3<5B6 Z03BE33< 1=7: /<2 1=<B/1BA[ S q<D7@=<;3<B/: 4@73<2:G >@=2C1B Z|=t} 1=;>:7/<B[


    Original     		PDF 43/A70 Z03BE33< 71/B7 2/B/A633B 317471/B7 AC0831B E6716 CAB71 CD Z44 M1127 P7A1 A723 bca 07 BAA 9K 3B71 B637

    Reduced-Latency-DRAM

    Abstract: HYB18RL25616AC HYB18RL25632AC
    Text: HYB18RL25632AC HYB18RL25616AC Graphics & Speciality DRAMs 256 Mbit DDR Reduced Latency DRAM Version 1.60 July 2003 HYB18RL25616/32AC 256 Mbit DDR Reduced Latency DRAM Edition Jun. 2002 This edition was realized using the software system FrameMaker. Published by Infineon Technologies,


    Original     		PDF HYB18RL25632AC HYB18RL25616AC HYB18RL25616/32AC 300MHz 250MHz 200MHz Reduced-Latency-DRAM HYB18RL25616AC HYB18RL25632AC

    HYB18RL25616AC

    Abstract: HYB18RL25632AC Boundary Scan JTAG Logic RLDRAM
    Text: HYB18RL25632AC HYB18RL25616AC Graphics & Speciality DRAMs 256 Mbit DDR Reduced Latency DRAM Version 1.42 Nov. 2002 HYB18RL25616/32AC 256 Mbit DDR Reduced Latency DRAM Edition Jun. 2002 This edition was realized using the software system FrameMakerâ. Published by Infineon Technologies,


    Original     		PDF HYB18RL25632AC HYB18RL25616AC HYB18RL25616/32AC 300MHz 250MHz 200MHz HYB18RL25616AC HYB18RL25632AC Boundary Scan JTAG Logic RLDRAM

    MT49H16M18C

    Abstract: No abstract text available
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C

    smd dk qk

    Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C smd dk qk SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM

    smd marking codes BA5

    Abstract: MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb MT49H16M18C smd marking codes BA5

    SMD d1c

    Abstract: SMD MARKING CODE ACY qkx capacitor smd codes marking A21 MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C SMD d1c SMD MARKING CODE ACY qkx capacitor smd codes marking A21

    MT49H16M18

    Abstract: No abstract text available
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb output0006, MT49H8M36 MT49H16M18

    MT49H16M18

    Abstract: No abstract text available
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb output0006, MT49H8M36 MT49H16M18

    MARKING H1 AMP

    Abstract: MT49H16M18
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb output0006, MT49H8M36 MARKING H1 AMP MT49H16M18

    BAX53

    Abstract: BAX52 fast recovery epitaxial diode Bridge bax 53
    Text: BAX 52 BAX 53 SILICON PLANAR DIODES U L T R A F A S T D IO D E B R ID G E A S S E M B L IE S The BAX 52 and BAX 53 are silicon planar epitaxial diode bridges in Jedec T O -12 and TO-72 metal cases respectively. They are designed for very high speed applications.


    OCR Scan     		PDF BAX52 BAX52 BAX53 BAX53 fast recovery epitaxial diode Bridge bax 53

    BAX12

    Abstract: bay43
    Text: Erosemi corp/ uatertoun 5üe d Switching <1347^3 0012377 524 • U N I T BAY41-BAY43 BAY60 BAX 12 FEATURES • Metallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers Metallurgical Bonding and Is very popular for general purpose switching applications.


    OCR Scan     		PDF DO-35 BAY41-BAY43 BAY60 BAY41 BAY42 BAY43 225mA 100mA 200mA 400mA BAX12

    itt 3906

    Abstract: NSL-28AA 3906 NSL-28 silonex NSL
    Text: S IL O N E X IN C 47E D Ô2SS271 00Q 03SI, fl • SXI NSL-28 & NSL-28AA 0PT0IS0LAT0RS CO SILONEX 1 NSL-28. TEST CONDITIONS CHARACTERISTICS . MIN. TYP, BAX. . HIH. HSl~28AA TYP. HAX. . . UNITS . -LED* If . ttox f«d current VF F o m r d voltage IF=16aA IR


    OCR Scan     		PDF 2SS271 0351a NSL-28 NSL-28AA NSL-28. HSL-28AA 500ance itt 3906 3906 NSL-28 silonex NSL

    Untitled

    Abstract: No abstract text available
    Text: AMP Aerospace/R uggedized Printed C ircuit Board Connectors Catalog 296350 issued 9-97 Extended M ini-Bax Pin Header Assem blies Style I H o u sing M a t e r ia l— L iq u ic c ry s ta l p o ly m e r C o n tact M a te r ia l an d F in is h — B ra ss p er Q Q -B -6 2 B p a tari 0 0 0 0 5 0


    OCR Scan     		PDF

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


    OCR Scan     		PDF

    BAV90

    Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
    Text: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17


    OCR Scan     		PDF 0D12DEÃ BA243 BC146/02 BC849B/C BC338 BC818 BA314 BAS17 BCF32/33 BCX20 BAV90 bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd