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    BD 649 Search Results

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    BD 649 Price and Stock

    Bourns Inc BD649-S

    TRANS NPN DARL 100V 8A TO220
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    SEI Stackpole Electronics Inc RNF18FBD649K

    RES 649K OHM 1% 1/8W AXIAL
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    SEI Stackpole Electronics Inc RNF14FBD649R

    RES 649 OHM 1% 1/4W AXIAL
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    SEI Stackpole Electronics Inc RNF18FBD649R

    RES 649 OHM 1% 1/8W AXIAL
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    SEI Stackpole Electronics Inc RNF14FBD649K

    RES 649K OHM 1% 1/4W AXIAL
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    BD 649 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD649 Bourns NPN SILICON POWER DARLINGTONS Original PDF
    BD649 Comset Semiconductors Silicon NPN Darlington Power Transistors Original PDF
    BD649 Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BD649 Power Innovations NPN SILICON POWER DARLINGTON Original PDF
    BD649 General Electric 8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. Scan PDF
    BD 649 Infineon Technologies TRANS DARLINGTON NPN 100V 8A 3TO-220AB Scan PDF
    BD649 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD649 Mullard Quick Reference Guide 1977/78 Scan PDF
    BD649 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BD649 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD649 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD649 Unknown Transistor Replacements Scan PDF
    BD649 Unknown Transistor Replacements Scan PDF
    BD649 Unknown Cross Reference Datasheet Scan PDF
    BD649 Unknown Transistor Replacements Scan PDF
    BD649 Unknown Transistor Replacements Scan PDF
    BD649 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BD649 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD649 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD649 Unknown Shortform Transistor Datasheet Guide Short Form PDF

    BD 649 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CHN 749

    Abstract: CHN 647 CHN 648 CHN 649 CHN 948 B0647 CHN 025 F799 li 1766 chn 64
    Text: 74C{},|,3/ >;861 >?.?2 =28.D /IGS7;0 3IFUVSIT \ \ \ \ \ \ \ \ \ Gcf_ Ni@ F799:>7 DQD68667667?9< :666V ^c_f_]nlc] mnl_hanb Pbini cmif[ncih Cocfn3ch mho\\_l Z_li ]limm il l[h^ig nolh3ih TRJBD BD ionjon P[h_f giohn ED il BD ]ihnlif Wcnb LFE ch^c][nil il hin Fhpclihg_hn[f jlin_]ncih jli^o]n [p[cf[\f_


    Original
    PDF DQD68667667 KHX37 9398VED2 776VBD2 886VBD 666Vlgm ggX884 98VED /776r CHN 749 CHN 647 CHN 648 CHN 649 CHN 948 B0647 CHN 025 F799 li 1766 chn 64

    SiSm672

    Abstract: attansic f1 sis968 asus t12c J6001 Attansic l1 rlt8201bl Asus SiS307ELV INVERTER BOARD Asus A6
    Text: 5 4 3 2 1 X51C Main BD. R1.0 BLOCK DIAGRAM CLOCK GEN. ICS9LPR363CGLF-T D Merom CPU D PAGE 29 FAN + Thermal sensor 478B uFCPGA PAGE 50 PAGE 3,4 FSB 800 MHz LVDS SiS307ELV PAGE 46 TV PAGE 45 167 BGA SiSM672 PAGE 25 DDR2 667MHz PAGE 7,8,9 CRT 847 TEBGA PAGE 10,11,12,13,14,15,16


    Original
    PDF ICS9LPR363CGLF-T SiS307ELV SiSM672 667MHz SiS968 RLT8201BL-10/100 ALC660 R5C832 MIC5235 SI4800BDY attansic f1 sis968 asus t12c J6001 Attansic l1 rlt8201bl Asus INVERTER BOARD Asus A6

    X51L

    Abstract: 12c5202 Asus T0327 C3203 12G17000004J C0820 diode ICS9LPR363DGLF-T MW772 C0821
    Text: 5 4 3 2 1 X51L Main BD. R2.0 BLOCK DIAGRAM CLOCK GEN. ICS9LPR363CGLF-T D D Merom CPU PAGE 29 FAN + Thermal sensor 478B uFCPGA PAGE 3,4 PAGE 50 FSB 800 MHz LVDS PAGE 46 CRT CRESTLINE 960GL PAGE 45 SiI1368 SDVO to LPFQ48 DVI DVI PAGE 45 C DDR-II SO-DIMM X 2


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    PDF ICS9LPR363CGLF-T SiI1368 LPFQ48 960GL 667MHz ALC660 10/100LAN RTL8100CL PMN45EN FDW2501 X51L 12c5202 Asus T0327 C3203 12G17000004J C0820 diode ICS9LPR363DGLF-T MW772 C0821

    C3855

    Abstract: EC-ITE8752 C3854 M1101 d8107 IT8750E ASUS G41 asus k50 ASUS CX1114
    Text: 5 4 3 2 1 T53S Main BD. R1.2 Block Diagram CLOCK GEN. ICS9LPR363CGLF-T Merom CPU LV / ULV D PAGE 29 D 479 FBGA FAN + Thermal sensor PAGE 3,4 LVDS FSB 800/533 MHz PAGE 50 PAGE 46 Nvidia NB8P-GS + 256MB CRT PAGE 45 PCI-E 16X Crestline PM965 DDR2 533/667MHz DDR-II


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    PDF ICS9LPR363CGLF-T 256MB PM965 533/667MHz RTL8111C ALC888S SI9183 ISL6227 SI4336 MAX8632 C3855 EC-ITE8752 C3854 M1101 d8107 IT8750E ASUS G41 asus k50 ASUS CX1114

    BUX 127

    Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
    Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B


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    PDF BD244B BD379 BD380 BD434 BD435 BD440 BD681 BD682 BD712 BD905 BUX 127 bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140

    BO 649

    Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
    Text: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington


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    PDF 0235bQS T-33-29 OP-66) 643/BD 645/BD BD643. 0QQ43 T-33-29 BD647 BO 649 BD 104 darlington bd 645 TOP-66 b 647 c BD 649 BD64S Q62702-D376 BD 104 NPN

    BD 649

    Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
    Text: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington


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    PDF fl23SLQS T-33-29 OP-66) 643/BD 645/BD BD647. BD843, BD645. BD647, BD 649 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65

    B0646

    Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
    Text: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington


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    PDF fl23Sb05 DQ43CI1 T-33-31 OP-66) 644/BD BD648, BD644. BO646. BO648. BD660 B0646 BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660

    BD 649

    Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
    Text: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


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    PDF

    bd 640

    Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
    Text: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington


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    PDF 23SbOS DQ043C T-33-31 OP-66) U4J94 BD644, BD648, BD650 bd 640 TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650

    BD 650

    Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
    Text: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


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    PDF

    BD699

    Abstract: BD595 N6034 bd697 BD609 BD588 BD587 bd561 MJE34 pnp BD698
    Text: N PN PN P l e = 3.0 A. 2N4921 2N4918 v C EO V olts Hf e @ 'c Am p V C E sat @ 'C V o lts Am p fT MHz PD Watts Case 40 20/100 0.5 0.6 1.0 3.0 30 77 M JE 3 1 M JE 3 2 40 25/- 1.0 1.2 3.0 3.0 40 77R BD 17 5 BD 17 6 45 15/— 1.0 0.8 1.0 3.0 30 77 BD 57 5 BD 5 7 6


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    PDF 2N4921 2N4918 MJE31 BD175 BD575 BD576 BD177 2N4922 2N4919 MJE31A BD699 BD595 N6034 bd697 BD609 BD588 BD587 bd561 MJE34 pnp BD698

    BDX69

    Abstract: transistor handbook BDX68 BDX68A BDX68C BDX69B
    Text: ¡A-ISp 2 .5 8 BDX69; 69A BDX69B; 69C JV DARLINGTON POWER T R A N SIST O R S N-P-N Darlingtons for audio output stages and general amplifier and switching applications. In TO-3 envelope. P-N-P complements are BD X68, 8D X6 8A , BD X 6 8 8 and BD X 68 C . Q U IC K R E F E R E N C E D A T A


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    PDF BDX69; BDX69B; BDX68, BDX68A, BDX688 BDX68C. BDX69 transistor handbook BDX68 BDX68A BDX68C BDX69B

    Untitled

    Abstract: No abstract text available
    Text: J BDV65; 65A BDV65B; 65C v _ _ SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio output stages and general am plifier and switching applications. PNP complements are BD V 64, 64B and 64C.


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    PDF BDV65; BDV65B; bb53T31 003Mflm BDV65B:

    Untitled

    Abstract: No abstract text available
    Text: DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 7 6 5 3 4 2 LOC ,19 DIST BD 48 ALL INTERNATIONAL RIGHT5 RESERVED. 1 REVISIONS ZONE LTR DESCRIPTION RELEASED REV PER REV PER REV PER


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    PDF o06568_

    Untitled

    Abstract: No abstract text available
    Text: DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 7 6 5 4 3 2 LOC ,19 DIST BD ALL INTERNATIONAL RIGHT5 RESERVED. 48 REVISIONS ZONE LTR B C DATE DESCRIPTION RELEASED REV PER REV PER


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    PDF AUGi95_ o06568_ 026a/dep 23/ampO6568/edmmod_

    SC 76025

    Abstract: SC - 76025
    Text: 8 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 7 6 5 3 4 2 ,19 LOC BD ALL INTERNATIONAL RIGHTS RESERVED. 1 DIST 48 REVISIONS ZONE LTR RELEASED REV PER REV PER REV PER REV PER


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    PDF G/07/93 17SS-3 SC 76025 SC - 76025

    Untitled

    Abstract: No abstract text available
    Text: 7 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 6 5 3 4 2 LOC ,19 DIST BD 48 ALL INTERNATIONAL RIGHT5 RESERVED. 1 REVISIONS ZONE LTR RELEASED REV PER REV PER REV PER B C -S3.04 + 0.38


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    PDF o06568_ t4Q23/qm

    24-20AWG

    Abstract: ASTM B633 zinc plating B633 HDP-20 MIL-T-10727
    Text: 7 8 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 6 5 3 4 2 ,19 LOC BD ALL INTERNATIONAL RIGHTS RESERVED. 1 DIST 48 REVISIONS ZONE LTR ft D f L \ j\ii ! ' 11 / B C D 53.04+0.38


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    PDF 0G40-120-98 HDP-20 175g-3 0J-MAYZ98_ v026d/^ 24-20AWG ASTM B633 zinc plating B633 MIL-T-10727

    Untitled

    Abstract: No abstract text available
    Text: DRAWING THIS MADE DR AW ING IN IS THIRD ANGLE PROJECTION UNPUBLISHED. COPYRIGHT 19 RELEASED BY A M P FOR P U BLICATIO N INCORPORATED. REVISIO NS BD ALL INTERNATIONAL RIGHTS RESERVED. 48 D ESCRIPTIO N ADDED - 6 , ADOED-7 FERRULE MUS T B E P U R C H A S E D


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    PDF BD5049

    Untitled

    Abstract: No abstract text available
    Text: THIS MADE IN D RA WI NG THIRD 15 ANGL E 19 4 3 PROJECTION UNPUBLI5HED COPYRIGHT 5 6 7 D RA WI NG RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RI GHTS BD RESERVED. RETAINER CLIP, QTY: S TAIN LE S S STEEL D D I ST LOC 19 48 REV I 5 I0N5


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    PDF amp34993 HDP-20 /home/amp34993/edmmod 18-APR-00

    ASTM B633 zinc plating

    Abstract: L076 u317 B633 HDE-20 MIL-T-10727
    Text: DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. ALL 7 6 5 3 4 2 LOC ,19 INTERNATIO NAL RIG H T5 D IS T BD 48 RESERVED. 1 REVISIONS ZONE LTR D E S C R I P T IO N RELEASED REV PER


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    PDF 3/17/aa HDE-20 AUGz95_ /horne/jaJ26g/dept40i37an 06568/e ASTM B633 zinc plating L076 u317 B633 MIL-T-10727

    BD422

    Abstract: SO-08 HDE-20 MIL-T-10727
    Text: 6 7 DRAWING THIS MADE IN DRAWING THIRD 15 ANGLE UNPUBLI5HED COPYRIGHT 19 5 4 3 PROJECTION RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI ST LOC 19 BD RESERVED. REV I 5 I0N5 48 ZONE RETAINER CLIP, QTY STAINLESS STEEL DATE R E L E A S E D PER NPR 250 3


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    PDF BD4220 BD4276 BD5736 0U1D-0123-00 12/11/SO 00IN5TADDATI HDE-20 18-APR-00 amp34993 /home/amp34993/edmmod BD422 SO-08 MIL-T-10727

    BD646F

    Abstract: BD649F BD650F BD643F BD648F BD652F 651F
    Text: BD643F;645F;647F BD649F: 651F_ PHILIPS 711002b 5bE D INTERNATIONAL OOME^b b'iü • PHIN SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements a re B D 6 4 4 F , B D 646F, B D 648F, BD 650F and B D 652F.


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    PDF BD643F BD649F: 65-1F_ 711002b OT186 areBD644F, BD646F, BD648F, BD650F BD652F. BD646F BD649F BD648F BD652F 651F