Untitled
Abstract: No abstract text available
Text: l-1_ N AMER PHILIPS/DISCRETE OLE D bbS3i31 D O i m i T I Ofl68 y l T - a s ' - i sr THYRISTORS The OT168 devices are glass-passivated thyristors featuring sensitive gate triggering as low as 200 pA. Applications include temperature control, motor control, regulators in transformerless power supply
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bbS3i31
Ofl68
OT168
MCR72â
OT168
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Untitled
Abstract: No abstract text available
Text: N AilER PHILIPS/DISCRETE SSE D bbS3i31 0020b35 □ • PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bbS3i31
0020b35
BUK555-50A
BUK555-50B
BUK555
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BGY57
Abstract: BGY56 6-32UNC-2A
Text: • bbS3i31 00105^5 3 ■ N AMER PHILIPS/DISCRETE BGY56 BGY57 2SE D T -i^ -o ^ -o y HYBRID V.H.F. PUSH-PULL AMPLIFIER MODULES Hybrid amplifier modules intended for CATV systems. Q UICK REFERENCE DATA Source impedance and load impedance to N -J N Frequency range
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LL53131
BGY56
BGY57
S11-22
BGY57
6-32UNC-2A
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philips OF432
Abstract: of432 BY224 BY224-400 J90D 56379
Text: I N AMER P H I L I P S / D I S C R E T E TDD bbS3i31 D JC MAINTENANCE TYPES 90D D 10140 DDlOma □ BY224 SERIES T - 3 l3 - o £ SILICON BRIDGE RECTIFIERS Ready-for-use mains full-wave bridges, each consisting of four double-diffused silicon diodes, in a plastic encapsulation. The bridges are intended for use in equipment supplied from mains w ith r.m.s.
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bbS3i31
BY224
BY224-
philips OF432
of432
BY224-400
J90D
56379
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Untitled
Abstract: No abstract text available
Text: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is
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BUZ384
bbS3i31
00147T0
BUZ384
T-39-13
bb53T31
bb53T31
Q0147TS
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Untitled
Abstract: No abstract text available
Text: N A PIER PHILIPS/DISCRETE OLE D 1,^53=131 DQ110E3 1 BR220 SERIES r - 3 5 " - OS- DUAL BREAKOVER DIODES The BR220 is a range of monolithic diffusion-isolated glass-passivated dual bidirectional breakover diodes in the TO-220AB outline, available in a + /— 12% tolerance series of nominal breakover voltage.
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DQ110E3
BR220
O-220AB
bbS3T31
0011D3S
bb53131
001103b
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transistor k 3728
Abstract: BLY90 A-04 TRIMMER capacitor 160 pF 270j capacitor SOT-55 philips Trimmer 60 pf
Text: — - ; — 5 - : _ N AMER P H IL IP S /D IS C R E T E 86D 0 1 92 8 . . — _ l i _ _ OLE I D •
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BLY90
transistor k 3728
BLY90
A-04
TRIMMER capacitor 160 pF
270j capacitor
SOT-55
philips Trimmer 60 pf
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BLY93A
Abstract: D 1062 transistor Trimmer 10-60 pf IEC134 transistor ao yl 1060
Text: N AMER PHILIPS/DISCRETE 86D GbE D 01968 D Bi b 353^31 001450t. 2 T^~23-f( " “ BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r use inclass-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 28 V . The transistor is resistance stabilized. Every tran
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001450t.
BLY93A
OT-56.
Tmb-25
BLY93A
D 1062 transistor
Trimmer 10-60 pf
IEC134
transistor ao
yl 1060
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BF990AR
Abstract: No abstract text available
Text: • t.bS3T31 0G24737 TU' B A P X BF990AR b7E T> N AMER PHILIPS/DISCRETE SILICON N-CHANNEL DUAL GATE MOS-FET D epletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143R m ic ro m in ia tu re envelope w ith source and substrate interconnected, intended fo r U HF a p p lications, such as U H F television tuners and
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bS3T31
Q024737
BF990AR
OT143R
BF990AR
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transistor cq 449
Abstract: BLV62 MRA322 MBA970 8w RF POWER TRANSISTOR NPN C1663 MAPX
Text: N AUER PH ILI PS/DISCRETE bT E Philips Semiconductors_ ]> • bbSBTBl GDETGBB QQ1 H A P X _Product specification UHF linear push-pull power transistor FEATURES MODE OF OPERATION c.w. class-AB f MHz 860 • Gold metallization ensures
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BLV62
OT262A2
OT262A2
MRA322
MRA377
transistor cq 449
BLV62
MRA322
MBA970
8w RF POWER TRANSISTOR NPN
C1663
MAPX
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BUS23
Abstract: t-33-15 BISCR BUS23B BUS23C
Text: [[ N AMER P H I L I P S / D I S C R E T E asE D bbSB'IBl C 018751 3 • J BUS23 SERIES s. -r-2 3 -1 6 * SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in aTO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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bb53131
BUS23
T--23-I6"
BUS23B
BUS23B
BUS23C
BUS23B;
BUS23C.
t-33-15
BISCR
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Untitled
Abstract: No abstract text available
Text: r'r N AMER PHILIPS/DISCRETE -t- bbS3T31 0017404 T •' ESE D 2N2221A T- 3s - n SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistors in a TO-18 metal envelope with the collector connected to the case. They are primarily intended for high speed switching. QUICK REFERENCE DATA
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bbS3T31
2N2221A
100kfJ
bbS3i31
1N916.
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M3335
Abstract: DIODE 158 BYP20 M3331 M3332 BYH2
Text: N AMER PHI LIPS/DISCRETE ~ \ [ bbS3131 GG22357 fi • BYKklU ¡SERIES 2 SE D ■nos-17 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse
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bbS3131
nos-17
M1246
M3335
DIODE 158
BYP20
M3331
M3332
BYH2
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diode BYX25 600
Abstract: BYX25-600 RECTIFIER DIODES PHILIPS BYX25 BYX25-600R BYX25/600 BYX25 BYX25-1400 BYX25-1400R IEC134 diodes BYX25
Text: N AMER P H I L I P S / D I S C R E T E BYX25 SERIES ^1,53=131 00227=11 2 • 25E D 7 ^o m 9 CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended fo r power rectifier applications. The series consists of the following types:
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BYX25
BYX25-600
BYX25-1400.
BYX25-600R
BYX25-1400R.
BYX25-
Tj-17
diode BYX25 600
RECTIFIER DIODES PHILIPS BYX25
BYX25/600
BYX25-1400
BYX25-1400R
IEC134
diodes BYX25
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