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    Abstract: D952
    Text: BD950; 952 BD954; 956 J^ PHILIPS INTERNATIONAL SbE D • 711002b 004310Ô 3bb ■ P H I N T-33- n SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. With their n-p-n complements BD949; 9 5 1 ; 9 5 3 and 9 5 5 they are intended fo r use in a w ide range of power amplifiers and fo r switching applications.


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    PDF BD950; BD954; 711002b BD949; BD950i T--33--19 N3BB D952