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    Eaton Corporation ECN1811CBC-R63/C

    Motor Drives SZ1 COM FUS DS 30A N1
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    Mouser Electronics ECN1811CBC-R63/C
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    TT electronics / BI Technologies BCR1/8-102JT

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    Bristol Electronics BCR1/8-102JT 6,551
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    TT electronics / BI Technologies BCR1/8-1301FT

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    Bristol Electronics BCR1/8-1301FT 5,670
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    TT Electronics Resistors BCR1/81001FT

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    Bristol Electronics BCR1/81001FT 5,000
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    BECKHAM BCR1 8-103JT

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    Bristol Electronics BCR1 8-103JT 5,000
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    BCR 181 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    151bc

    Abstract: 560BC 270BCR050K 101BCR050K 220BC 220BCR050K 141bcr 68 n750 capacitor
    Text: BCR +85°C Temperature Stable Ceramic Disc Capacitors FEATURES • Stable Temperature Characteristics ■ Capacitance Range: 1 pF to 680 pF ■ Small Size SPECIFICATIONS Capacitance Tolerance 10 pF: ±0.5 pF D : 12 pF: ±10% (K) Operating Temperature Range


    Original     		PDF N1000, 50WVDC N1BCR050K 151bc 560BC 270BCR050K 101BCR050K 220BC 220BCR050K 141bcr 68 n750 capacitor

    221BCR050K

    Abstract: 471BCR050K N1000 5802 300bcr050k 100BCR050K 500BCR050K
    Text: BCR +85°C Temperature Stable Ceramic Disc Capacitors FEATURES • Stable Temperature Characteristics ■ Capacitance Range: 1 pF to 680 pF ■ Small Size SPECIFICATIONS ≤10 pF: ±0.5 pF D : Capacitance Tolerance ≥12 pF: ±10% (K) Operating Temperature Range


    Original     		PDF N1000, 50WVDC 361BCR050K 371BCR050K 391BCR050K 401BCR050K 471BCR050K 501BCR050K 561BCR050K 601BCR050K 221BCR050K 471BCR050K N1000 5802 300bcr050k 100BCR050K 500BCR050K

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    c639

    Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    Original     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    12V 40W Fluorescent Lamp Driver circuit Diagram

    Abstract: 3b0365 230v 40w fluorescent lamp inverter circuit Ac 230v to Dc 12v led driver with pwm dimming 3B0365JG ICB1FL02G dimmer 230V circuit diagram Led driver 100W schematic power supply driver led 80W schematic 12v hid ballast ic
    Text: Efficient Lighting Complete Solutions for Driving LEDs and Lamps [ www.infineon.com/lighting ] 2 Contents Product Roadmaps 04 Lighting Applications 06 General and Industrial Lighting 08 Linear LED Drivers 10 DC/DC LED Drivers 15 Off-Line LED Drivers 19


    Original     		PDF

    2907A PNP bipolar transistors

    Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT

    IS66WVD2M16ALL

    Abstract: CellularRAM 66WVD2M16ALL
    Text: IS66WVD2M16ALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst


    Original     		PDF IS66WVD2M16ALL IS66WVD2M16ALL 32Mbit -40oC 2Mx16 IS66WVD2M16ALL-7010BLI IS66WVD2M16ALL-7008BLI 54-ball CellularRAM 66WVD2M16ALL

    IS66WVD4M16ALL

    Abstract: CellularRAM 66WVD4M16ALL
    Text: IS66WVD4M16ALL 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst


    Original     		PDF IS66WVD4M16ALL IS66WVD4M16ALL 64Mbit -40oC 4Mx16 IS66WVD4M16ALL-7010BLI IS66WVD4M16ALL-7008BLI 54-ball CellularRAM 66WVD4M16ALL

    Untitled

    Abstract: No abstract text available
    Text: 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		PDF MT45W256KW16BEGB 16-word 09005aef8329f3e3 09005aef82e419a5

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    A192

    Abstract: P24Z
    Text: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		PDF MT45W2MW16BGB 16-word 09005aef82832fa2/Source: 09005aef82832f5f A192 P24Z

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		PDF MT45W256KW16BEGB 16-word 09005aef8329f3e3/Source: 09005aef82e419a5

    psram

    Abstract: No abstract text available
    Text: Preliminary‡ 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		PDF MT45W2MW16BGB 16-word 09005aef82832fa2 09005aef82832f5f psram

    IS66WVC4M16ALL

    Abstract: CellularRAM 66WVC4M16ALL
    Text: IS66WVC4M16ALL IS67WVC4M16ALL 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several


    Original     		PDF IS66WVC4M16ALL IS67WVC4M16ALL 64Mbit -40oC 4Mx16 IS66WVC4M16ALL-7010BLI IS66WVC4M16ALL-7008BLI CellularRAM 66WVC4M16ALL

    Untitled

    Abstract: No abstract text available
    Text: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		PDF MT45W2MW16BGB 16-word 09005aef82832fa2 09005aef82832f5f

    IS66WVC4M16ALL-7010BLI

    Abstract: No abstract text available
    Text: IS66WVC4M16ALL 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several


    Original     		PDF IS66WVC4M16ALL IS66WVC4M16ALL 64Mbit -40oC 4Mx16 IS66WVC4M16ALL-7010BLI IS66WVC4M16ALL-7008BLI 54-ball

    Untitled

    Abstract: No abstract text available
    Text: IS66WVD2M16ALL Preliminary Information 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a


    Original     		PDF IS66WVD2M16ALL IS66WVD2M16ALL 32Mbit -40oC 2Mx16 IS66WVD2M16ALL-7013BLI IS66WVD2M16ALL-7010BLI IS66WVD2M16ALL-7008BLI 54-ball

    Untitled

    Abstract: No abstract text available
    Text: IS66WVD4M16ALL Advanced Information 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a


    Original     		PDF IS66WVD4M16ALL IS66WVD4M16ALL 64Mbit -40oC 4Mx16 IS66WVD4M16ALL-7013BLI IS66WVD4M16ALL-7010BLI IS66WVD4M16ALL-7008BLI 54-ball

    103GCR050M

    Abstract: No abstract text available
    Text: BCR/GCR GMR/GQR Ceram ic Disc Selector Guide DESCRIPTION CAPACITANCE VOLTAGE CAPACITANCE TOLERANCE TEMPERATURE COEFFICIENT BCR T e m p era ture S ta b le 1 p f to 6 8 0 pf 50 W VD C ±10% Y5F GCR G e n e ra l P u rp o s e .001 M F D to .1 M F D 50 W VD C TYPE


    OCR Scan     		PDF 102GQR500Z 103GQR500Z 103GCR050M

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN

    BDP 284

    Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
    Text: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    OCR Scan     		PDF 3-03W 4-03W 5-03W Q62702-A829 Q62702-A859 Q62702-A950 Q62702-A952 Q62702-A608 Q62702-A718 Q62702-A687 BDP 284 BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529