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    BD 649/BD 650 Search Results

    BD 649/BD 650 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD 649/BD 650 Infineon Technologies TRANS DARLINGTON NPN 45V 8A 3TO-220AB Scan PDF

    BD 649/BD 650 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C6020

    Abstract: No abstract text available
    Text: M0!?5FDECJ0*E2?52C50CO0I0CO0@@EAC:?E M0*:I0*:5650*9:6=5:?8 M086?4J0AAC@G65 M0BC60CE02?50E-0!?AFED M0EB0.:560 2?860!?AFE0%@56=D );0%4.)60 )+0)16503033/-'%6-215 +6=64@> 2E24@> @:?E0@70$@25 (/0*6C:6D *:?8=660F2=60+C:A=60'FEAFE0EA.020A.0 70@?G6CE6CD


    Original     		52C50CO0I0CO0 M0BC60CE02 62EFC6D02 62EFC6D 65F4650 2E650& E2860 44FC24J03 03BA10E C6020 PDF

    Untitled

    Abstract: No abstract text available
    Text: L0,>:F6BC2<0!>@ED03080D-4 L0 ?G6B024D?B0?BB64D650 L0DBB10(62;0(?G6B042@23:<:DI L0D0062B0.2BB2>DI L0$6CC0D92>0B9=062BD90<62;28604EBB6>D *<0&5/*70 *,1*276010440-(&7-326 24D?BI0ED?=2D:?> 1.*8(0*6B:6C +6CD020%62CEB6=6>D CB.0D?0FB.0 *:>8<60'ED@ED0(?G6B0*E@@<:6C


    Original     		BB64D650 L0DBB10 G6B042 L0D0062B0 6CC0D92 28604EBB6 6CD020 62CEB6 46CC0 6CD70 PDF

    Untitled

    Abstract: No abstract text available
    Text: L0$:76D:=60.2BB2>DI L0,$FA02@@B?F65 L0*%!0E0?=@<:2>D039:890<:>604 L0,>:F6BC2<0!>@ED03F070CF-4 L0 :89077:4:6>4I L0 ? *0?=@<:2>D06C:8> '90#2,'40').'/43020F11-*%#4*0/3 24D?BI0ED?=2D:?> .*0*6B:6C +6CD020%62CEB6=6>D ED?=2D650*6BF:46 BF07BFA.0*:>8<60'ED@ED


    Original     		F070C /43020F11-* 6CD020 62CEB6 2D650 BF07BFA 46CC0 6CD60 2D650 6CD60! PDF

    HEL35

    Abstract: KEL35 KL35 MC100EL35
    Text: MC10EL35, MC100EL35 5V ECL JK Flip-Flop The MC10EL/100EL35 is a high speed JK flip-flop. The J/K data enters the master portion of the flip-flop when the clock is LOW and is transferred to the slave, and thus the outputs, upon a positive transition of the clock. The reset pin is asynchronous and is activated with a logic


    Original     		MC10EL35, MC100EL35 MC10EL/100EL35 HEL35 KEL35 AND8020 AN1404 AN1405 AN1406 AN1503 KL35 PDF

    Untitled

    Abstract: No abstract text available
    Text: L0D0D?0F.0?B00D?0C.0">@ED L0 ED@EDC0B.0D?0BC. L0+EB72460&?E>D L0%?G0E8C=0D?0F8F=0 B?7:<6 L0'?>0"C?<2D650(ED@ED )80%3-)50!)+/)05401022.,'%5,104 ,6<64?=E>:42D:?>C 2D24?= ">CDBE=6>D2D:?>00000 0+6B:6C B8C070C8F0)?:>D0?70%?25 ?>F6BD6BC 0+6B:6C062DEB6C02>506>67:DC


    Original     		EB72460& 2D650 B8C070C8F 62DEB6C02 62DEB6C 560B2 807B6AE6 5650C9 65E46C0 B04ECD? PDF

    Untitled

    Abstract: No abstract text available
    Text: L L L L L $?G0?CD BC60CE0?B0E-0'ED@EDC .:560 2>8600!>@ED 2B2<<6<0E>4D:?>0*G:D49 7EAK0D?05BK0'@6B2D:?> '80#2,'40').'/43030E11-*%#4*0/3 !>5ECDB:2<0?>DB?<C 24D?BI0ED?=2D:?> +6CD020%62CEB6=6>D (BCA020CEA0*6B:6C %?D?B0?>DB?<0*ICD6=C (B?46CC0?>DB?<60ED?=?D:F66


    Original     		BC60CE0 /43030E11-* 6CD020 62CEB6 BCA020CEA0 46CC0 6CD60 020CEA PDF

    BO 649

    Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
    Text: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington


    OCR Scan     		0235bQS T-33-29 OP-66) 643/BD 645/BD BD643. 0QQ43 T-33-29 BD647 BO 649 BD 104 darlington bd 645 TOP-66 b 647 c BD 649 BD64S Q62702-D376 BD 104 NPN PDF

    BD 649

    Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
    Text: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


    OCR Scan     		PDF

    BD 650

    Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
    Text: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


    OCR Scan     		PDF

    B0646

    Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
    Text: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington


    OCR Scan     		fl23Sb05 DQ43CI1 T-33-31 OP-66) 644/BD BD648, BD644. BO646. BO648. BD660 B0646 BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660 PDF

    bd 640

    Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
    Text: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington


    OCR Scan     		23SbOS DQ043C T-33-31 OP-66) U4J94 BD644, BD648, BD650 bd 640 TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650 PDF

    bh 27701

    Abstract: 27701A F62Z 27701 BH 27.701 A B-27701A bf 45704 bf 44 704 bh 27 601 B-22601A
    Text: PONTS MONOPHASÉS single phase bridges VR TYPES 0 , 5 A * / tamb=25°< A (V) 100 200 400 600 50 80 150 250 (A) 0,25 220 330 440 (A) 3 1.25 25°C: 125 C (MA) (mA) TYPES 10 100 200 400 600 800 1200 50 80 150 250 380 650 0,1 4 4 4 4 M 14 IN 645 IN 647 IN 649


    OCR Scan     		B-20601A B-22601A B-26701A B-27701A B-44704A B-45704A bh 27701 27701A F62Z 27701 BH 27.701 A B-27701A bf 45704 bf 44 704 bh 27 601 B-22601A PDF

    SDT 9202

    Abstract: bdx 338 BU 450 bdx
    Text: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74


    OCR Scan     		PDF

    philips BDV64A

    Abstract: BDX67
    Text: N AflER P H I L I P S / D I S C R E T E ESE D • bb53T31 DOltjEl? b ■ T - £ 7 -3-? Power Devices LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN PNP PACKAGE OUTLINE fC (D C )(1) V CE0 MINIMUM hpg at f(* ^ (ty p O a t V C E(s»t)


    OCR Scan     		bb53T31 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD679 BD681 philips BDV64A BDX67 PDF

    50t65

    Abstract: bd650 BD644
    Text: BD644; 646; 648 BD650; 652 J SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TO-220 envelope and intended fo r applications such as audio output stages, switching, and general amplifiers.


    OCR Scan     		BD644; BD650; O-220 BD643, BD645, BD647, BD651. BD644 50t65 bd650 BD644 PDF

    Untitled

    Abstract: No abstract text available
    Text: J BDV65; 65A BDV65B; 65C v _ _ SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio output stages and general am plifier and switching applications. PNP complements are BD V 64, 64B and 64C.


    OCR Scan     		BDV65; BDV65B; bb53T31 003Mflm BDV65B: PDF

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


    OCR Scan     		AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 PDF

    MCF5206

    Abstract: No abstract text available
    Text: SECTION 6 BUS OPERATION The MCF5206 bus interface supports synchronous data transfers that can be terminated synchronously or asynchronously and burst or burst-inhibited between the MCF5206 and other devices in the system. This section describes the function of the bus, the signals that


    OCR Scan     		MCF5206 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    BD646F

    Abstract: BD649F BD650F BD643F BD648F BD652F 651F
    Text: BD643F;645F;647F BD649F: 651F_ PHILIPS 711002b 5bE D INTERNATIONAL OOME^b b'iü • PHIN SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements a re B D 6 4 4 F , B D 646F, B D 648F, BD 650F and B D 652F.


    OCR Scan     		BD643F BD649F: 65-1F_ 711002b OT186 areBD644F, BD646F, BD648F, BD650F BD652F. BD646F BD649F BD648F BD652F 651F PDF

    BdP 285

    Abstract: bdp 286 BDP286 BDP285 BUCP-52 BDP396 BDP 284 BP469 BC-148 BDP495
    Text: TRANZYSTORY Wykaz oznaczert parametrów technicznych CCBO C12es C12ss t p fT P h2le XB pojemnoóò kolektor - baza pojemnoóé sprzgzenia zwrotnego w ukladzie wspòlnego «altera /OE/ pojemnosé sprzeienia zwrotnego w ukladzie wspòInego iródta /OS/ oziatotiiwoàé pomiarowa


    OCR Scan     		C12es C12ss BFI67, T0220 BF245 BF240-1, BF440-I 05-QJÂ T0126 BFR30R-3IR BdP 285 bdp 286 BDP286 BDP285 BUCP-52 BDP396 BDP 284 BP469 BC-148 BDP495 PDF

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan     		PDF

    TFK 680 CNY 70

    Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
    Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.


    OCR Scan     		PDF